SiC MODULES FOR EVERY POWER LEVEL “The drop-in feature of Cree’s new all-SiC power modules allows us to achieve 99 percent efficiency while reducing the power module count by a factor of 2.5 in our existing HF induction heating systems.” —John K. Langelid, R&D Manager, EFD Induction Six-Pack Evaluation Board 45mm Family Compatible with EconoPack™ 2 1200V / 10–50kW Our award winning all-SiC family of modules in an industry standard 45mm footprint allows engineers to take advantage of the benefits of SiC (such as 5x lower switching losses) without significant redesign. Increase the power rating of your 3-phase inverters while reducing power losses. A Cree®-designed six-pack evaluation board is available for purchase, or download the full reference design. Half-Bridge Gate Driver 62mm Family Compatible with SEMITRANS® 3 1200V, 1700V / 40–3000kW All SiC half-bridge modules bring SiC into the megawatt class of applications in a commonly-used 62mm package that is easy to implement and evaluate in existing systems. With 5-7x lower switching losses than equivalent IGBT modules, applications such as induction heating, central solar inverters and AFE motor drives can achieve higher power density and efficiencies up to 99 percent. Supporting SiC commercial gate drivers are available for purchase, or download Cree’s reference design to implement your own solution. Cree Z-Rec® SiC Schottky Diodes (cont.) Part Number VRRM (V) IF (A) I (A) (rated) F (TC=135°C) VF (T =25°C) J Typ Max VF (T =175°C) J Typ Max Qc (nC) Package Type C3D06065A 650 6 8.5 1.6 1.8 1.9 2.4 162 TO-220-2 C3D06065E 650 6 8.5 1.6 1.8 1.9 2.4 162 DPAK C3D06065I 650 6 8.5 1.6 1.8 1.9 2.4 162 TO-220-Iso C3D08065A 650 8 11 1.6 1.8 1.9 2.4 212 TO-220-2 C3D08065E 650 8 11 1.6 1.8 1.9 2.4 212 DPAK C3D08065I 650 8 7 1.5 1.8 2 2.4 212 TO-220-Iso C3D10065A 650 10 14 1.5 1.8 2 2.4 25 TO-220-2 C3D10065E 650 10 14 1.5 1.8 2 2.4 252 DPAK C3D10065I 650 10 8.5 1.5 1.8 2 2.4 252 TO-220-Iso 2 2 TO-247-3 C3D16065D 650 16 22 1.6 1.8 1.9 2.4 42 CVFD20065A 650 20 26 1.35 1.45 1.65 1.8 621 TO-220-2 C3D20065D 650 20 28 1.5 1.8 2 2.4 502 TO-247-3 C5D50065D 650 50 50 1.5 1.8 1.8 2.2 1101 TO-247-3 C4D02120A 1200 2 6 1.4 1.8 1.9 3.0 113 TO-220-2 C4D02120E 1200 2 7 1.4 1.8 1.9 3.0 113 DPAK C4D05120A C4D05120E C4D08120A 1200 1200 1200 5 5 8 8 9 11 1.4 1.4 1.5 1.8 1.8 1.8 1.9 1.9 2.2 3 3 3 283 283 373 TO-220-2 DPAK TO-220-2 C4D08120E 1200 8 12 1.5 1.8 2.2 3 373 DPAK C4D10120A 1200 10 14 1.5 1.8 2.2 3 513 TO-220-2 C4D10120D C4D10120E C4D15120A 1200 1200 1200 10 10 15 18 16 20 1.4 1.5 1.6 1.8 1.8 1.8 1.9 2.2 2.3 3 3 3 3 56 513 783 TO-247-3 DPAK TO-220-2 C4D20120A C4D20120D 1200 1200 20 20 25.5 33 1.5 1.5 1.8 1.8 2.2 2.2 3 3 993 1023 TO-220-2 TO-247-3 C4D30120D 1200 30 43 1.5 1.8 2.2 3 1563 TO-247-3 C4D40120D 1200 40 54 1.5 1.8 2.2 3 1983 TO-247-3 C3D10170H 1700 10 14.5 1.7 2 3 3.5 765 TO-247-2 C3D25170H 1700 25 26 1.8 2.5 3.2 4 1825 TO-247-2 Cree SiC Modules CAS 120 M 12 B M 2 Switch Generation Switch Type Housing Voltage Rating Per Switch Diode Current (H = Half, M = Marked Current) Current Per Switch Three Digit Series Cree Z-FET™ SiC MOSFETs: Bare die CPM2-1200-0025 B Metal R DS(ON) ( mΩ) Voltage Rating Four Digit Series Cree Z-FET SiC MOSFETs C2M 0080 120 D Package Code Voltage Rating R DS(ON) ( mΩ) Three Digit Series Cree Z-Rec SiC diodes: Bare die CPW5-1700-Z 050 B Top Metal Amperage Rating Aspect Ratio (Z= Square, Cree Z-Rec SiC Schottky diodes - Bare Die ® ® Part Number IF (A) VRRM (V) (rated) VF (T =25°C) J Typ Max VF (T =175°C) J Typ Max Qc (nC) Die Size (mm) CPWR-0600-S001B CPW3-0600-S002B CPW3-0600-S003B CPW3-0600-S004B CPW2-0600-S006B CPW2-0600-S008B CPW2-0600-S010B CPW3-0650-S004B CPW2-0650-S006B 600 600 600 600 600 600 600 650 650 1 2 3 4 6 8 10 4 6 1.6 1.5 1.5 1.5 1.6 1.6 1.5 1.5 1.6 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 2 1.8 1.8 1.8 1.9 1.9 2 1.8 1.9 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 3.32 4.82 6.72 8.52 162 212 252 8.52 162 1.07 x 0.66 1.07 x 0.66 1.07 x 0.92 1.13 x 1.13 1.55 x 1.55 1.77 x 1.77 1.92 x 1.92 1.13 x 1.13 1.55 x 1.55 CPW2-0650-S008B CPW2-0650-S010B CPW5-0650-Z030B 650 650 650 8 10 30 1.6 1.5 1.6 1.8 1.8 1.7 1.9 2 2.2 2.4 2.4 2.5 212 252 651 1.77 x 1.77 1.92 x 1.92 2.80 x 2.80 CPW5-0650-Z050B CPW4-1200-S002B 650 1200 50 2 1.5 1.4 1.8 1.8 1.8 1.9 2.2 3 1101 113 3.50 x 3.50 1.18 x 1.18 CPW4-1200-S005B CPW4-1200-S008B CPW4-1200-S010B CPW4-1200-S015B CPW4-1200-S020B CPW5-1200-Z050B 1200 1200 1200 1200 1200 1200 5 8 10 15 20 50 1.4 1.5 1.5 1.6 1.5 1.6 1.8 1.8 1.8 1.8 1.8 1.8 1.9 2.2 2.2 2.3 2.2 2.3 3 3 3 3 3 2.7 283 373 513 783 993 2463 1.69 x 1.69 2.00 x 2.00 2.26 x 2.26 2.70 x 2.70 3.08 x 3.08 4.90 x 4.90 CPW3-1700-S010B CPW3-1700-S025B CPW5-1700-Z050B 1700 1700 1700 10 25 50 1.7 1.8 1.6 2 2 1.9 3 3.2 2.5 3.5 4 2.8 965 1705 3704 3.78 x 2.68 5.70 x 3.94 6.00 x 6.00 1 at VR=400V; 2 at VR=600V; 3 at VR=800V; 4 at VR=1100V; 5 at VR=1200V Y=Rectangular) Voltage Rating Four Digit Series Cree Z-Rec SiC diodes C4D 05 120 E Package Code Voltage Rating Amperage Rating Three Digit Series Cree SiC Reference Designs and Evaluation Boards ® Reduce design-cycle time and create rugged and reliable system designs with these useful reference designs demonstrating proper design techniques when implementing Cree SiC products. Half-Bridge Gate Driver CGD15HB62P • Cree designed dual-channel half-bridge gate driver • 1200V maximum • Optimized for CAS300M12BM1 • Includes Desat and UVLO protection • For engineering evaluation purposes • Full reference design files available Silicon Carbide Discrete Evaluation Board KIT8020-CRD-8FF1217-1 • Universal evaluation board for SiC MOSFETs and diodes • Includes easy access to critical test points, such as VGS, VDS and IDS • Provides a good layout example for properly driving MOSFETs and diodes with minimal ringing • Reference design includes a schematic, mechanical drawing and BOM Six-Pack Evaluation Board CGD15FB45P • Cree designed 6-Pack evaluation board Optimized for Cree’s CCSxxxM12CM2 power modules • 1200V maximum • Includes Desat and UVLO • For engineering evaluation purposes • Full reference design files available CRD060DD12P 60W Auxiliary Power Supply with C2M MOSFET • 60W single-end HV flyback design, based on Cree’s 1700V, 1 Ohm MOSFET • Vin = 200-1000V, Vout = 12V/4.5A, 5V/0.5A, -12V/0.25A • Reference design includes BOM, schematic, transformer spec, applications note, design files, and Powerpoint® presentation • Presentation contains efficiency calculations, thermal images, and sample waveforms TM These boards are available for purchase. Universal Gate Driver CRD-001 • Cree designed universal gate driver for all C2M™ SiC MOSFETs • Supports 1200V or 1700V MOSFETs • Compatible with 1W and 2W DC-DC converters • For engineering evaluation purposes • Full reference design files available 50kW Boost Converter • SiC MOSFET-based converter for PV applications • 4-phase interleaved • Vin = 400-600V, Vout = 800V • Reference design includes schematic and detailed Powerpoint presentation • Presentation includes efficiency calculations, thermal images, and sample waveforms Phone: (919) 407-7888 | US Toll Free: (800) 533-2583 | Fax: (919) 407-5451 4600 Silicon Drive, Durham, NC 27703 [email protected] | www.cree.com/power Copyright © 2015 Cree, Inc. All rights reserved. This document is provided for informational purposes only and is not a warranty or specification. The information in this document is subject to change without notice. Cree and Z-Rec are registered trademarks, and the Cree logo and Z-FET are trademarks of Cree, Inc. Published April 2015 Printed on 100% recycled paper with non-toxic soy-based ink.