C3D10060A VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier Qc = 24 nC Features Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • 600 V IF (TC=135˚C) = 14.5 A ® • • • • • • • = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C3D10060A TO-220-2 C3D10060 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V Continuous Forward Current 30 14.5 10 A TC=25˚C TC=135˚C TC=153˚C IF Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 46 31 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 90 71 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 860 680 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 136.5 59 W TC=25˚C TC=110˚C Fig. 4 Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in TJ , Tstg TO-220 Mounting Torque 1 Value C3D10060A Rev. D, 06-2015 M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8 2.4 V IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 IR Reverse Current 10 20 50 200 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 24 nC VR = 400 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 460.5 44 40 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 3.6 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.1 °C/W Fig. 9 Typical Performance 100 30 25 90 TJ = -55 °C TJ = 75 °C TJ = 125 °C TJ = 175 °C 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 70 TJ = 175 °C 60 TJ = 125 °C 50 TJ = 75 °C R 15 Reverse Leakage ICurrent, (mA) IRR (mA) 20 F Foward Current, I (A) IF (A) TJ = 25 °C C3D10060A Rev. D, 06-2015 4.0 4.5 5.0 40 TJ = 25 °C 30 TJ = -55 °C 20 10 0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics Typical Performance 100 160 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 80 140 120 100 F PTot(W) (W) PTOT IF(peak) (A) I (A) 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 175 25 ˚C TTCC(°C) 150 500 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 450 400 30 350 25 Capacitance C (pF)(pF) CapacitiveQ Charge, (nC) QC (nC) C 125 Figure 4. Power Derating 20 15 10 300 250 200 150 100 5 50 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 C Conditions: TJ = 25 °C 35 75 ˚C TTC (°C) Figure 3. Current Derating 40 50 C3D10060A Rev. D, 06-2015 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 10 9 7 IIFSM (A) (A) FSM 6 5 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 8 4 100 TJ = 25 °C TJ = 110 °C 3 2 1 0 0 100 200 300 400 500 600 10 10E-6 700 ReverseVVoltage, (V) VR (V) 1E-3 tp (s) Time, tp (s) R Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 100E-6 1 0.5 0.3 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D10060A Rev. D, 06-2015 100E-3 1 10E-3 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.397 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D10060A TO-220-2 C3D10060 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C3D10060A Rev. D, 06-2015 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 0.94 + (TJ * -1.3*10-3) RT = 0.044 + (TJ * 4.4*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes Schottky diode Spice models: http://response.cree.com/Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D10060A Rev. D, 06-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power