CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. Package Type : 440162 and 440161 PN: CGHV222 00F and CGH V22200P Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Gain @ 47 dBm 16.6 19.2 18.1 dB ACLR @ 47 dBm -37.4 -37.4 -35.6 dBc Drain Efficiency @ 47 dBm 31.5 31.9 34.8 % Note: Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.0 A Features 1.8 - 2.2 GHz Operation • 18 dB Gain • -35 dBc ACLR at 50 W PAVE • 31-35 % Efficiency at 50 W PAVE • High Degree of DPD Correction Can be Applied 15 Rev 1.0 – May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature3 TJ 225 ˚C Maximum Forward Gate Current IGMAX 32 mA 25˚C Maximum Drain Current IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C 1 τ 80 in-oz 3 Thermal Resistance, Junction to Case RθJC 1.22 ˚C/W 85˚C, PDISS = 96 W Thermal Resistance, Junction to Case4 RθJC 1.54 ˚C/W 85˚C, PDISS = 96 W TC -40, +150 ˚C Screw Torque Case Operating Temperature5 Note: Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV22200P 4 Measured for the CGHV22200F 5 See also, the Power Dissipation De-rating Curve on Page 6. 1 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 32 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 1.0 A Saturated Drain Current2 IDS 24 28.8 – A Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 32 mA DC Characteristics1 VDS = 6.0 V, VGS = 2.0 V RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted) Saturated Output Power3,4 PSAT – 240 – W VDD = 50 V, IDQ = 1.0 A Pulsed Drain Efficiency3 η – 65 – % VDD = 50 V, IDQ = 1.0 A, POUT = PSAT Gain G – 18.0 – dB VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm ACLR – -36.7 – dBc VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm η – 34.5 – % VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 1.0 A, POUT = 200 W Pulsed Input Capacitance7 CGS – 97 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance7 CDS – 13.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.94 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz 6 WCDMA Linearity6 Drain Efficiency6 Output Mismatch Stress3 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µS, Duty Cycle = 10% 4 PSAT is defined as IG = 3 mA peak. 5 Measured in CGHV22200-AMP 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. 7 Includes package and internal matching components. Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal ReturnLosses Losses Frequency Small SignalGain Gain and and Return vs. vs Frequency for for the CGHV22200 measured in CGHV22200-AMP Amplifier Circuit CGHV22200F measured in CGV22200F-TB Amplifier Circuit V, = IDQ=1.0 VDD =VDD 50=V,50IDQ 1.0 A A 25 20 15 Magnitude (dB) 10 5 0 -5 -10 -15 S11 -20 S21 S22 -25 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 Frequency (MHz) Figure 2. - Typical Gain and Drain Efficiency vs Input Power Figure 2. - Typical Pulsed Measurements vs Input Power of the ofCGHV22200 measured in CGHV22200-AMP Amplifier Circuit. the CGHV22200 measured in CGHV22200-TB Amplifier Circuit. = 50 V, = IDQ = 1.0GHz, A, FreqPulse = 2.1 GHz, VDS = 50 V, IDQ = 1.0 VDS A, Freq 2.1 Width = 100 µs, Duty Cycle = 10 % Pulse Width = 100 μs, Duty Cycle= 10 % 350 70 Pout Gain Drain Efficiency EFF Output Power (W) 250 60 50 Pout 200 40 150 30 Gain 100 20 50 10 0 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Gain (dB) & Drain Efficiency (%) 300 0 Input Power (dBm) Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance -10 Figure 3. - Typical WCDMA Transfer Characteristics Characteristics VDD = 50 V, IDS WCDMA = 1.0 A,Transfer 1c WCDMA, PAR = 7.5 dB 3GPP 64DPCHC 7.5 PAR 40 ACLR 1.8 GHz ACLR 2.0 GHz -15 35 ACLR 2.2 GHz Gain 1.8 GHz Gain 2.0 GHz -20 30 Gain 2.2 GHz EFF 2.0 GHz ACLR (dBc) 25 EFF 2.2 GHz -30 20 -35 15 -40 10 -45 5 -50 30 31 32 33 34 Gain (dB) & Drain Efficiency (%) EFF 1.8 GHz -25 35 36 37 38 39 40 41 42 43 44 45 46 47 0 Output Power (dBm) Figure 4. - Typical Gain, Drain Efficiency and ACLR vs Frequency of the CGHV22200 measured in CGHV22200-AMP Amplifier Circuit Linearity at Pave = 47 dBm over Frequency 1.0 A, P = 50 = V, 50Idq W,=1c WCDMA, PAR = 7.5 dB VDD = 50 V, IDS = CGHV22200 VddAVE 1 A, 1c WCDMA 7.5 dB PAR 40 -20 35 Drain Efficiency -25 Gain 25 Drain Efficiency ACLR 20 Gain -30 15 10 -35 ACLR 5 0 1.8 1.9 2.0 Frequency (GHz) 2.1 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 ACLR (dBc) Gain (dB) & Drain Efficiency (%) 30 CGHV22200 Rev 2.0 2.2 -40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Spectral Mask at Pave = 47 dBm with and without DPD Figure CGHV22200F 5. - CGHV22200 Spectral Mask at P = 47 dBm with and without DPD Vdd=50, Idq=1 A, Freq=2.14 GHz,AVE 1 C WCDMA 7.5 PAR VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR 0 -10 -20 -30 Uncorrected -40 Corrected -50 -60 -70 -80 2.125 2.13 2.135 2.14 2.145 2.15 2.155 Frequency (GHz) Figure 6. - CGHV22200 Typical Linearity under DPDPower vs. Output Power Typical Linerity under DPD vs. Output 50V, 1.0A, 2.14 GHz, 1ch WCDMA 7.5 PAR VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR 35 5 Efficiency Gain_UNCORR 30 -5 Gain_CORR EFF_CORR ACP_UNCORR 25 -15 ACP_CORR 20 -25 Gain 15 -35 ACP Uncorrected 10 -45 ACP Corrected 5 0 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) EFF_UNCORR -55 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 -65 Average Output Power (dBm) Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance FigureCGHV22200 7. - Intermodulation Distortion Output Power Intermodulation DistortionProducts Products vsvs Output Power Freq. = 2.1 VDD = 50 V,V,IDQ A, Tone Spacing = 100 kHz. Freq.GHz, 2.1 Ghz , Vdd = 50 Idq = = 11.0 A, Tone Spacing = 100 kHz 0 -IMD3 -10 +IMD3 Intermodulation Distortion (dBc) -IMD5 +IMD5 -20 -IMD7 +IMD7 -30 -40 -50 -60 -70 -80 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Output Power (dBm) Figure 8. - Power Dissipation Derating Curve 100 90 440161 Package 80 440162 Package Power Dissipation (W) 70 60 Note 1 50 40 30 20 10 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1800 10.6 - j7.3 2.7 + j0.6 1900 8.1 - j7.4 2.8 + j0.7 2000 6.1 - j6.6 2.9 + j0.8 2100 4.7 - j5.5 2.8 + j0.8 2200 3.7 - j4.3 2.6 + j0.8 Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package. Note2: Impedances are extracted from CGHV22200-AMP demonstration circuit and are not source and load pull data derived from transistor. Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV22200-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 10.0 OHMS 1 R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C4, C14, C24 CAP, 470 pF, 5%, 100 V, 0603, X 3 C6,C16, C26 CAP, 1.0 UF, 100 V, 10%, x7R, 121 3 C17, C27 C7 C1, C2, C3, C13, C23 CAP, 100 UF, 20%, 160 V, ELEC 2 CAP, 10 UF, 16 V, TANTALUM, 2312 1 CAP, 10.0 pF, 5%, 0603, ATC 5 CAP, 33000 pF, 0805, 100 V, X7R 3 CAP, 10 pF, 5%, 250 V, 0805, A 1 J1, J2 CONN, N, FEM, W/.500 SMA FLNG 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 PCB, CGHV22200F, RO4350,0.020” THK 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV22200 1 C5, C15, C25 C11 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV22200-AMP Demonstration Amplifier Circuit Schematic CGHV22200-AMP Demonstration Amplifier Circuit Outline Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV22200F (Package Type — 440162) Product Dimensions CGHV22200P (Package Type — 440161) Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV22200F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 2.2 GHz 200 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV22200F GaN HEMT Each CGHV22200P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV22200-TB CGHV22200F-AMP Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV22200 Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGHV22200 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf