Cree C4D40120D Silicon Carbide Schottky Diode - Zero

C4D40120D
VRRM =
Silicon Carbide Schottky Diode
IF (TC=135˚C) = 54A**
Z-Rec Rectifier
®
Qc Features
•
•
•
•
•
= 198nC**
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
•
•
•
•
•
1200 V
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
•
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
Package
Marking
C4D40120D
TO-247-3
C4D40120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
1
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
(Per Leg/Device)
56.5/113
27/54
20/40
A
TC=25˚C
TC=135˚C
TC=150˚C
IFRM
Repetitive Peak Forward Surge Current
91*
61*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
130*
110*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IF,Max
Non-Repetitive Peak Forward Current
1150*
950*
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
266/532
114/228
W
TC=25˚C
TC=110˚C
Ptot
Power Dissipation (Per Leg/Device)
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
1
8.8
Nm
lbf-in
TO-247 Mounting Torque
*
Value
Per Leg,
**
Per Device
C4D40120D Rev. E
M3 Screw
6-32 Screw
Note
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
IR
Reverse Current
35
65
200
400
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC
Total Capacitive Charge
99
nC
VR = 800 V, IF = 20A
di/dt = 200 A/μs
TJ = 25°C
C
Total Capacitance
1500
93
67
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC
Thermal Resistance from Junction
to Case
0.29**
0.57*
*
Per Leg,
**
Max.
Unit
Test Conditions
Note
°C/W
Per Device
Typical Performance (Per Leg)
40
1
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
35
30
0.9
0.8
0.7
IR (mA)
IF (A)
25
20
15
0.6
0.5
0.4
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
0.3
10
0.2
5
0.1
0
0
1
2
3
VF (V)
Figure 1. Forward Characteristics
2
C4D40120D Rev. E
4
0
0
500
1000
VR (V)
Figure 2. Reverse Characteristics
1500
Typical Performance (Per Leg)
200
300.0
180
10%
20%
30%
50%
70%
DC
IF(peak) (A)
140
120
250.0
Duty
Duty
Duty
Duty
Duty
200.0
PTot (W)
160
100
80
150.0
100.0
60
40
50.0
20
0
25
50
75
100
125
150
0.0
175
25
TC ˚C
140
1600
120
1400
100
TC ˚C
125
150
175
1200
100
1000
80
C (pF)
Qrr (nC)
75
Figure 4. Power Derating
Figure 3. Current Derating
60
800
600
40
400
20
200
0
0
200
400
600
800
1000
0
1200
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
50
C4D40120D Rev. E
1
10
VR (V)
100
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
50
50.0
10000
10000
45
45.0
40
40.0
1000
1000
30.0
30
IFSM(A)
I
(A)
FSM
E (mJ)
EC Capacitive
Energy (uJ)
C
35
35.0
25
25.0
20
20.0
100
100
15
15.0
TJ = 25°C
TJ = 110°C
10
10.0
5.05
10
10
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
ttp(s)
(s)
p
VR Reverse Voltage (V)
VR (V)
Thermal
Resistance
Junction
To Case
Impedance,(˚C/W)
ZthJC (oC/W)
Figure 7. Typical Capacitance Stored Energy, per leg
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform), per leg
0.5
100E-3
0.3
0.1
10E-3
0.05
0.02
0.01
SinglePulse
1E-3
100E-6
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Device Transient Thermal Impedance
4
C4D40120D Rev. E
100E-3
1
Package Dimensions
Package TO-247-3
T
V
POS
U
W
Inches
Millimeters
Min
Max
Min
A
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b2
.075
.085
1.91
2.16
b3
.113
.133
2.87
3.38
b4
.113
.123
2.87
3.13
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
E2
.145
.201
3.68
5.10
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
5.44 BSC
N
3
3
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
9˚
11˚
9˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
Part Number
Package
Marking
C4D40120D
TO-247-3
C4D40120
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C4D40120D Rev. E
Max
Diode Model
Diode Model CSD04060
VfVTfT==
VTV+T+If*R
If*RT T
-3
V
VTT==0.965
+ (Tj *J*-1.3*10
) -3)
0.97+(T
-1.40*10
-3
RTT==0.096
+ (Tj * 1.06*10
) -4
0.023+(T
J* 2.71*10 )
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D40120D Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power