CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. FEATURES Package Type s: 440193 & 44 0206 PN’s: CGH4004 5F & CGH4004 5P APPLICATIONS • Up to 4 GHz Operation • 2-Way Private Radio • 16 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 12 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 55 W Typical PSAT • Test Instrumentation • 55 % Efficiency at PSAT • Class A, AB, Linear amplifiers suitable for • 28 V Operation 15 Rev 4.0 - May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 15 mA 25˚C Maximum Drain Current IDMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz RθJC 2.8 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3,4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40045F at PDISS = 56W. 4 See also, the Power Dissipation De-rating Curve on Page 8. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 400 mA Saturated Drain Current2 IDS 11.6 14.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA DC Characteristics Conditions 1 RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS 12.5 14 – dB VDD = 28 V, IDQ = 400 mA Power Output4 PSAT 40 55 – W VDD = 28 V, IDQ = 400 mA η 45 55 – % VDD = 28 V, IDQ = 400 mA, POUT = PSAT VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 400 mA, POUT = 45 W CW Input Capacitance CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency5 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40045F-AMP 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency = POUT / PDC Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Simulated Small Signal Gain and Input Return Loss of CGH40045 Sparameters the CGH40045F-AMP vs Frequency VDD = 28 V, IDQ = 400 mA Gain, Efficiency, and Output Power vs Frequency measured in Amplifier Circuit CGH40045F-AMP VDD = 28 V, IDQ = 400 mA 80 PSAT (W), Gain (dB), Drain Efficiency (%) 70 60 50 Psat 40 Gain Drain Eff 30 20 10 0 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 Frequency (GHz) Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Gain and Efficiency vs Output Power measured in Amplifier Circuit CGH40045F-AMP VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz 20 60% 18 50% 16 40% 14 30% 12 20% 10 10% 8 Drain Efficiency (%) Gain (dB) Gain Drain Efficiency 0% 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Single Tone CW Output Power vs Input Power of measured in Amplifier Circuit CGH40045F-AMP VDD = 28 V, IDQ = 400 mA 50 2.5GHz 2.4GHz 45 Output Power (dBm) 2.6GHz 40 35 30 25 20 5 10 15 20 25 30 35 40 Input Power (dBm) Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 13 60 12 50 Gain Gain (dB) 11 40 POUT 10 30 9 20 8 10 7 Output Power (dBm) Pulsed Gain and Output Power vs Input Power measured in Amplifier Circuit CGH40045F-AMP VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle 0 5 10 15 20 25 30 35 40 Input Power (dBm) 13 60 12 50 Gain Gain (dB) 11 40 10 30 POUT 9 20 Efficiency 8 10 7 0 0 5 10 15 20 Input Power 25 30 35 Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 Drain Efficiency (%) Output Power (dBm) Single Tone CW Gain, Efficiency, and Output Power vs Input Power measured in Amplifier Circuit CGH40045F-AMP VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz CGH40045 Rev 4.0 40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40045 Rev 4.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40045 VDD = 28 V, IDQ = 400 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40045 VDD = 28 V, IDQ = 400 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Simulated Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 4.1 + j5.27 14.73 + j6.91 750 2.9 + j 4.1 12.3 + j 7.6 1000 2.48 + j0.06 8.13 + j6.85 1100 1.9 + j 3.1 9.2 + j 6.2 1500 2.1 - j 2.5 6.0 + j 4.3 1700 1.05 - j2.48 5.07 + j.2.29 1800 2.1 - j1.9 5.8 + j 4.1 1900 0.89 - j2.62 4.81 + j2.17 2000 0.69 - j3.75 4.93 + j0.16 2100 1.5 - j 4.4 5.1 + j 2.8 3000 1.06 - j8.92 4.04 - j2.98 4000 1.67 - j18.1 4.97 - j8.25 Note 1. VDD = 28V, IDQ = 800mA in the 440193 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40045 Power Dissipation De-rating Curve CGH40045F CW Power Dissipation De-rating Curve 60 Power Dissipation (W) 50 40 30 Note 1 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40045-AMP Demonstration Amplifier Circuit Schematic CGH40045-AMP Demonstration Amplifier Circuit Outline Note: The device slot is machined to different depths to support either pill or flanged versions Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40045-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 0.8pF, ± 0.1 pF, 0603 1 C2 CAP, 2.2pF, ± 0.1 pF, 0603 1 CAP, 10.0pF, +/-5%, 0603, ATC 3 C6,C13, C19 CAP, 470pF ±5 %, 100 V, 0603, X7R 3 C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3 CAP, 10UF, 16V, SMT, TANTALUM 1 C4,C11,C17 C8 C10 CAP, 8.2pF ±5%, ATC100B 1 CAP, 1.0UF ±10%, 100V, 1210, X7R 2 C5,C12,C18,C30,C31 CAP, 82.0pF, ±5%, 0603 5 C16,C22 C15,C21 CAP, 33UF, 20%, G CASE 2 R2 RES, 1/16W, 0603, 100 Ohms 1% 1 R1 RES, 1/16W, 0603, 5.1 Ohms 1% 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 CONN, HEADER, RT>PLZ .1CEN LK 9POS 1 PCB, RO4350B, Er = 3.48, h = 20 mil 1 CGH40045 1 J2,J3 J1 Q1 CGH40045-AMP Demonstration Amplifier Circuit Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40045 (Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.941 -171.75 7.34 80.91 0.012 -3.58 0.650 -173.39 600 MHz 0.941 -174.07 6.12 77.22 0.012 -6.14 0.655 -173.73 700 MHz 0.941 -175.88 5.24 73.81 0.012 -8.41 0.660 -173.93 800 MHz 0.942 -177.39 4.59 70.58 0.012 -10.49 0.665 -174.05 900 MHz 0.942 -178.70 4.07 67.49 0.012 -12.42 0.671 -174.15 1.0 GHz 0.942 -179.88 3.66 64.51 0.011 -14.23 0.677 -174.24 1.1 GHz 0.943 179.05 3.33 61.61 0.011 -15.93 0.683 -174.35 1.2 GHz 0.943 178.03 3.05 58.78 0.011 -17.54 0.689 -174.49 1.3 GHz 0.944 177.07 2.82 56.03 0.011 -19.06 0.695 -174.66 1.4 GHz 0.944 176.13 2.62 53.33 0.011 -20.50 0.701 -174.86 1.5 GHz 0.945 175.21 2.45 50.69 0.011 -21.86 0.707 -175.10 1.6 GHz 0.945 174.30 2.30 48.10 0.011 -23.14 0.713 -175.37 1.7 GHz 0.945 173.40 2.17 45.56 0.011 -24.34 0.718 -175.68 1.8 GHz 0.946 172.49 2.06 43.05 0.010 -25.47 0.724 -176.02 1.9 GHz 0.946 171.58 1.96 40.59 0.010 -26.53 0.729 -176.40 2.0 GHz 0.946 170.65 1.87 38.16 0.010 -27.51 0.734 -176.81 2.1 GHz 0.946 169.70 1.80 35.76 0.010 -28.43 0.739 -177.25 2.2 GHz 0.946 168.73 1.73 33.39 0.010 -29.28 0.743 -177.72 2.3 GHz 0.946 167.73 1.67 31.03 0.010 -30.06 0.747 -178.21 2.4 GHz 0.945 166.70 1.62 28.70 0.010 -30.78 0.751 -178.74 2.5 GHz 0.945 165.63 1.57 26.37 0.010 -31.44 0.754 -179.28 2.6 GHz 0.945 164.53 1.54 24.06 0.010 -32.05 0.757 -179.85 2.7 GHz 0.944 163.38 1.50 21.74 0.009 -32.60 0.759 179.55 2.8 GHz 0.943 162.17 1.47 19.42 0.009 -33.10 0.761 178.93 2.9 GHz 0.942 160.91 1.45 17.09 0.009 -33.56 0.763 178.28 3.0 GHz 0.941 159.57 1.43 14.74 0.009 -33.99 0.764 177.61 3.2 GHz 0.938 156.68 1.41 9.95 0.009 -34.75 0.766 176.20 3.4 GHz 0.935 153.41 1.41 5.00 0.009 -35.46 0.765 174.68 3.6 GHz 0.930 149.66 1.42 -0.20 0.010 -36.21 0.763 173.05 3.8 GHz 0.923 145.28 1.46 -5.76 0.010 -37.13 0.758 171.27 4.0 GHz 0.914 140.09 1.52 -11.80 0.011 -38.39 0.751 169.35 4.2 GHz 0.903 133.82 1.60 -18.50 0.011 -40.21 0.742 167.23 4.4 GHz 0.888 126.08 1.71 -26.07 0.012 -42.86 0.729 164.90 4.6 GHz 0.868 116.32 1.86 -34.83 0.013 -46.72 0.712 162.27 4.8 GHz 0.842 103.74 2.05 -45.14 0.015 -52.24 0.690 159.29 5.0 GHz 0.811 87.25 2.27 -57.50 0.017 -59.93 0.663 155.80 5.2 GHz 0.777 65.61 2.51 -72.38 0.019 -70.34 0.628 151.60 5.4 GHz 0.752 38.13 2.72 -90.03 0.021 -83.73 0.581 146.39 5.6 GHz 0.753 6.31 2.83 -110.07 0.023 -99.76 0.516 139.81 5.8 GHz 0.785 -25.54 2.78 -131.39 0.023 -117.31 0.427 131.59 6.0 GHz 0.835 -53.19 2.58 -152.64 0.022 -135.03 0.311 121.26 To download the s-parameters in s2p format, go to the CGH40045 Product Page and click on the documentation tab. Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40045 (Small Signal, VDS = 28 V, IDQ = 800 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.952 -172.90 7.23 81.83 0.009 -1.13 0.688 -176.19 600 MHz 0.952 -175.11 6.03 78.47 0.009 -3.05 0.691 -176.58 700 MHz 0.952 -176.85 5.18 75.35 0.009 -4.72 0.694 -176.86 800 MHz 0.952 -178.32 4.54 72.38 0.009 -6.21 0.696 -177.07 900 MHz 0.952 -179.59 4.05 69.53 0.009 -7.58 0.699 -177.25 1.0 GHz 0.952 179.25 3.65 66.76 0.009 -8.84 0.702 -177.42 1.1 GHz 0.952 178.19 3.33 64.06 0.009 -10.01 0.706 -177.59 1.2 GHz 0.952 177.18 3.06 61.42 0.009 -11.09 0.709 -177.77 1.3 GHz 0.952 176.22 2.83 58.82 0.009 -12.11 0.712 -177.96 1.4 GHz 0.952 175.28 2.64 56.27 0.009 -13.05 0.716 -178.17 1.5 GHz 0.952 174.37 2.48 53.75 0.009 -13.92 0.719 -178.41 1.6 GHz 0.952 173.46 2.34 51.27 0.009 -14.72 0.722 -178.67 1.7 GHz 0.952 172.55 2.21 48.82 0.009 -15.46 0.725 -178.95 1.8 GHz 0.952 171.64 2.11 46.39 0.009 -16.14 0.728 -179.26 1.9 GHz 0.952 170.72 2.01 43.99 0.009 -16.75 0.731 -179.59 2.0 GHz 0.951 169.78 1.93 41.60 0.009 -17.29 0.734 -179.94 2.1 GHz 0.951 168.83 1.86 39.23 0.009 -17.78 0.737 179.67 2.2 GHz 0.951 167.85 1.80 36.88 0.008 -18.21 0.739 179.27 2.3 GHz 0.950 166.84 1.74 34.53 0.008 -18.58 0.741 178.83 2.4 GHz 0.949 165.80 1.69 32.19 0.008 -18.90 0.743 178.38 2.5 GHz 0.949 164.73 1.65 29.85 0.008 -19.17 0.744 177.90 2.6 GHz 0.948 163.61 1.61 27.51 0.008 -19.40 0.746 177.39 2.7 GHz 0.947 162.44 1.58 25.15 0.008 -19.59 0.747 176.86 2.8 GHz 0.946 161.22 1.56 22.79 0.008 -19.74 0.747 176.31 2.9 GHz 0.945 159.94 1.54 20.40 0.009 -19.87 0.748 175.73 3.0 GHz 0.943 158.58 1.53 17.98 0.009 -19.99 0.747 175.12 3.2 GHz 0.940 155.64 1.51 13.04 0.009 -20.21 0.746 173.83 3.4 GHz 0.935 152.30 1.51 7.90 0.009 -20.51 0.743 172.44 3.6 GHz 0.930 148.47 1.54 2.47 0.010 -21.01 0.738 170.92 3.8 GHz 0.922 143.99 1.58 -3.34 0.010 -21.86 0.730 169.27 4.0 GHz 0.913 138.66 1.65 -9.68 0.011 -23.25 0.721 167.47 4.2 GHz 0.900 132.21 1.75 -16.72 0.012 -25.41 0.708 165.49 4.4 GHz 0.884 124.23 1.87 -24.68 0.013 -28.63 0.691 163.32 4.6 GHz 0.863 114.16 2.04 -33.86 0.015 -33.25 0.671 160.90 4.8 GHz 0.835 101.18 2.24 -44.66 0.017 -39.70 0.646 158.17 5.0 GHz 0.802 84.20 2.47 -57.54 0.020 -48.45 0.616 155.00 5.2 GHz 0.768 62.03 2.72 -72.91 0.022 -59.96 0.577 151.18 5.4 GHz 0.745 34.19 2.91 -90.96 0.025 -74.38 0.527 146.39 5.6 GHz 0.750 2.50 2.99 -111.20 0.026 -91.25 0.459 140.32 5.8 GHz 0.785 -28.66 2.91 -132.50 0.027 -109.41 0.366 132.93 6.0 GHz 0.837 -55.46 2.67 -153.57 0.025 -127.56 0.245 124.60 To download the s-parameters in s2p format, go to the CGH40045 Product Page and click on the documentation tab. Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40045F (Package Type — 440193) Product Dimensions CGH40045P (Package Type — 440206) Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40045F GaN HEMT Each CGH40045P GaN HEMT Each CGH40045F-TB Test board without GaN HEMT Each CGH40045P-TB Test board without GaN HEMT Each CGH40045F-AMP Test board with GaN HEMT installed Each CGH40045P-AMP Test board with GaN HEMT installed Each Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40045 Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGH40045 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf