CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440201 PN: CGH3524 0F Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 250 240 225 225 220 W Gain 12.1 11.9 11.6 11.5 11.4 dB 60 59 57 52 48 % Power Added Efficiency Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. 15 Rev 2.0 – May 20 Features • 3.1 - 3.5 GHz Operation • 240 W Typical Output Power • 11.6 dB Power Gain at PIN = 42.0 dBm • 57 % Typical Power Added Efficiency • 50 Ohm Internally Matched • <0.2 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Pulse Width PW 1 ms Conditions Duty Cycle DC 50 % Drain-Source Voltage VDSS 120 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Power Dissipation PDISS 345 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 60 mA 25˚C Maximum Drain Current IDMAX 24 A 25˚C Soldering Temperature TS 245 ˚C Screw Torque τ 40 in-oz RθJC 0.5 ˚C/W TC -40, +150 ˚C 1 2 Pulsed Thermal Resistance, Junction to Case3 Case Operating Temperature 3 85˚C Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%. 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC Gate Quiescent Voltage VGS(Q) – -2.7 – VDC Saturated Drain Current2 IDS 46.4 56.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 57.6 mA DC Characteristics1 VDS = 10 V, ID = 57.6 mA VDS = 28 V, ID = 1.0 A RF Characteristics (TC = 25˚C, F0 = 3.1-3.5 GHz unless otherwise noted) 3 Output Power1 at 3.1 GHz POUT 210 250 – W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Output Power2 at 3.3 GHz POUT 200 225 – W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Output Power3 at 3.5 GHz POUT 180 220 – W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency1 at 3.1 GHz PAE 48 60 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency2 at 3.3 GHz PAE 48 57 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency3 at 3.5 GHz PAE 40 48 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Gain1 at 3.1 GHz GP 11.0 12.0 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Gain2 at 3.3 GHz GP 10.8 11.5 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Gain3 at 3.5 GHz GP 10.5 11.5 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Small Signal Gain S21 11.4 14 – dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Input Return Loss S11 – -9 -4.5 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Output Return Loss S22 – -10 -6.0 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm D – 0.1 – dB VDD = 28 V, IDQ = 1.0 A Pulsed Amplitude Droop Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH35240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Gain and Return Losses vs Frequency Measured in CGH35240-AMP Amplifier Circuit. VDS = Sparameter 28 V, IDS = 1 A Typical 20 Gain (dB) 15 10 Magnitude (dB) 5 ORL (dB) 0 -5 IRL (dB) -10 -15 -20 S21 S11 -25 -30 2000 S22 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 Frequency (MHz) 260 16 250 15 240 14 230 13 220 12 210 11 200 10 190 9 180 Pout (W) 8 Power Gain (dB) 170 160 3000 Gain (dB) Output Power (W) Typical Pulsed Output Power and Power Gain vs Frequency Measured in CGH35240-AMP Amplifier Circuit. VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% 7 3100 3200 3300 3400 3500 6 3600 Frequency (MHz) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance CGH35240 Output Power vs Input Power VDS = 28 V, IDS = 1 A, Pulse Pout Width 300 μS, Duty Cycle = 20 % vs=Pin 60 3.1 GHz 55 3.2 GHz 3.3 GHz 50 3.4 GHz Output Power (dBm) 3.5 GHz 45 40 35 30 25 20 15 20 25 30 35 40 45 Input Power (dBm) CGH35240 PAE & Gain vs Input Power VDS = 28 V, IDS = 1 A, Pulse Width = 300 μS, Duty Cycle = 20 % PAE vs Pin PAE - 3.1 GHz PAE - 3.2 GHz PAE - 3.3 GHz PAE - 3.4 GHz PAE - 3.5 GHz Gain - 3.1 GHz Gain - 3.2 GHz Gain - 3.3 GHz Gain - 3.4 GHz Gain - 3.5 GHz 18 60 16 50 14 40 12 30 10 20 8 10 6 0 Gain (dB) PAE (%) 70 4 15 20 25 30 35 40 45 50 Input Power (dBm) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Typical Pulsed Output Power and Power Added Efficiency vs Frequency Measured in CGH35240-AMP Amplifier Circuit. VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% 100 55.0 Pout (dBm) 90 PAE (%) 54.0 80 53.5 70 53.0 60 52.5 50 52.0 40 51.5 3000 3100 3200 3300 3400 3500 PAE (%) Output Power (dBm) 54.5 30 3600 Frequency (MHz) Typical Pulse Droop Performance CGH35240F Pulsed Power Performance 54.0 53.9 300 us 5 % 300 us 10 % 300 us 20 % 300 us 25 % 1 ms 5 % 1 ms 10 % 1 ms 20 % 1 ms 25 % 5 ms 5 % 5 ms 10 % 5 ms 20 % 5 ms 25 % 53.8 Output Power (dBm) 53.7 53.6 53.5 53.4 53.3 53.2 Pulse Width Duty Cycle (%) Droop (dB) 10 us 5-25 0.05 50 us 5-25 0.05 100 us 5-25 0.10 300 us 5-25 0.15 1 ms 5-25 0.30 5 ms 5-25 0.60 53.1 53.0 -1 0 1 2 3 4 5 6 Time (ms) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35240F Transient Thermal Curve 1.0 0.9 Theta JC (oC/W) 0.8 0.7 0.6 0.5 10 % Duty Cycle - Pdiss = 230 W 0.4 20 % Duty Cycle - Pdiss = 230 W 50 % Duty Cycle - Pdiss = 230 W 0.3 10 % Duty Cycle - Pdiss = 345 W 0.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (seconds) Pulsed De-rating Power Dissipation De-rating Curve CGH35240 Transient PowerCGH3x240F Dissipation Curve 400 Power Dissipation (W) 350 300 100 us, 10 % 300 us, 20 % 1 ms, 20% 250 1 ms, 50 % 200 150 Note 1 100 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35240F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 511 OHM, +/- 1%, 1/16W,0603 1 R2 RES, 5.1,OHM, +/- 1%, 1/16W,0603 1 CAP, 10.0pF, +/-5%,250V, 0603, 2 C1,C3 C2 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 1 C4,C11 CAP, 470PF, +/-5%, 100V, 0603, X 2 CAP, 33 UF, 20%, G CASE 1 CAP,33000PF, 0805,100V, X7R 2 C15 C5,C12 C13 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C6 CAP 10UF 16V TANTALUM 1 CAP, 10pF, +/- 1%, 250V, 0805 2 C9,C10 C16 J1,J2 J3 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 L1 FERRITE, 22 OHM, 0805, BLM21PG220SN1 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGH35240F 1 Q1 CGH35240F-AMP Demonstration Amplifier Circuit Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35240F-AMP Demonstration Amplifier Circuit Outline CGH35240F-AMP Demonstration Amplifier Circuit Schematic (CGH35240F) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH35240F (Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.909 -110.39 0.67 85.30 600 MHz 0.887 -133.63 0.68 52.25 0.001 7.79 0.931 -175.71 0.001 -22.14 0.926 700 MHz 0.861 -157.29 0.67 21.72 161.61 0.002 -50.42 0.925 140.70 800 MHz 0.831 178.80 0.65 -6.95 0.002 -74.38 0.924 120.94 900 MHz 0.800 154.60 0.64 -34.16 0.002 -110.45 0.924 101.95 1.0 GHz 0.770 130.18 0.63 -60.27 0.002 -135.64 0.924 83.44 1.2 GHz 0.723 80.74 0.64 -110.13 0.002 166.59 0.919 46.75 1.4 GHz 0.698 29.48 0.69 -160.34 0.002 127.53 0.896 9.09 1.6 GHz 0.618 -28.54 0.76 137.30 0.004 116.81 0.766 -28.92 1.8 GHz 0.443 -48.39 0.45 107.33 0.003 53.00 0.861 -47.01 2.0 GHz 0.569 -89.52 0.69 73.39 0.003 -0.59 0.915 -88.98 2.1 GHz 0.594 -111.61 0.83 51.20 0.004 -23.48 0.913 -108.69 2.2 GHz 0.606 -133.58 1.01 28.33 0.005 -45.69 0.908 -128.26 2.3 GHz 0.607 -155.92 1.25 4.25 0.007 -71.50 0.902 -148.11 2.4 GHz 0.595 -179.54 1.59 -21.28 0.009 -99.04 0.895 -168.80 2.5 GHz 0.561 154.35 2.11 -49.48 0.013 -129.12 0.883 169.09 2.6 GHz 0.499 124.82 2.87 -80.80 0.018 -161.39 0.861 144.62 2.7 GHz 0.376 85.52 4.03 -118.36 0.027 161.11 0.813 115.40 2.8 GHz 0.177 20.59 5.38 -164.13 0.039 115.01 0.690 79.55 2.9 GHz 0.165 -127.79 6.17 144.62 0.049 64.36 0.480 37.79 3.0 GHz 0.309 163.81 6.11 96.28 0.052 15.24 0.288 -7.26 3.1 GHz 0.354 118.49 5.80 52.70 0.052 -28.98 0.208 -64.36 3.2 GHz 0.329 74.79 5.47 11.41 0.052 -70.29 0.236 -120.98 3.3 GHz 0.286 23.15 5.19 -29.09 0.052 -110.99 0.302 -160.98 3.4 GHz 0.300 -38.01 4.94 -70.05 0.052 -151.88 0.354 167.78 3.5 GHz 0.406 -96.34 4.55 -112.29 0.050 165.57 0.350 142.39 3.6 GHz 0.565 -143.08 4.00 -154.80 0.046 122.85 0.300 127.36 3.7 GHz 0.708 177.87 3.32 163.85 0.040 81.34 0.271 127.66 3.8 GHz 0.799 143.73 2.64 125.19 0.033 42.95 0.321 129.68 3.9 GHz 0.847 113.69 2.09 89.39 0.027 7.05 0.410 122.23 4.0 GHz 0.868 85.65 1.65 56.14 0.022 -25.45 0.497 108.92 4.2 GHz 0.853 30.51 1.10 -6.76 0.016 -84.72 0.622 78.62 4.4 GHz 0.803 -32.21 0.75 -69.35 0.012 -148.46 0.700 47.77 4.6 GHz 0.765 -101.68 0.51 -131.73 0.008 147.89 0.743 16.36 4.8 GHz 0.770 -166.93 0.32 167.88 0.005 101.70 0.762 -17.52 5.0 GHz 0.785 141.18 0.20 113.11 0.004 59.25 0.747 -56.70 5.2 GHz 0.786 100.39 0.13 60.03 0.005 5.11 0.676 -106.08 5.4 GHz 0.761 65.91 0.08 -1.66 0.007 -83.46 0.447 -179.99 5.6 GHz 0.691 35.57 0.03 -48.77 0.005 159.03 0.055 5.8 GHz 0.608 11.51 0.02 -59.15 0.004 57.07 0.310 23.86 6.0 GHz 0.604 -18.74 0.01 -102.12 0.003 -9.32 0.594 -75.04 2 122.03 To download the s-parameters in s2p format, go to the CGH35240F Product Page and click on the documentation tab. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH35240F (Package Type — 440201) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH35240F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH35240F-TB CGH35240F-AMP Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH35240F Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH35240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf