C3D04065A VRRM Silicon Carbide Schottky Diode IF (TC=135˚C) Z-Rec Rectifier ® 650 V = 6 A Qc = 10 nC Features • • • • • • • • = Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • Switch Mode Power Supplies Power Factor Correction Part Number Package Marking C3D04065A TO-220-2 C3D04065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 13.5 6 4 A TC=25˚C TC=135˚C TC=155˚C 17 12 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IF Note Fig. 3 IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 30.5 20 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 220 160 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 52 22.5 W TC=25˚C TC=110˚C Fig. 4 Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in TJ , Tstg TO-220 Mounting Torque 1 Value C3D04065A Rev. B M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.4 1.7 1.7 2.4 V IF = 4 A TJ=25°C IF = 4 A TJ=175°C Fig. 1 IR Reverse Current 6 12 30 120 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 10 nC VR = 400 V, IF = 4 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 231 18.5 15 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 1.4 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 2.9 °C/W Fig. 9 Typical Performance 200 12 10 180 TJ = -55 °C TJ = 75 °C TJ = 125 °C TJ = 175 °C 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 160 140 TJ = 175 °C 120 TJ = 125 °C 100 TJ = 75 °C R 6 Reverse LeakageICurrent, (mA) IRR (uA) 8 F Foward I Current, (A) IF (A) TJ = 25 °C C3D04065A Rev. B 3.5 4.0 80 TJ = 25 °C 60 TJ = -55 °C 40 20 0 0 200 400 600 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics 800 1000 Typical Performance 50 60 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 45 40 30 40 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 35 50 25 20 30 20 15 10 10 5 0 25 50 75 100 125 150 0 175 25 50 75 T ˚C TCC(°C) 175 Figure 4. Power Derating 250 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 200 12 10 Capacitance C (pF) (pF) CapacitiveQCharge, (nC) QC (nC) C 150 C Conditions: TJ = 25 °C 14 125 ˚C TTC (°C) Figure 3. Current Derating 16 100 8 6 4 150 100 50 2 0 0 100 200 300 400 500 600 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D04065A Rev. B 700 0 0 1 10 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 100 1000 Typical Performance 1,000 4 3 TJ = 25 °C TJ = 110 °C IIFSM (A) (A) 2.5 FSM 2 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 3.5 1.5 100 1 0.5 0 0 100 200 300 400 500 600 10 10E-6 700 ReverseVVoltage, (V) VR (V) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 1E-3 tp (s) Time, tp (s) R 1 100E-6 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D04065A Rev. B 100E-3 1 10E-3 Package Dimensions Inches POS Package TO-220-2 A B A F J C P CP OS Q D A E B B D X S E Y 1 2 G T Z U H V L M W N PIN 1 CASE PIN 2 F C G D H E F J G L H Max Min Max .381 .410 9.677 10.414 .235 Inc hes .100 M in M ax .395.223 .410 .255 5.969 M illim eters .120 2.540 M in M ax .337 5.664 10.033 10.414 6.477 .235.590 .255 .615 5.969 14.986 6.477 15.621 .102.143 .337 1.105 .590 .500 .149 2.591 .153 8.560 1.147 2.845 3.632 3.886 8.560 28.067 29.134 15.494 12.700 13.970 3.886 29.134 R 0.197 .028 .195 .045 .165 .195 .170.048 S Q T S T U U V V WW z Z .112 .337 .610 14.986 .550 .153 3.785 R1.147 0.197 28.626 1.127 .635 .530.025 .550 .036 13.462 13.970 R 0.010 .045 .055 R 0.2541.143 M J L N M P N Q P X X Y Y Millimeters Min 8.560 .914 1.397 .914 4.953 1.397 4.191 5.207 1.219 4.572 5.207 .180 .711 .205 1.143 .185 4.953 .054 4.318 .0483° .054 6° 1.219 3° 1.371 6° 3° 3° 5° 5° 5°3° 5° 3° 5° 2.388 2.794 .356 .533 6° 3° 6° 3° 3° 6° 3° .110 2.54 .025 .356 5.5°3° 10.033 .410 5°3° 10.414 9.779 10.414 3.302 .150 3.810 3.302 3.810 3° .036 3.048 .055 .205 3° 5° .094 .100 .110 .014.014 .021 3° 3° 5° .395.385 .410 .130 .150 .130 4.699 1.372 6° 2.794 .635 5.5° NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D04065A TO-220-2 C3D04065 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C3D04065A Rev. B Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 1.00 + (TJ * -1.1*10-3) RT = 0.069 + (TJ * 8.3*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes Schottky diode Spice models: http://response.cree.com/Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D04065A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power