CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device Package Type : 3x4 DFN PN: CGHV270 15S of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flatprovide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S no-lead (DFN) package. Typical Performance 2.4-2.7 GHz (TC = 25˚C) , 50 V Parameter 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units 23 22 21.7 21.2 dB Adjacent Channel Power @ POUT = 2.5 W -36.7 -40.7 -42.4 -42.5 dBc Drain Efficiency @ POUT = 2.5 W 35.9 33.5 30.4 30.2 % -9.312 -9.6 -8.6 -7.8 dB Small Signal Gain Input Return Loss Note: Measured in the CGHV27015S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. 15 Rev 2.0 – May 20 Features for 50 V in CGHV27015S-AMP1 • • • • • • 2.4 - 2.7 GHz Operation 15 W Typical Output Power 21 dB Gain at 2.5 W PAVE -38 dBc ACLR at 2.5 W PAVE 32% efficiency at 2.5 W PAVE High degree of APD and DPD correction can be applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 2 mA 25˚C Maximum Drain Current1 IDMAX 0.9 A 25˚C ˚C Soldering Temperature TS 245 Case Operating Temperature3 TC -40, +150 ˚C RθJC 11.1 ˚C/W 2 Thermal Resistance, Junction to Case4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power Dissipation De-rating Curve on page 7. 4 Measured for the CGHV27015S at PDISS = 5 W The RTH for Cree’s demonstration amplifier, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total RTH from the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W. 5 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 2 mA Gate Quiescent Voltage VGS(Q) – -2.6 – VDC VDS = 50 V, ID = 60 mA Saturated Drain Current IDS 1.48 1.78 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 150 – – VDC VGS = -8 V, ID = 2 mA DC Characteristics1 Drain-Source Breakdown Voltage RF Characteristics2,3 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) Gain G – 21.2 - dB VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm ACLR – -42.5 – dBc VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm η – 30.2 - % VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm Input Capacitance5 CGS – 3.15 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 1.06 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.058 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz WCDMA Linerarity4 Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.7 GHz 4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF 5 Includes package and internal matching components Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27015S-AMP1 Figure 1. - Small Signal Gain and Return Losses vs Frequency VDD = 50 V, IDQ = 60 mA 30 25 Gain (dB) Input and Output Return Loss 20 15 10 5 0 -5 -10 -15 S11 S21 -20 -25 S22 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 Frequency (GHz) Figure 2. - Typical Drain Efficiency and ACLR vs. Output Power VDD = 50 V, IDQ = 60 mA, 1 Carrier WCDMA, PAR = 7.5 dB 0 45 ACLR_2p5 -10 35 ACLR_2P6 Efficiency ACLR_2p7 -15 ACLR (dBc) 40 ACLR_2p4 30 EFF_2p4 EFF_2p5 -20 25 EFF_2P6 EFF_2p7 -25 20 -30 15 -35 10 ACLR -40 -45 5 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power (dBm) 31 32 33 34 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 Efficiency (%) -5 CGHV27015S Rev 2.0 35 36 37 38 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27015S-AMP1 Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency VDD = 50 V , IDQ = 60 mA, PAVE = 2.5 W, 1 Carrier WCDMA, PAR = 7.5 dB 40 -25.0 -27.5 Drain Efficiency Drain Efficiency 30 -30.0 25 -32.5 Gain 20 -35.0 Gain 15 ACLR (dBc) Gain (dB) & Drain Efficiency (%) 35 -37.5 10 -40.0 GAIN 5 -42.5 EFF ACLR ACLR 0 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) ACLR 2.60 2.65 2.70 -45.0 2.75 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Moisture Sensitivity Level Symbol Level Test Methodology MSL 3 (168 hours) IPC/JEDEC J-STD-20 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Maximum Gain & K-Factor GMAX andAvaliable K-Factor vs Frequency CGHV27015S VDD = 50 V, IDQ = 60 mA, Tcase = 25°C Vdd = 50 V, Idq = 60 mA, Tcase = 25°C 40 1.25 Gmax K-Factor 1 30 0.75 25 K-Factor GMAX (dB) 35 0.5 20 0.25 15 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27015S-AMP1 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2400 7.9 + j2.14 15.8 + j43.1 2500 8 + j2.9 18.3 + j43.7 2600 7.9 + j3.6 19.7 + j43.4 2700 7.7 - j4.4 19.7 + j43.4 Note1: VDD = 50 V, IDQ = 60 mA in the DFN package. Note2: Impedances are extracted from the CGHV27015S-AMP1 application circuit and are not source and load pull data derived from the transistor. CGHV27015S-AMP1 Application Circuit Bill of Materials Designator Description Qty R1 RES, 332,OHM, +/- 1%, Vishay 1 R2 RES, 22.6,OHM, +/- 1%, 1/16W, 0603 1 R3, R4 RES, 2.2,OHM, +/- 1%, 1/16W, 0603 1 C1, C4 CAP, 27pF, +/- 5%, 0603, ATC 2 C2 CAP, 2.0pF,+/-0.1pF, 0603 ATC 1 C3 CAP, 0.1pF,+/-0.05 pF, 0603, ATC 2 C8 CAP, 6.2pF, +/-0.1pF, 0603, ATC 1 C13 CAP, 10pF +/-5%, 0603, ATC 1 C6, C11 CAP, 33000pF, 0805, ATC 2 C7, C12 CAP, 470PF, 5%, 100V, 0603, 2 C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C5 CAP 10UF 16V TANTALUM 1 C9 CAP, 33UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGHV27015S, DFN 1 J1, J2 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27015S-AMP1 Application Circuit, 50 V CGHV27015S-AMP1 Application Circuit Schematic, 50 V Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27015S-AMP1 Application Circuit, 50 V CGHV27015S-AMP1 Power Dissipation De-rating Curve 7 6 Power Dissipation (W) 5 Note 1 4 3 2 1 0 0 25 50 75 100 125 150 175 Maximum Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2) 200 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV27015S Rev 2.0 225 250 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV27015S (Package 3 x 4 DFN) Pin Input/Output 1 GND 2 NC 3 RF IN 4 RF IN 5 NC 6 GND 7 GND 8 NC 9 RF OUT 10 RF OUT 11 NC 12 GND Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV27015S Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 2.7 GHz 15 W Surface Mount - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV27015S GaN HEMT Each Test board with GaN HEMT installed Each CGHV27015S-AMP1 CGHV27015S-TR Delivered in Tape and Reel 250 parts / reel Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV27015S Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV27015S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf