CPW4-1200-S015B VRRM Silicon Carbide Schottky Diode Chip Z-Rec® Rectifier IF = Q c Features • • • • • • • = 1200 V 15 A = 77.5 nC Chip Outline 1.2kVSchottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Part Number Die Size Anode Cathode CPW4-1200S-015B 2.70 x 2.70 mm2 Al Ni/Ag Maximum Ratings 4-1200-S Datasheet: CPW 015 Rev. A Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Blocking Voltage 1200 V IF Continuous Forward Current 15 A TJ=175˚C 1 IFRM Repetitive Peak Forward Surge Current 68 44 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse 1 IFSM Non-Repetitive Forward Surge Current 100 85 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse 1 IF,Max Non-Repetitive Peak Forward Current 900 750 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse -55 to +175 ˚C 325 ˚C TJ , Tstg TProc Operating Junction and Storage Temperature Maximum Processing Temperature Test Conditions Note 10 min. maximum 1. Assumes RθJC Thermal Resistance of 0.78˚C/W or less Subject to change without notice. www.cree.com/power 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.6 2.3 1.8 3 V IF = 15 A TJ=25°C IF = 15 A TJ=175°C Fig. 1 IR Reverse Current 35 120 200 300 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 77.5 nC VR = 800 V, IF = 15A di/dt = 200 A/μs TJ = 25°C Fig. 3 C Total Capacitance 1200 70 50 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 4 Mechanical Parameters Parameter Typ. Unit Die Size 2.70 x 2.70 mm Anode Pad Size 2.42 x 2.42 mm Anode Pad Opening 2.14 x 2.14 mm Thickness 377 ± 10% μm Wafer Size 100 mm 4 μm 1.8 μm Anode Metalization (Al) Cathode Metalization (Ni/Ag) Frontside Passivation 2 Note CPW4-1200-S015 Rev. A Polyimide Typical Characteristics 2 30 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 25 1.8 1.6 1.4 IR (mA) IF (A) 20 15 10 1.2 1 0.8 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0.6 0.4 5 0.2 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 200 400 600 800 VF (V) 1000 1200 1400 1600 1800 VR (V) Figure 2. Reverse Characteristics Figure 1. Forward Characteristics 1400 90 80 1200 70 1000 50 C (pF) QC (nC) 60 40 30 800 600 400 20 200 10 0 0 0 200 400 600 800 VR (V) Figure 3. Total Capacitance Charge vs. Reverse Voltage 3 CPW4-1200-S015 Rev. A 1000 0.1 1 10 100 VR (V) Figure 4. Capacitance vs. Reverse Voltage 1000 Chip Dimensions B C symbol A D dimension mm inch A 2.7 0.106 B 2.7 0.106 C 2.14 0.084 D 2.14 0.084 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes CPW4 Spice models: http://response.cree.com/Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 4 CPW4-1200-S015 Rev. A, 04-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power