RENESAS RJS6005WDPK

Preliminary Datasheet
RJS6005WDPK
600V - 30A - Diode
SiC Schottky Barrier Diode
R07DS0901EJ0100
Rev.1.00
Nov 01, 2012
Features
 New semiconductor material: Silicon Carbide Diode
 No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
2, 4
4
1
1
2
1.
2.
3.
4.
3
Anode
Cathode
Anode
Cathode
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Symbol
VRM
IF Note1
IFSM Note1
Tj
Tstg
Ratings
600
15/30
90/180
150
–55 to +150
Unit
V
A
A
C
C
Notes: 1. Per leg/device
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF Note2
IR Note1
trr
Note2
Min


Typ
1.5

Max
1.8
10/20
Unit
V
A

15

ns
Test conditions
IF = 15 A
VR = 600 V
IF = 15 A, di/dt = 300A/s
Notes: 1. Per leg/device
2. Per leg
R07DS0901EJ0100Rev.1.00
Nov 01, 2012
Page 1 of 3
RJS6005WDPK
Preliminary
Main Characteristics
Reverse Recovery Time vs. di/dt (Typical)
Forward Current vs. Forward Voltage (Typical)
50
Reverse Recovery Time trr (ns)
Forward Current IF (A)
100
Ta = 25°C
10
150°C
1
Pulse test
0.1
0
1
2
3
4
Forward Voltage VF (V)
IF = 15 A
Ta = 25°C
40
30
20
10
0
0
100
200
300
400
500
di/dt (A/μs)
Capacitance vs. Reverse Voltage (Typical)
1000
Capaitace Cj (pF)
Ta = 25°C
100
10
1
10
100
1000
Reverse Voltage VR (V)
R07DS0901EJ0100Rev.1.00
Nov 01, 2012
Page 2 of 3
RJS6005WDPK
Preliminary
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
2.0
0.3
19.9 ± 0.2
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Ordering Information
Orderable Part Number
RJS6005WDPK-00#T0
R07DS0901EJ0100Rev.1.00
Nov 01, 2012
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 3 of 3
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