CPM3-0900-0065B Silicon Carbide Power MOSFET TM C3M MOSFET Technology VDS 900 V ID @ 25˚C 36 A 65 mΩ RDS(on) N-Channel Enhancement Mode Features • • • • • • Chip Outline New C3M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and Simple to Drive Avalanche Ruggedness Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications • • • • Solar Inverters EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Die Size (mm) CPM3-0900-0065B 2.25 x 2.95 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values ID Continuous Drain Current 23 A VGS =15 V, TC = 25˚C VGS =15 V, TC = 100˚C A -55 to +150 ˚C Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Maximum Processing Temperature 325 ˚C 10 min. maximum Pulsed Drain Current TJ , Tstg Operating Junction and Storage Temperature TProc 36 90 ID(pulse) TL Note (1): Assumes a RθJC < 1.0 K/W 1 Value CPM3-0900-0065B Rev. - Pulse width tP limited by Tjmax Note Note 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. Typ. Max. 900 1.8 Unit Test Conditions V VGS = 0 V, ID = 100 μA 2.1 V VDS = 10V, ID = 5 mA 1.6 V VDS = 10V, ID = 5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 65 78 RDS(on) Drain-Source On-State Resistance 90 13.6 gfs Transconductance Ciss Input Capacitance 660 Coss Output Capacitance 60 Crss Reverse Transfer Capacitance 4.0 Eoss Coss Stored Energy 16 EON Turn-On Switching Energy 225 EOFF Turn Off Switching Energy 91 td(on) Turn-On Delay Time 21 Rise Time 36 Turn-Off Delay Time 28 Fall Time 25 tr td(off) tf RG(int) S 11.6 Internal Gate Resistance 4.7 Qgs Gate to Source Charge 7.5 Qgd Gate to Drain Charge 12 Qg Total Gate Charge mΩ pF VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 150ºC VDS= 15 V, IDS= 20 A VDS= 15 V, IDS= 20 A, TJ = 150ºC VGS = 0 V, VDS = 600 V f = 1 MHz μJ VAC = 25 mV Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 2.5Ω, L= 77 μH, TJ = 150ºC Note: 3 ns VDD = 400 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Per IEC60747-8-4 pg 83 Resistive load Note: 3 Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 30.4 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)rse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 10 A 4.4 V VGS = -4 V, ISD = 10 A, TJ = 150 °C Fig. 8, 9, 10 Continuous Diode Forward Current 21 A VGS = -4 V Note 2 Diode pulse Current 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 2 VGS = -4 V, ISD = 20 A, VR = 400 V dif/dt = 600 A/µs Note 2 trr Reverse Recover time 30 ns Qrr Reverse Recovery Charge 134 nC Irrm Peak Reverse Recovery Current 7.5 A Note (2): When using SiC Body Diode the maximum recommended VGS = -4V Note (3): All Switching measurements taken on a TO-247-3 package. Final values may vary depending on final package. 2 Note CPM3-0900-0065B Rev. - Typical Performance 70 Drain-Source Current, IDS (A) 80 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs VGS = 15 V 70 VGS = 13 V 60 Drain-Source Current, IDS (A) 80 VGS = 11 V 50 40 VGS = 9 V 30 20 10 VGS = 15 V VGS = 13 V VGS = 11 V 60 50 VGS = 9 V 40 30 20 VGS = 7 V 10 VGS = 7 V 0 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 80 Conditions: TJ = 150 °C tp < 200 µs 2.0 VGS = 15 V VGS = 11 V 1.6 60 VGS = 9 V 50 40 30 VGS = 7 V 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.0 0.0 2.5 5.0 7.5 10.0 12.5 -50 15.0 -25 0 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 15 V tp < 200 µs TJ = 150 °C 80 TJ = -55 °C 60 75 100 125 150 Conditions: IDS = 20 A tp < 200 µs 120 On Resistance, RDS On (mOhms) 100 50 Figure 4. Normalized On-Resistance vs. Temperature 140 120 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (Ohms) 15.0 0.2 0 TJ = 25 °C 40 20 100 VGS = 11 V 80 VGS = 13 V 60 VGS = 15 V 40 20 0 0 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 12.5 Conditions: IDS = 20 A VGS = 15 V tp < 200 µs 1.8 VGS = 13 V 10.0 Figure 2. Output Characteristics TJ = 25 ºC On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 70 7.5 Drain-Source Voltage, VDS (V) CPM3-0900-0065B Rev. - 50 60 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -10 Conditions: VDS = 20 V tp < 200 µs -8 -6 -4 -2 0 0 40 TJ = 150 °C VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 50 30 TJ = 25 °C 20 TJ = -55 °C 10 VGS = 0 V -20 VGS = -2 V -40 -60 Conditions: TJ = -55°C tp < 200 µs 0 0 2 4 6 8 10 Gate-Source Voltage, VGS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -10 -8 -6 -4 -80 Drain-Source Voltage VDS (V) Figure 8. Body Diode Characteristic at -55 ºC -2 0 -10 -8 -6 -4 -2 0 Drain-Source Current, IDS (A) VGS = -4 V -20 VGS = 0 V VGS = -2 V -40 0 Drain-Source Current, IDS (A) 0 VGS = -4 V -20 VGS = 0 V VGS = -2 V -40 -60 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -60 Conditions: TJ = 150°C tp < 200 µs -80 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC 3.0 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 20 A IGS = 100 mA VDS = 400 V TJ = 25 °C 12 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 16 Conditons VDS = 10 V IDS = 5 mA 2.5 CPM3-0900-0065B Rev. - -80 150 8 4 0 -4 0 5 10 15 20 25 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 30 35 Typical Performance -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 VGS = 0 V VGS = 5 V -20 VGS = 10 V -40 VGS = 15 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V -20 VGS = 10 V -40 VGS = 15 V -60 -60 Conditions: TJ = -55 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -80 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -7 -8 -6 -5 -4 -3 -2 Figure 14. 3rd Quadrant Characteristic at 25 ºC 30 0 -1 -80 Drain-Source Voltage VDS (V) 0 25 -20 VGS = 5 V -40 VGS = 10 V VGS = 15 V Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 0 V 20 15 10 5 -60 Conditions: TJ = 150 °C tp < 200 µs Drain-Source Voltage VDS (V) 0 0 -80 100 600 700 800 900 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Capacitance (pF) Capacitance (pF) 500 10000 Ciss Coss 100 Crss 10 400 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 300 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 200 Ciss 100 Coss 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 CPM3-0900-0065B Rev. - 200 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Mechanical Parameters Parameter Typ 2.25 x 2.95 Unit 1.82 x 0.785 (x 2) mm Die Dimensions (L x W) Exposed Source Pad Metal Dimensions (Each) Gate Pad Dimensions mm 0.8 x 0.5 Chip Thickness mm 180 ± 10% Frontside (Source) metallization (Al) Frontside (Gate) metallization (Al) Backside (Drain) metallization (Ni/Ag) µm 4 µm 4 µm 1.8 µm Chip Dimensions 2.25 mm 0.73 mm 0.8 mm 0.23 mm 0.5 mm Gate Source 1.82 mm 2.95 mm 0.065 mm Source 0.335 mm 0.785 mm 0.08 mm 6 CPM3-0900-0065B Rev. - 0.785 mm 0.3 mm Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power/Tools-and-Support Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 7 CPM3-0900-0065B Rev. - 06-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power