CCS050M12CM2 - Wolfspeed.com

CCS050M12CM2
VDS1.2 kV
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
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25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Package
Ultra Low Loss
Zero Reverse Recovery Current
Zero Turn-off Tail Current
High-Frequency Operation
Positive Temperature Coefficient on VF and VDS(on)
Cu Baseplate, AlN DBC
System Benefits
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RDS(on) (TJ = 25˚C) Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
Applications
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Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Part Number
Package
Marking
CCS050M12CM2
Six-Pack
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Value
Unit
VDS
Drain - Source Voltage
1.2
kV
VGS
Gate - Source Voltage
+25/-10
V
ID
2,Rev. B
S050M12CM
Datasheet: CC
Parameter
87
Continuous Drain Current
59
A
ID(pulse)
Pulsed Drain Current
250
A
TJ
Junction Temperature
150
˚C
-40 to +125
˚C
TC ,TSTG
Case and Storage Temperature Range
Test Conditions
VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
Pulse width tP = 250 μs
Rate limited by Tjmax,TC = 25˚C
Visol
Case Isolation Voltage
2.5
kV
DC, t = 1 min
LStray
Stray Inductance
30
nH
Measured from pins 25-26 to 27-28
M
Mounting Torque
5.0
N-m
G
Weight
180
g
PD
Power Dissipation
312
W
TC = 25 ˚C, TJ ≤ 150 ˚C
Subject to change without notice.
www.cree.com
Notes
Fig. 26
Fig. 28
Fig. 27
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain - Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
Max.
1.2
kV
2.3
V
1.6
2
On State Resistance
Unit
Test Conditions
VGS, = 0 V, ID = 100 µA
VDS = 10 V, ID = 2.5 mA
VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
100
μA
VDS = 1.2 kV, VGS = 0V
0.5
μA
VGS = 20 V, VDS = 0V
25
34
43
63
22
mΩ
VGS = 20 V, IDS = 50 A
VGS = 20 V, IDS = 50 A, TJ = 150 ˚C
VDS = 20 V, IDS = 50 A
Fig.
4-7
gfs
Transconductance
Ciss
Input Capacitance
2.810
Coss
Output Capacitance
0.393
Crss
Reverse Transfer Capacitance
0.014
Eon
Turn-On Switching Energy 1.1
mJ
EOff
Turn-Off Switching Energy 0.6
mJ
Internal Gate Resistance
1.5
Ω
f = 1 MHz, VAC = 25 mV
QGS
Gate-Source Charge
32
QGD
Gate-Drain Charge
30
nC
VDD= 800 V, ID= 50 A
Fig. 15
QG
Total Gate Charge
180
td(on)
Turn-on delay time
21
ns
tr(on)
VSD fall time 90% to 10%
30
ns
td(off)
Turn-off delay time
50
ns
Fig.
20-25
tf(off)
VSD rise time 10% to 90%
19
ns
VDD = 800V, RLOAD = 8 Ω
VGS = +20/-2V, RG = 3.8 Ω
TJ = 25 ˚C
Note: IEC 60747-8-4 Definitions
RG (int)
S
Note
21
nF
VDS = 20 V, ID = 50 A, TJ = 150 ˚C
Fig. 8
VDS = 800 V, VGS = 0 V
f = 1 MHz, VAC = 25 mV
Fig.
16,17
VDD = 600 V, VGS = +20V/-5V
ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C
Note: IEC 60747-8-4 Definitions
Fig. 18
Free-Wheeling SiC Schottky Diode Characteristics
Symbol
Parameter
VSD
Diode Forward Voltage
QC
Total Capacitive Charge
IF
Min.
Continuous Forward Current
Typ.
Max.
1.5
1.7
2.0
2.3
Unit
V
0.28
μC
50
A
Test Conditions
Note
IF = 50 A, VGS = 0
Fig. 9
IF = 50 A, TJ = 150 ˚C
VGS = -5 V, Tc = 90 ˚C
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RthJCM
Thermal Resistance Juction-to-Case for MOSFET
0.37
0.40
RthJCD
Thermal Resistance Juction-to-Case for Diode
0.42
0.43
Unit
˚C/W
Test Conditions
Note
Tc = 90 ˚C, PD = 150 W
Tc = 90 ˚C, PD = 130 W
NTC Characteristics
Symbol
R25
Delta R/R
P25
Condition
TC = 25 °C
Typ.
Max.
5
TC = 100 °C, R100 = 481 Ω
kΩ
±5
TC = 25 °C
Unit
%
mW
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298.15K))]
3380
K
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298.15K))]
3440
K
2
CCS050M12CM2,Rev. B
Typical Performance
200
200
VGS = 20 V
Conditions:
TJ = -40 °C
tp < 50 µs
VGS = 15 V
120
80
VGS = 10 V
40
0
3
6
9
12
120
80
VGS = 10 V
40
VGS = 5 V
VGS = 5 V
0
0
15
0
3
6
Drain-Source Voltage, VDS (V)
12
15
Figure 2. Typical Output Characteristics TJ = 25 ˚C
200
2.0
Conditions:
TJ = 150 °C
tp < 50 µs
Conditions:
IDS = 50 A
VGS = 20 V
tp < 50 µs
1.8
VGS = 20 V
160
1.6
VGS = 15 V
On Resistance, RDS On (p.u.)
Drain Current, IDS (A)
9
Drain-Source Voltage, VDS (V)
Figure 1. Typical Output Characteristics TJ = -40 ˚C
VGS = 10 V
120
80
40
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 5 V
0.0
0
0
3
6
9
12
-50
15
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 3. Typical Output Characteristics TJ = 150 ˚C
Figure 4. Normalized On-Resistance vs. Temperature
60
100
Conditions:
VGS = 20 V
tp < 50 µs
50
Conditions:
IDS = 50 A
tp < 50 µs
90
80
On Resistance, RDS On (mΩ)
TJ = 150 °C
On Resistance, RDS On (mΩ)
VGS = 15 V
160
Drain Current, IDS (A)
160
Drain Current, IDS (A)
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 50 µs
TJ = 125 °C
40
30
TJ = 25 °C
TJ = -40 °C
20
10
70
TJ = -40 °C
60
50
TJ = 150 °C
40
TJ = 25 °C
30
20
10
0
0
0
25
50
75
100
Drain Source Current, IDS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
3
CCS050M12CM2,Rev. B
12
13
14
15
16
17
18
19
Gate Source Voltage, VGS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
20
Typical Performance
100
100
Conditions:
IDS = 50 A
tp < 50 µs
90
Drain-Source Current, IDS (A)
80
On Resistance, RDS On (mΩ)
VGS = 12 V
70
60
50
VGS = 14 V
40
VGS = 16 V
30
VGS = 18 V
20
VGS = 20 V
TJ = 150 °C
Conditions:
tp < 50 µs
80
60
TJ = 25 °C
40
TJ = -40 °C
20
10
0
0
-50
-25
0
25
50
75
100
125
0
150
2
4
Figure 7. On-Resistance vs. Temperature
for Various Gate-Source Voltages
-3
-2.5
-2
-1.5
-1
6
8
10
12
Gate-Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
-0.5
Figure 8. Transfer Characteristic for Various
Junction Temperatures
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = -5 V
Drain-Source Current, IDS (A)
VGS = 0 V
-25
-50
-75
Drain-Source Currnmt, IDS (A)
VGS = -2 V
-25
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
VGS = -2 V
VGS = -5 V
-100
Drain-Source Voltage, VDS (V)
Figure 10. Diode Characteristic at 25 ˚C
Figure 9. Diode Characteristic at -40 ˚C
-2.5
-2
-1.5
-1
VGS = 0 V
-100
Drain-Source Voltage, VDS (V)
-3
Conditions:
TJ = 25 °C
tp < 50 µs
-0.5
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = 0 V
VGS = 10 V
-25
-50
VGS = 0 V
VGS = -5 V
-75
-25
VGS = 20 V
VGS = 15 V
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = -2 V
-100
Drain-Source Voltage, VDS (V)
Figure 11. Diode Characteristic at 150 ˚C
4
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
CCS050M12CM2,Rev. B
-100
Drain-Source Voltage, VDS (V)
Figure 12. 3rd Quadrant Characteristic at -40 ˚C
Typical Performance
-3
-2.5
-2
-1.5
-1
-0.5
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = 0 V
VGS = 0 V
-25
VGS = 10 V
VGS = 15 V
-50
VGS = 20 V
-75
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
-25
VGS = 5 V
VGS = 10 V
-50
VGS = 15 V
-75
Conditions:
TJ = 25 °C
tp < 50 µs
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = 20 V
-100
-100
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 14. 3rd Quadrant Characteristic at 150 ˚C
Figure 13. 3rd Quadrant Characteristic at 25 ˚C
10000
Conditions:
VDS = 800 V
IDS = 50 A
IGS = 10 mA
15
CISS
1000
COSS
Capacitance (pF)
Gate-Source Voltage, VGS (V)
20
10
5
100
CRSS
10
0
Conditions:
f = 1 MHz
VAC = 25 mV
-5
1
0
30
60
90
120
150
180
0
50
Gate Charge (nC)
200
250
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 250 V)
10000
3.0
Conditions:
VDD = 600 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
CISS
2.5
1000
Switching Loss (mJ)
COSS
Capacitance (pF)
150
Drain-Source Voltage, VDS (V)
Figure 15. Typical Gate Charge Characteristics
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
Eon
2.0
Eoff
1.5
1.0
0.5
1
0.0
0
250
500
750
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
5
100
CCS050M12CM2,Rev. B
1000
0
25
50
75
100
Drain to Source Current, IDS (A)
Figure 18. Inductive Switching Energy vs.
Drain Current For VDS = 600V, RG = 20 Ω
125
Typical Performance
4.5
100
Conditions:
VDD = 800 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
Switching Loss (mJ)
3.5
ton
Eon
Time, ton, tr, td(on) (ns)
4.0
3.0
Eoff
2.5
2.0
1.5
td(on)
tr
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
1.0
0.5
10
0.0
0
25
50
75
100
1
125
10
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 800 V, RG = 20 Ω
Figure 20. Turn-on Timing vs. Drain Current
10000
1000
Time, ton, tr, td(on) (ns)
Time, toff, tf, td(off (ns)
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
1000
toff
td(off)
100
tr
ton
10
10
1
1
10
100
10
100
Drain-Source Current, IDS (A)
Gate Resistance, RG (Ohms)
Figure 21. Turn-off Timing vs. Drain Current
Figure 22. Turn-on Timing vs. External Gate Resistor
10000
100
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
ton
toff
td(off)
100
Time, ton, tr, td(on) (ns)
1000
Time, toff, tf, td(off (ns)
td(on)
100
tf
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
tr
tr
td(on)
10
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
1
10
10
100
Gate Resistance, RG (Ohms)
Figure 23. Turn-off Timing vs. External Gate Resistor
6
100
Drain-Source Current, IDS (A)
Drain to Source Current, IDS (A)
CCS050M12CM2,Rev. B
0
20
40
60
80
100
120
140
Junction Temperature, TJ (°C)
Figure 24. Turn-on Timing vs. Junction Temperature
160
Typical Performance
100
Drain-Source Continous Current, IDS (DC) (A)
Time, toff, tf, td(off (ns)
1000
toff
td(off)
100
tf
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
80
70
60
50
40
30
20
10
0
10
0
20
Conditions:
TJ ≤ 150 °C
90
40
60
80
100
120
140
-40
160
-20
0
20
Junction Temperature, TJ (°C)
Figure 25. Turn-on Timing vs. Junction Temperature
Conditions:
TJ ≤ 150 °C
120
140
160
1 µs
10 µs
250
200
150
100
Limited by RDS On
10.00
100 ms
1.00
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.10
-40
-20
0
20
40
60
80
100
120
140
160
0.1
1
Case Temperature, TC (°C)
100
1000
Figure 28. MOSFET Safe Operating Area
1
Diode Junction-Case Thermal Response, Zth JC
(°C/W)
1
D = 90%
D = 70%
D = 50%
D = 30%
D = 10%
D = 5%
0.01
10
Drain-Source Voltage, VDS (V)
Figure 27. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature
0.1
100 µs
1 ms
50
MOSFET Junction-Case Thermal Response, Zth JC
(°C/W)
100
100.00
300
0
D = 2%
D = 1%
D = 0.5%
tp
D = 0.2%
D = tp / T
D = 90%
D = 70%
D = 50%
D = 30%
0.1
D = 10%
D = 5%
0.01
D = 2%
D = 1%
D = 0.5%
D = 0.2%
tp
D = tp / T
Single Pulse
0.001
T
Single Pulse
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
Figure 29. MOSFET Junction to Case Thermal Impedance
CCS050M12CM2,Rev. B
T
0.001
Time (s)
7
80
Figure 26. Continous Drain Current Derating vs Case
Temperature
Drain-Source Current, IDS (A)
Maximum Dissipated Power, Ptot (W)
350
60
40
Case Temperature, TC (°C)
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
Time (s)
Figure 30. Diode Junction to Case Thermal Impedance
Typical Performance
NTC Resistance (Ohms)
100000
10000
1000
100
10
-50
-25
0
25
50
75
100
125
150
NTC Temperature (°C)
Figure 31. NTC Resistance vs NTC tTemperature
Figure 31. Resistive Switching Time Description
Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for
device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid
excessive VDS overshoots.
Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12, CPWR-AN13]
8
CCS050M12CM2,Rev. B
Package Dimensions (mm)
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
9
CCS050M12CM2,Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power