C3D04060F VRRM = Silicon Carbide Schottky Diode IF (TC=95˚C) = 4 A Z-Rec™ Rectifier (Full-Pak) Qc Features • • • • • • • • • 600 V = 8.5 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Fully Isolated Case TO-220-F2 Benefits • • • • • • PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway No Additional Isolation Required Part Number Package Marking C3D04060F TO-220-F2 C3D04060 Applications • • • CASE PIN 2 Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 150W-300W Motor Drives Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V 6 4 A TC=25˚C TC=95˚C TC=135˚C IF Continuous Forward Current 2.5 IFRM Repetitive Peak Forward Surge Current 21 13 A TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3 TC=110˚C, tP = 10 ms, Half Sine Wave, D=0.3 IFSM Non-Repetitive Peak Forward Surge Current 30 25 A TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3 TC=110˚C, tp = 10 mS, Half Sine Wave, D=0.3 IFSM Non-Repetitive Peak Forward Surge Current 110 A TC=25˚C, tP = 10 µs, Pulse Ptot Power Dissipation 13.1 5.7 W TC=25˚C TC=110˚C -55 to +175 ˚C 1 8.8 Nm lbf-in TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C3D04060F Rev. E M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.5 1.8 1.8 2.4 V IF = 4 A TJ=25°C IF = 4 A TJ=175°C IR Reverse Current 10 20 50 100 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C QC Total Capacitive Charge 8.5 nC VR = 600 V, IF = 4A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 251 22 21 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit Thermal Resistance from Junction to Case 11.5 °C/W Typical Performance 8.0 8 1010 99 TJ = TJ = TJ = TJ = 88 5.0 5 D1_25C D1_75C 4.0 4 D1_125C D1_175C 3 3.0 R IF Forward Voltage (A) IF Forward Current (A) 6.0 6 25°C 75°C 125°C 175°C 2.0 2 1.0 1 0.0 0 77 66 D4_25C D4_75C 55 D4_125C D4_175C 44 33 TJ = 25°C TJ = 75°C 22 TJ = 125°C TJ = 175°C 11 0.0 0.0 0.5 1.0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 2.0 2.5 3.0 VF Forward Voltage (V) VF Forward Voltage (V) Figure 1. Forward Characteristics 2 IRIReverse Current (μA) Reverse Current (uA) 7.0 7 C3D04060F Rev. E 00 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 VR Reverse Voltage Voltage (V)(V) VR Reverse Figure 2. Reverse Characteristics Typical Performance C3D04060F Current Derating D3_4A_FP 120 120 12 12 100 100 20% 30% 50% 70% DC 88 Duty* Duty* Duty* Duty* C Capacitance (pF) 10 10 66 C Capacitance (pF) F(PEAK) Current (A) ForwardCurrent IF(PEAK)I PeakPeak Forward (A) 14 14 8080 6060 D3_4A_FP 4040 44 2020 22 0 00 0 25 50 25 50 75 75 100 100 125 125 TC Case Temperature (°C) TC Case Temperature °C) * Frequency > 1KHz (° 150 150 175 1 1 175 10 10 VR Figure 3. Current Derating 100 100 1000 1000 VR Reverse Voltage(V) (V) Reverse Voltage Figure 4. Capacitance vs. Reverse Voltage 1E1 Zth (°C/W) 1E0 E-1 E-2 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 Time (s) Figure 5. Transient Thermal Impedance 3 C3D04060F Rev. E 1E3 Typical Performance 16 Power Dissipation (W) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 175 TC Case Temperature (°C) Figure 6. Power Derating Package Dimensions Package TO-220-F2 E A F POS B G C H P L S D T M N PIN 1 PIN 2 4 C3D04060F Rev. E CASE Inches Millimeters Min Max Min A .177 .193 4.5 Max 4.9 B .092 .108 2.34 2.74 6.9 C .248 .272 6.3 D .098 .114 2.5 2.9 E .390 .406 9.9 10.3 3.4 F .118 .134 3.0 G .122 .137 3.1 3.5 H .617 .633 15.67 16.07 L .039 .055 1.0 1.4 M .016 .031 0.4 0.8 N .185 .217 4.7 5.5 P 0 .154 0 3.9 S .476 .508 12.1 12.9 T .016 .031 0.4 0.8 NOTE: 1. Dimension L, M, T apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-F2 Part Number Package Marking C3D04060F TO-220-F2 C3D04060 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering Diode Model Diode Model CSD10060 VfVfT T==VTV+T+If*R If*RT T V -3 -3) 0.98+(T * -1.8*10 VTT==0.92 + (Tj * J-1.35*10 ) -4 -3 R 0.10+(T 9.16*10 RT =0.052 + (T *J*0.29*10 ) ) T= j Note: Tj = Diode Junction Temperature In Degrees Celsius VT 5 C3D04060F Rev. E RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D04060F Rev. E Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power