VDS 1200 V ID @ 25˚C 19 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 160 mΩ N-Channel Enhancement Mode Features Chip Outline • • • • • • • New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Benefits Applications • • • • Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters LED Lighting Power Supplies Part Number Die Size (mm) CPM2-1200-0160B 2.39 × 2.63 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) Pulsed Drain Current TJ , Tstg Operating Junction and Storage Temperature TL TProc 19 12.5 A VGS = 20 V, TC = 25˚C VGS = 20 V, TC = 100˚C 40 A -55 to +150 ˚C Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Maximum Processing Temperature 325 ˚C 10 min. maximum Note (1): Assumes a RθJC < 0.90 K/W 1 Value CPM2-1200-0160B Rev. A Pulse width tP limited by Tjmax Note Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. 1200 V 2.5 V VDS = 10V, IDS = 2.5 mA 1.9 V VDS = 10V, IDS = 2.5 mA, TJ = 150ºC 100 μA VDS = 1200 V, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1 160 Drain-Source On-State Resistance 4.8 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Eoss Coss Stored Energy EAS Avalanche Energy, Single Pluse EON Turn-On Switching Energy 79 EOFF Turn Off Switching Energy 57 td(on) Turn-On Delay Time RG(int) mΩ 290 Ciss tf 196 VGS = 20 V, ID = 10 A VGS = 20 V, ID = 10A, TJ = 150ºC VDS= 20 V, IDS= 10 A S 4.3 VDS= 20 V, IDS= 10 A, TJ = 150ºC 525 VGS = 0 V 47 Note VGS = 0 V, ID = 100 μA 2.4 Transconductance td(off) Test Conditions 1.8 gfs tr Max. Unit pF 4 VDS = 1000 V Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 f = 1 MHz 25 μJ VAC = 25 mV 600 mJ ID = 10A, VDD = 50V μJ VDS = 800 V, VGS = -5/20 V, ID = 10A, RG(ext) = 2.5Ω, L= 256 μH ns VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 Ω, RL = 80 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 9 Rise Time 11 Turn-Off Delay Time 16 Fall Time 10 Internal Gate Resistance 6.5 Qgs Gate to Source Charge 7 Qgd Gate to Drain Charge 14 Qg Total Gate Charge 34 Fig. 16 Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage IS Continuous Diode Forward Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Peak Reverse Recovery Current Typ. Max. Unit 3.3 V 3.1 19 A 23 ns 105 nC 9 A Test Conditions VGS = -5 V, IF=5 A Note VGS = -5V, IF=5 A, TJ = 150 ºC Fig. 8,9, 10 TC = 25˚C Note 2 VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 3200 A/µs Note 2 Note (2): When using SiC Body Diode the maximum recommended VGS = -5V Note (3): For Characteristics inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Thermal Part number C2M0160120D. Symbol 2 Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance From Junction to Ambient CPM2-1200-0160B Rev. A Typ. Max. 0.9 1.0 40 Unit K/W Test Conditions Note Fig. 21 Typical Performance 40 35 Conditions: TJ = 25 °C tp < 200 µs VGS = 20 V 35 VGS = 18 V 30 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 40 Conditions: TJ = -55 °C tp < 200 µs VGS = 16 V 25 VGS = 14 V 20 15 VGS = 12 V 10 VGS = 10 V 5 VGS = 20 V VGS = 18 V 30 VGS = 16 V 25 VGS = 14 V 20 VGS = 12 V 15 VGS = 10 V 10 5 0 0 0.0 2.5 5.0 7.5 10.0 12.5 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 40 VGS = 16 V 25 VGS = 14 V 20 12.5 VGS = 12 V VGS = 10 V 15 Conditions: IDS = 10 A VGS = 20 V tp < 200 µs 2.0 VGS = 18 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) VGS = 20 V 30 10.0 Figure 2. Output Characteristics TJ = 25 ºC 2.5 Conditions: TJ = 150 °C tp < 200 µs 35 7.5 Drain-Source Voltage, VDS (V) 10 1.5 1.0 0.5 5 0 0.0 2.5 5.0 7.5 10.0 0.0 12.5 -50 -25 0 TJ = 150 °C 320 240 TJ = 25 °C 160 TJ = -55 °C 80 0 100 125 150 280 240 VGS = 14 V 200 VGS = 16 V 160 VGS = 18 V VGS = 20 V 120 80 40 0 0 5 10 15 20 25 30 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 10 A tp < 200 µs 320 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 360 Conditions: VGS = 20 V tp < 200 µs 400 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 ºC 480 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) CPM2-1200-0160B Rev. A 35 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 Typical Performance Drain-Source Current, IDS (A) 20 -5 Conditions: VDS = 20 V tp < 200 µs -4 -3 -2 -1 0 Condition: TJ = -55 °C tp < 200 µs VGS = -5 V TJ = 150 °C 0 15 -5 Drain-Source Current, IDS (A) VGS = 0 V TJ = 25 °C 10 TJ = -55 °C 5 -10 VGS = -2 V -15 -20 -25 -30 0 0 2 4 6 8 10 12 14 -35 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A) Figure 7. Transfer Characteristic for Various Junction Temperatures -4 -3 -2 -1 Condition: TJ = 25 °C tp < 200 µs VGS = -5 V VGS = 0 V Drain-Source Current, IDS (A) 0 -5 -4 -3 -2 -1 0 -5 -10 VGS = -2 V -15 -20 -25 0 Condition: TJ = 150 °C tp < 200 µs VGS = 0 V -15 -20 -25 -30 -35 -35 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Body Diode Characteristic at 25 ºC 3.5 3.0 25 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 CPM2-1200-0160B Rev. A Conditions: IDS = 10 A IGS = 100 mA VDS = 800 V TJ = 25 °C 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) Figure 10. Body Diode Characteristic at 150 ºC Conditons VDS = 10 V IDS = 2.5 mA -25 -5 -10 -30 -50 0 VGS = -2 V VGS = -5 V Drain-Source Current, IDS (A) -5 Figure 8. Body Diode Characteristic at -55 ºC 150 15 10 5 0 -5 0 5 10 15 20 25 30 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 35 40 Typical Performance -5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0 0 Conditions: TJ = -55 °C tp < 200 µs 0 Conditions: TJ = 25 °C tp < 200 µs VGS = 0 V Drain-Source Current, IDS (A) -10 VGS = 10 V -15 VGS = 15 V -20 VGS = 20 V -25 -5 VGS = 5 V Drain-Source Current, IDS (A) -5 VGS = 5 V VGS = 0 V -10 VGS = 10 V -15 VGS = 15 V -20 VGS = 20 V -25 -30 -35 Drain-Source Voltage, VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -5 -4 -3 -30 -2 -1 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 30 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V 25 -5 VGS = 10 V -10 VGS = 15 V -15 VGS = 20 V -20 -25 Stored Energy, EOSS (µJ) Conditions: TJ = 150 °C tp < 200 µs -35 Drain-Source Voltage, VDS (V) 20 15 10 5 -30 0 Drain-Source Voltage, VDS (V) 0 -35 Capacitance (pF) Capacitance (pF) 1000 Coss 100 10 800 1000 1200 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 100 Coss 10 Crss Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 400 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 200 CPM2-1200-0160B Rev. A 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Mechanical Parameters Parameter Typical Value Unit 2.39 × 2.63 mm Exposed Source Pad Metal Dimensions (LxW) Each 0.757 × 1.45 mm Gate Pad Dimensions (L x W) 0.80 × 0.505 mm 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm 0.8 / 0.6 µm Die Dimensions (L x W) Die Thickness Bottom Drain metallization (Ni/Ag) Chip Dimensions 2.39 mm Gate Pad 0.80 mm 0.358 mm 6 CPM2-1200-0160B Rev. A 0.757 mm 0.16 mm 2.63 mm 1.45 mm 0.505 mm 0.855 mm 0.265 mm 0.585 mm 0.757 mm Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: www.cree.com/power SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. 7 CPM2-1200-0160B C2M0160120D Rev.Rev. B A Cree, Inc. 4600 Silicon Cree,Drive Inc. Durham, 4600 Silicon NC 27703 Drive USA Tel:Durham, +1.919.313.5300 NC 27703 USAFax: Tel: +1.919.313.5300 +1.919.313.5451 Fax: www.cree.com/power +1.919.313.5451 www.cree.com/power