CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz 3.8 GHz Units Small Signal Gain 11.6 11.8 11.8 12.0 12.4 13.0 dB EVM at PAVE = 23 dBm 2.42 2.26 2.09 2.11 2.13 2.38 % EVM at PAVE = 36 dBm 1.97 1.74 1.68 1.79 2.01 2.37 % Drain Efficiency @ 36 dBm 20.8 21.9 23.5 25.4 27.4 29.1 % Input Return Loss 12.3 8.5 6.1 5.4 6.1 9.0 dB Note: Measured in the CGH35030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 15 Rev 4.0 – May 20 Features • 3.3 - 3.9 GHz Operation • 30 W Peak Power Capability • 12 dB Small Signal Gain • 4.0 W PAVE at < 2.0 % EVM • 25 % Drain Efficiency at 4 W PAVE • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/RF 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Units Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 14 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.0 mA 25˚C Maximum Drain Current IDMAX 3.0 A 25˚C Soldering Temperature2 TS 245 ˚C τ 60 in-oz RθJC 4.8 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature 3 85˚C Notes: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Documnet-Library 3 Measured for the CGH35030F at PDISS = 14 W Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 120 mA Saturated Drain Current IDS 5.8 7.0 – A VDS = 6.0 V, VGS = 2 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA DC Characteristics1 RF Characteristics 2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted) GSS 10 11.5 – dB VDD = 28 V, IDQ = 120 mA, PAVE = 23 dBm η 20 25 – % VDD = 28 V, IDQ = 120 mA, PAVE = 36 dBm Back-Off Error Vector Magnitude EVM1 – 2.5 – % VDD = 28 V, IDQ = 120 mA, PAVE = 23 dBm Error Vector Magnitude EVM2 – 2.0 – % VDD = 28 V, IDQ = 120 mA, PAVE = 36 dBm Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 120 mA Input Capacitance CGS – 9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Small Signal Gain Drain Efficiency4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35030F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 1.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP1 S21_V3_120 mA VDD = 28 V, IDQ = 120 mA 14 8 12 S21 (dB) 6 S21 4 11 2 10 0 9 -2 8 -4 7 -6 S11 6 -8 5 -10 4 -12 3 -14 2 S21 -16 1 S11 -18 0 S11 (dB) 13 -20 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 Frequency (GHz) 3.8 3.9 4 4.1 4.2 Figure 2.- Typical EVM and Efficiency at 23 dBm and 36 dBm vs Frequency measured CGH35030 in Broadband Amplifier Circuit CGH35030F-AMP 6.0 36% EVM @ 23 dBm 5.5 33% EVM @ 36 dBm 5.0 30% Efficiency @ 36 dBm 4.5 27% Efficiency 24% 3.5 21% 3.0 18% 2.5 15% 2.0 Efficiency EVM (%) 4.0 12% EVM 1.5 9% 1.0 6% 0.5 3% 0.0 0% 3.3 3.4 3.5 3.6 Frequency (GHz) 3.7 3.8 Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 3.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP VDD = 28 V, IDQ = 120 mA CGH35030F 15 30% 14 28% 13 26% 12 24% 22% Gain 20% Gain (dB) 9 18% Efficiency 8 16% 7 14% 6 12% 5 10% 4 Gain 8% 3 Drain Efficiency 6% 2 4% 1 2% 0 Drain Efficiency 11 10 0% 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Output Power (dBm) Figure 4.- Typical EVM and Efficiency vs Frequency measured CGH35030F in Broadband Amplifier Circuit CGH35030F-AMP 5.2 26% 4.8 24% 4.4 EVM 22% 4.0 Drain Efficiency 20% 18% Efficiency 3.2 16% 2.8 14% 2.4 12% 2.0 10% 1.6 8% EVM 1.2 Drain Efficiency EVM (%) 3.6 6% 0.8 4% 0.4 2% 0.0 0% 20 21 22 23 24 25 26 27 28 29 30 31 Output Power (dBm) 32 33 34 35 36 37 Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35030F VDD = 28 V, IDQ = 120 mA Typical Noise Performance Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35030 VDD = 28 V, IDQ = 120 mA Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 3300 3.3 - j9.2 13.4 - j11.4 3400 3.9 - j8.6 12.2 - j10.4 3500 4.5 - j8.5 11.1 - j9.4 3600 4.7 - j8.8 10.2 - j8.2 3700 4.3 - j9.0 9.5 - j7.1 Note 1. VDD = 28V, IDQ = 120 mA in the 440166 package. Note 2. Impedences are extracted from the CGH35030-AMP demonstration amplifier and are not source and load pull date derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35030F-AMP