Cree 2015 Power Sales Guide

SiC MODULES FOR EVERY POWER LEVEL
“The drop-in feature of Cree’s new all-SiC power
modules allows us to achieve 99 percent efficiency
while reducing the power module count by a factor
of 2.5 in our existing HF induction heating systems.”
—John K. Langelid, R&D Manager, EFD Induction
Six-Pack Evaluation Board
45mm Family
Compatible with EconoPack™ 2
1200V / 10–50kW
Our award winning all-SiC family of
modules in an industry standard 45mm
footprint allows engineers to take
advantage of the benefits of SiC (such as 5x lower switching losses) without significant
redesign. Increase the power rating of your 3-phase inverters while reducing power losses.
A Cree®-designed six-pack evaluation board is available for purchase, or download the full
reference design.
Half-Bridge Gate Driver
62mm Family
Compatible with SEMITRANS® 3
1200V, 1700V / 40–3000kW
All SiC half-bridge modules bring SiC into
the megawatt class of applications in a
commonly-used 62mm package that is
easy to implement and evaluate in existing
systems. With 5-7x lower switching losses
than equivalent IGBT modules, applications such as induction heating, central solar inverters
and AFE motor drives can achieve higher power density and efficiencies up to 99 percent.
Supporting SiC commercial gate drivers are available for purchase, or download Cree’s
reference design to implement your own solution.
Cree Z-Rec® SiC Schottky Diodes (cont.)
Part Number
VRRM (V)
IF (A)
I (A)
(rated)
F
(TC=135°C)
VF (T =25°C)
J
Typ Max
VF (T =175°C)
J
Typ Max
Qc
(nC)
Package
Type
C3D06065A
650
6
8.5
1.6
1.8
1.9
2.4
162
TO-220-2
C3D06065E
650
6
8.5
1.6
1.8
1.9
2.4
162
DPAK
C3D06065I
650
6
8.5
1.6
1.8
1.9
2.4
162
TO-220-Iso
C3D08065A
650
8
11
1.6
1.8
1.9
2.4
212
TO-220-2
C3D08065E
650
8
11
1.6
1.8
1.9
2.4
212
DPAK
C3D08065I
650
8
7
1.5
1.8
2
2.4
212
TO-220-Iso
C3D10065A
650
10
14
1.5
1.8
2
2.4
25
TO-220-2
C3D10065E
650
10
14
1.5
1.8
2
2.4
252
DPAK
C3D10065I
650
10
8.5
1.5
1.8
2
2.4
252
TO-220-Iso
2
2
TO-247-3
C3D16065D
650
16
22
1.6
1.8
1.9
2.4
42
CVFD20065A
650
20
26
1.35
1.45
1.65
1.8
621
TO-220-2
C3D20065D
650
20
28
1.5
1.8
2
2.4
502
TO-247-3
C5D50065D
650
50
50
1.5
1.8
1.8
2.2
1101
TO-247-3
C4D02120A
1200
2
6
1.4
1.8
1.9
3.0
113
TO-220-2
C4D02120E
1200
2
7
1.4
1.8
1.9
3.0
113
DPAK
C4D05120A
C4D05120E
C4D08120A
1200
1200
1200
5
5
8
8
9
11
1.4
1.4
1.5
1.8
1.8
1.8
1.9
1.9
2.2
3
3
3
283
283
373
TO-220-2
DPAK
TO-220-2
C4D08120E
1200
8
12
1.5
1.8
2.2
3
373
DPAK
C4D10120A
1200
10
14
1.5
1.8
2.2
3
513
TO-220-2
C4D10120D
C4D10120E
C4D15120A
1200
1200
1200
10
10
15
18
16
20
1.4
1.5
1.6
1.8
1.8
1.8
1.9
2.2
2.3
3
3
3
3
56
513
783
TO-247-3
DPAK
TO-220-2
C4D20120A
C4D20120D
1200
1200
20
20
25.5
33
1.5
1.5
1.8
1.8
2.2
2.2
3
3
993
1023
TO-220-2
TO-247-3
C4D30120D
1200
30
43
1.5
1.8
2.2
3
1563
TO-247-3
C4D40120D
1200
40
54
1.5
1.8
2.2
3
1983
TO-247-3
C3D10170H
1700
10
14.5
1.7
2
3
3.5
765
TO-247-2
C3D25170H
1700
25
26
1.8
2.5
3.2
4
1825
TO-247-2
Cree SiC Modules
CAS 120 M 12 B M 2
Switch Generation
Switch Type
Housing
Voltage Rating
Per Switch
Diode Current (H = Half,
M = Marked Current)
Current Per Switch
Three Digit Series
Cree Z-FET™ SiC MOSFETs: Bare die
CPM2-1200-0025 B
Metal
R DS(ON) ( mΩ)
Voltage Rating
Four Digit Series
Cree Z-FET SiC MOSFETs
C2M 0080 120 D
Package Code
Voltage Rating
R DS(ON) ( mΩ)
Three Digit Series
Cree Z-Rec SiC diodes: Bare die
CPW5-1700-Z 050 B
Top Metal
Amperage Rating
Aspect Ratio (Z= Square,
Cree Z-Rec SiC Schottky diodes - Bare Die
®
®
Part Number
IF (A)
VRRM (V)
(rated)
VF (T =25°C)
J
Typ Max
VF (T =175°C)
J
Typ Max
Qc
(nC)
Die Size
(mm)
CPWR-0600-S001B
CPW3-0600-S002B
CPW3-0600-S003B
CPW3-0600-S004B
CPW2-0600-S006B
CPW2-0600-S008B
CPW2-0600-S010B
CPW3-0650-S004B
CPW2-0650-S006B
600
600
600
600
600
600
600
650
650
1
2
3
4
6
8
10
4
6
1.6
1.5
1.5
1.5
1.6
1.6
1.5
1.5
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
2
1.8
1.8
1.8
1.9
1.9
2
1.8
1.9
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
3.32
4.82
6.72
8.52
162
212
252
8.52
162
1.07 x 0.66
1.07 x 0.66
1.07 x 0.92
1.13 x 1.13
1.55 x 1.55
1.77 x 1.77
1.92 x 1.92
1.13 x 1.13
1.55 x 1.55
CPW2-0650-S008B
CPW2-0650-S010B
CPW5-0650-Z030B
650
650
650
8
10
30
1.6
1.5
1.6
1.8
1.8
1.7
1.9
2
2.2
2.4
2.4
2.5
212
252
651
1.77 x 1.77
1.92 x 1.92
2.80 x 2.80
CPW5-0650-Z050B
CPW4-1200-S002B
650
1200
50
2
1.5
1.4
1.8
1.8
1.8
1.9
2.2
3
1101
113
3.50 x 3.50
1.18 x 1.18
CPW4-1200-S005B
CPW4-1200-S008B
CPW4-1200-S010B
CPW4-1200-S015B
CPW4-1200-S020B
CPW5-1200-Z050B
1200
1200
1200
1200
1200
1200
5
8
10
15
20
50
1.4
1.5
1.5
1.6
1.5
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.9
2.2
2.2
2.3
2.2
2.3
3
3
3
3
3
2.7
283
373
513
783
993
2463
1.69 x 1.69
2.00 x 2.00
2.26 x 2.26
2.70 x 2.70
3.08 x 3.08
4.90 x 4.90
CPW3-1700-S010B
CPW3-1700-S025B
CPW5-1700-Z050B
1700
1700
1700
10
25
50
1.7
1.8
1.6
2
2
1.9
3
3.2
2.5
3.5
4
2.8
965
1705
3704
3.78 x 2.68
5.70 x 3.94
6.00 x 6.00
1
at VR=400V;
2
at VR=600V;
3
at VR=800V;
4
at VR=1100V;
5
at VR=1200V
Y=Rectangular)
Voltage Rating
Four Digit Series
Cree Z-Rec SiC diodes
C4D 05 120 E
Package Code
Voltage Rating
Amperage Rating
Three Digit Series
Cree SiC Reference Designs and Evaluation Boards
®
Reduce design-cycle time and create rugged and reliable system designs with these
useful reference designs demonstrating proper design techniques when implementing
Cree SiC products.
Half-Bridge Gate Driver CGD15HB62P
• Cree designed dual-channel half-bridge gate
driver
• 1200V maximum
• Optimized for CAS300M12BM1
• Includes Desat and UVLO protection
• For engineering evaluation purposes
• Full reference design files available
Silicon Carbide Discrete Evaluation
Board KIT8020-CRD-8FF1217-1
• Universal evaluation board for SiC MOSFETs
and diodes
• Includes easy access to critical test points, such
as VGS, VDS and IDS
• Provides a good layout example for properly
driving MOSFETs and diodes with minimal
ringing
• Reference design includes a schematic,
mechanical drawing and BOM
Six-Pack Evaluation Board CGD15FB45P
• Cree designed 6-Pack evaluation board
Optimized for Cree’s CCSxxxM12CM2 power modules
• 1200V maximum
• Includes Desat and UVLO
• For engineering evaluation purposes
• Full reference design files available
CRD060DD12P 60W Auxiliary Power
Supply with C2M MOSFET
• 60W single-end HV flyback design, based on
Cree’s 1700V, 1 Ohm MOSFET
• Vin = 200-1000V, Vout = 12V/4.5A, 5V/0.5A,
-12V/0.25A
• Reference design includes BOM, schematic,
transformer spec, applications note, design files,
and Powerpoint® presentation
• Presentation contains efficiency calculations,
thermal images, and sample waveforms
TM
These boards
are available
for purchase.
Universal Gate Driver CRD-001
• Cree designed universal gate driver for all
C2M™ SiC MOSFETs
• Supports 1200V or 1700V MOSFETs
• Compatible with 1W and 2W DC-DC converters
• For engineering evaluation purposes
• Full reference design files available
50kW Boost Converter
• SiC MOSFET-based converter for PV applications
• 4-phase interleaved
• Vin = 400-600V, Vout = 800V
• Reference design includes schematic and
detailed Powerpoint presentation
• Presentation includes efficiency calculations,
thermal images, and sample waveforms
Phone: (919) 407-7888 | US Toll Free: (800) 533-2583 | Fax: (919) 407-5451
4600 Silicon Drive, Durham, NC 27703
creepower_sales@cree.com | www.cree.com/power
Copyright © 2015 Cree, Inc. All rights reserved. This document is provided for informational purposes only and is not a warranty or specification. The information in this
document is subject to change without notice. Cree and Z-Rec are registered trademarks, and the Cree logo and Z-FET are trademarks of Cree, Inc.
Published April 2015
Printed on 100% recycled paper with non-toxic soy-based ink.