CPW2-1200S050–Silicon Carbide Schottky Diode Chip Zero Recovery® Rectifier VRRM = 1200 V IF(AVG)= 50 A Features • • • • • • • Qc = 305 nC Chip Outline 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Part Number Anode Cathode Package Marking CPW2-1200S050B Al NiV/Ag Sawn on Foil Wafer # on Foil Maximum Ratings Rev. B W2-1200S050 Datasheet: CP Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1200 V VDC DC Blocking Voltage 1200 V 50 A TJ=175˚C IF(AVG) Average Forward Current Note IFRM Repetitive Peak Forward Surge Current TBD A TC=25˚C, tP=8.3 ms, Half Sine Wave 1 IFSM Non-Repetitive Peak Forward Surge Current TBD A TC=25˚C, tP=10 µs, Pulse 1 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C Subject to change without notice. www.cree.com 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.65 2.6 2.0 3.0 V IF = 50 A TJ=25°C IF = 50 A TJ=175°C IR Reverse Current 10 50 200 1000 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 305 nC VR = 500 V, IF = 50 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 4500 396 325 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. Assumes θJ-C Thermal Resistance of 0.5˚C/W or less. Mechanical Parameters Parameter Typ. Unit Die Size 4.02 x 8.23 mm Anode Pad Size 3.58 x 7.77 mm Anode Pad Opening 3.22 x 7.41 mm Thickness 387 ± 10% μm Wafer Size 100 mm 4 μm 1.8 μm Anode Metalization (Al) Cathode Metalization (Ni/Ag) Frontside Passivation 2 CPW2-1200S050 Rev. B Nitride Note Chip Dimensions A Symbol D B Dimension mm inch A 8.23 0.324 B 4.02 0.158 C 7.41 0.292 D 3.22 0.127 C Part Number Anode Cathode Package Marking CPW2-1200S050B Al NiV/Ag Sawn on Foil Wafer # on Foil The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These die should be stored in a temperature-controlled, nitrogen dry box soon after receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2 - 3 weeks of delivery to assure 100% release of all die without issues. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 3 CPW2-1200S050 Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power