Demonstration Amplifier Circuit Bill of Materials Designator R1 Description Qty RES,1/16W,0603,1%,100 OHMS 1 R2 RES,1/16W,0603,1%,47 OHMS 1 C6 CAP, 470PF, 10%,100V, 0603 1 C17 CAP, 33 UF, 20%, G CASE 1 C16 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C8 CAP 10UF 16V TANTALUM 1 C13 CAP, 100.0pF, +/-5%, 0603 1 C1 CAP, 0.8pF, +/-0.05pF, 0603, ATC 1 C2,C9,C10 CAP, 0.7pF, +/-0.05pF, 0603, ATC 3 C4,C11 CAP, 10.0pF,+/-5%, 0603, ATC 2 C5,C12 CAP, 39pF, +/-5%, 0603, ATC 2 C7,C14 CAP,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 1 J2 HEADER RT>PLZ.1CEN LK 2 POS 1 J1 J3,J4 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH35030F 1 CGH35030F-AMP Demonstration Amplifier Circuit Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH35030F-AMP Demonstration Amplifier Circuit Schematic CGH35030F-AMP Demonstration Amplifier Circuit Outline 3-000538 REV2 CGH35030F-TB Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH35030 (Small Signal, VDS = 28 V, IDQ = 120 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.909 -152.96 11.93 92.31 0.023 6.73 0.393 -144.30 600 MHz 0.907 -158.23 10.00 87.72 0.023 3.05 0.401 -147.24 700 MHz 0.907 -162.20 8.59 83.77 0.023 0.01 0.410 -149.13 800 MHz 0.907 -165.34 7.51 80.24 0.023 -2.59 0.420 -150.43 900 MHz 0.907 -167.92 6.66 76.99 0.023 -4.90 0.431 -151.37 1.0 GHz 0.908 -170.10 5.98 73.96 0.023 -6.97 0.442 -152.11 1.1 GHz 0.908 -172.00 5.41 71.09 0.022 -8.87 0.454 -152.74 1.2 GHz 0.909 -173.67 4.94 68.35 0.022 -10.62 0.466 -153.31 1.3 GHz 0.910 -175.19 4.53 65.71 0.022 -12.23 0.478 -153.87 1.4 GHz 0.911 -176.58 4.18 63.16 0.022 -13.73 0.490 -154.44 1.5 GHz 0.912 -177.86 3.88 60.70 0.021 -15.13 0.503 -155.02 1.6 GHz 0.913 -179.07 3.61 58.30 0.021 -16.42 0.515 -155.64 1.7 GHz 0.914 179.79 3.38 55.96 0.020 -17.62 0.528 -156.28 1.8 GHz 0.915 178.71 3.17 53.68 0.020 -18.72 0.540 -156.96 1.9 GHz 0.916 177.66 2.98 51.45 0.020 -19.73 0.552 -157.67 2.0 GHz 0.917 176.65 2.81 49.27 0.019 -20.64 0.564 -158.41 2.1 GHz 0.918 175.67 2.66 47.14 0.019 -21.45 0.576 -159.17 2.2 GHz 0.919 174.72 2.52 45.05 0.018 -22.17 0.587 -159.97 2.3 GHz 0.921 173.78 2.39 43.00 0.018 -22.78 0.598 -160.79 2.4 GHz 0.922 172.86 2.27 40.99 0.017 -23.28 0.609 -161.62 2.5 GHz 0.923 171.95 2.16 39.02 0.017 -23.68 0.619 -162.48 2.6 GHz 0.924 171.05 2.06 37.08 0.016 -23.96 0.629 -163.36 2.7 GHz 0.925 170.16 1.97 35.18 0.016 -24.11 0.639 -164.24 2.8 GHz 0.926 169.28 1.89 33.31 0.015 -24.14 0.648 -165.15 2.9 GHz 0.927 168.41 1.81 31.47 0.015 -24.04 0.657 -166.06 3.0 GHz 0.927 167.53 1.74 29.66 0.015 -23.79 0.666 -166.98 3.2 GHz 0.929 165.79 1.61 26.12 0.014 -22.85 0.682 -168.84 3.4 GHz 0.931 164.05 1.49 22.69 0.013 -21.25 0.697 -170.73 3.6 GHz 0.932 162.30 1.39 19.35 0.012 -18.94 0.711 -172.64 3.8 GHz 0.933 160.54 1.30 16.10 0.012 -15.90 0.724 -174.56 4.0 GHz 0.934 158.76 1.23 12.92 0.011 -12.15 0.735 -176.49 4.2 GHz 0.935 156.96 1.16 9.80 0.011 -7.76 0.746 -178.43 4.4 GHz 0.936 155.14 1.10 6.75 0.011 -2.91 0.755 179.63 4.6 GHz 0.937 153.27 1.04 3.74 0.011 2.16 0.764 177.67 4.8 GHz 0.937 151.38 0.99 0.78 0.011 7.15 0.772 175.70 5.0 GHz 0.938 149.44 0.95 -2.15 0.012 11.82 0.779 173.71 5.2 GHz 0.938 147.46 0.91 -5.05 0.013 15.96 0.786 171.71 5.4 GHz 0.938 145.42 0.88 -7.92 0.014 19.45 0.791 169.69 5.6 GHz 0.938 143.34 0.85 -10.79 0.015 22.27 0.796 167.65 5.8 GHz 0.938 141.19 0.82 -13.65 0.016 24.42 0.801 165.58 6.0 GHz 0.937 138.98 0.79 -16.50 0.017 25.96 0.805 163.48 To download the s-parameters in s2p format, go to the CGH35030F Product Page and click on the documentation tab. Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH35030F (Package Type — 440166) Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH35030F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH35030-TB CGH35030F-AMP Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH35030F Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH35030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf