CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120P ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill package. Package Type s: 440206 PN: CGH4012 0P FEATURES APPLICATIONS • Up to 2.5 GHz Operation • 2-Way Private Radio • 20 dB Small Signal Gain at 1.0 GHz • Broadband Amplifiers • 15 dB Small Signal Gain at 2.0 GHz • Cellular Infrastructure • 120 W Typical PSAT • Test Instrumentation • 70 % Efficiency at PSAT • Class A, AB, Linear amplifiers suitable for • 28 V Operation 15 Rev 3.0 - May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz RθJC 1.32 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3,4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40120P at PDISS = 115 W. 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 1.0 A Saturated Drain Current2 IDS 23.2 28.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 28.8 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted) 3 Power Gain GSS – 15.5 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width = 100 usec, Duty Cycle = 10% Power Output POUT – 100 – W VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width = 100 usec, Duty Cycle = 10% η – 60 – % VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width = 100 usec, Duty Cycle = 10% VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 1.0 A, POUT = 100 W CW Input Capacitance CGS – 35.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 9.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40120P-AMP 4 Drain Efficiency = POUT / PDC Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Gain and Input Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40120-AMP VDD = 28 V, IDQ = 1.0 A 25 25 CGH40120F S21 20 15 15 5 10 -5 5 -15 0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Input Return Loss (dB) Gain (dB) CGH40120F S11 -25 1800 Frequency (MHz) Output Power, Drain Efficiency and PAE vs Frequency measured in Broadband Amplifier Circuit CGH40120P-AMP VDD = 28 V, IDQ = 1.0 A 200 100% Output Power Output Power (W) 160 95% Drain Efficiency PAE 90% 140 85% 120 80% 100 75% 80 70% 60 65% 40 60% 20 55% 0 1150 1200 1250 1300 Frequency (MHz) 1350 1400 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40120P Rev 3.0 Efficiency (%) 180 50% 1450 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 60 100% 55 90% 50 80% 45 70% 40 60% 35 50% 30 25 Output Power 40% Associated Gain Drain Efficiency 30% PAE 20 20% 15 10% 10 1150 1200 1250 1300 Frequency (MHz) 1350 1400 0% 1450 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40120P Rev 3.0 Efficiency (%) Output Power (dBm), Associated Gain (dB) Associated Gain, Output Power, Drain Efficiency and PAE vs Frequency measured in Broadband Amplifier Circuit CGH40120P-AMP VDD = 28 V, IDQ = 1.0 A Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum AvailableCGH40120F Gain and K Factor of the CGH40120 VDD = 28 V, IDQ = 1.0 A Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120 VDD = 28 V, IDQ = 1 A Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40120P CW Power Dissipation De-rating Curve CGH40120P Power Dissipation De-Rating Curve 120 Power Dissipation (W) 100 80 Note 1 60 40 20 0 0 25 50 75 100 125 150 Maximum Temperature (°C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 2 + j3.3 5.14 + j0.04 1000 0.81 + j0.18 4.68 - j0.26 1500 0.75 - j1.56 3.44 - j0.77 2000 0.84 - j3 2.34 - j0.95 2500 1.2 - j4.43 2.7 - j2.56 3000 1.09 - j5.9 3.06 - j3.82 Note 1. VDD = 28V, IDQ = 1.0 A in the 440193 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40120P-AMP Demonstration Amplifier Circuit Bill of Materials Designator C1, C30 Description Qty CAP, 27 PF +/- 5%, 250V, 0805, ATC 600F 2 C2 CAP, 1.2 pF, +/- 0.1 pF, 0603, ATC 600S 1 C3, C4 CAP, 3.9 pF, +/- 0.1 pF, 0603, ATC 600S 2 CAP, 4.7 pF, +/- 0.1 pF, 0603, ATC 600S 2 C11, C31 C5, C6 CAP, 27pF,+/-5%, 0603, ATC 600S 2 C12, C32 CAP, 100 pF, +/- 5%, 0603, ATC 600S 2 C13, C33 CAP, 470 pF +/- 5%,100 V, 0603, Murata 2 C14, C34 CAP, CER, 33000 pF, 100V, X7R, 0805, Murata 2 C15 CAP, 10 uF, 16V, SMT, TANTALUM 1 C35 CAP, CER, 1.0 uF, 100V, +/- 10%, X7R, 1210 1 C36 CAP, 33 uF, 100V, ELECT, FK, SMD 1 C20, C21 CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F 2 C22, C23 CAP, 0.5 PF +/- 0.05 pF, 0805, ATC 600F 2 C24, C25 CAP, 1.2 PF +/- 0.1 pF, 0805, ATC 600F 2 R1 RES, 1/16W, 0603, 511 Ohms (≤5% tolerance) 1 R2 RES, 1/16W, 0603, 5.1 Ohms (≤5% tolerance) 1 L1 IND, 6.8 nH, 0603, L-14C6N8ST 1 L2 IND, FERRITE, 220 OHM, 0805, BLM21PG221SN1 1 CONN, N-Type, Female, 0.500 SMA Flange 2 J1, J2 J3 Q1 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 PCB, RO4003, Er = 3.38, h = 32 mil 1 CGH40120P 1 CGH40120P-AMP Demonstration Amplifier Circuit Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40120P-AMP Demonstration Amplifier Circuit Schematic CGH40120P-AMP Demonstration Amplifier Circuit Outline Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40120P (Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.961 -177.60 4.19 80.16 0.006 13.42 0.807 -179.57 600 MHz 0.961 -178.85 3.49 77.38 0.006 15.30 0.808 -179.85 700 MHz 0.961 -179.89 2.99 74.72 0.006 17.30 0.810 179.89 800 MHz 0.961 179.22 2.61 72.16 0.007 19.36 0.811 179.66 900 MHz 0.961 178.41 2.32 69.66 0.007 21.47 0.813 179.42 1.0 GHz 0.960 177.67 2.09 67.22 0.007 23.59 0.815 179.18 1.1 GHz 0.960 176.96 1.89 64.83 0.007 25.71 0.817 178.94 1.2 GHz 0.960 176.28 1.73 62.49 0.007 27.81 0.819 178.68 1.3 GHz 0.960 175.63 1.60 60.18 0.007 29.86 0.822 178.41 1.4 GHz 0.960 174.99 1.48 57.92 0.008 31.86 0.824 178.13 1.5 GHz 0.960 174.36 1.38 55.69 0.008 33.80 0.826 177.83 1.6 GHz 0.960 173.73 1.30 53.50 0.008 35.65 0.828 177.52 1.7 GHz 0.960 173.11 1.22 51.35 0.008 37.40 0.830 177.19 1.8 GHz 0.959 172.49 1.15 49.23 0.009 39.06 0.832 176.84 1.9 GHz 0.959 171.86 1.10 47.15 0.009 40.61 0.835 176.47 2.0 GHz 0.959 171.23 1.04 45.09 0.010 42.04 0.837 176.09 2.1 GHz 0.958 170.59 0.99 43.07 0.010 43.36 0.839 175.69 2.2 GHz 0.958 169.95 0.95 41.08 0.011 44.56 0.840 175.28 2.3 GHz 0.957 169.29 0.91 39.12 0.011 45.64 0.842 174.85 2.4 GHz 0.957 168.63 0.88 37.18 0.012 46.60 0.844 174.40 2.5 GHz 0.956 167.95 0.85 35.28 0.012 47.45 0.845 173.93 2.6 GHz 0.956 167.26 0.82 33.39 0.013 48.18 0.847 173.45 2.7 GHz 0.955 166.56 0.79 31.53 0.014 48.80 0.848 172.94 2.8 GHz 0.954 165.84 0.77 29.68 0.014 49.32 0.849 172.43 2.9 GHz 0.953 165.10 0.75 27.86 0.015 49.74 0.850 171.89 3.0 GHz 0.952 164.34 0.73 26.04 0.016 50.05 0.851 171.33 3.2 GHz 0.950 162.75 0.70 22.46 0.018 50.40 0.852 170.17 3.4 GHz 0.948 161.07 0.68 18.91 0.020 50.38 0.852 168.93 3.6 GHz 0.944 159.27 0.66 15.37 0.023 50.02 0.852 167.61 3.8 GHz 0.941 157.33 0.65 11.82 0.025 49.32 0.850 166.19 4.0 GHz 0.936 155.23 0.64 8.23 0.029 48.30 0.848 164.68 4.2 GHz 0.931 152.94 0.64 4.57 0.033 46.94 0.844 163.06 4.4 GHz 0.925 150.43 0.64 0.80 0.037 45.24 0.840 161.32 4.6 GHz 0.917 147.66 0.65 -3.12 0.042 43.18 0.834 159.44 4.8 GHz 0.908 144.59 0.66 -7.23 0.048 40.72 0.826 157.41 5.0 GHz 0.896 141.14 0.68 -11.60 0.055 37.83 0.817 155.20 5.2 GHz 0.883 137.25 0.71 -16.29 0.064 34.45 0.805 152.81 5.4 GHz 0.866 132.84 0.74 -21.37 0.074 30.53 0.791 150.19 5.6 GHz 0.845 127.78 0.78 -26.94 0.086 25.97 0.774 147.33 5.8 GHz 0.820 121.95 0.83 -33.09 0.101 20.69 0.755 144.21 6.0 GHz 0.789 115.17 0.88 -39.95 0.118 14.58 0.731 140.79 To download the s-parameters in s2p format, go to the CGH40120P Product Page and click on the documentation tab. Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40120P (Package Type — 440206) Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40120P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH40120P-TB CGH40120P-AMP Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40120P Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40120P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf