C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier ® IF (TC=135˚C) = = 8A 27 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • 1200 V Qc Features • • • • • VRRM = TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D05120A TO-220-2 C4D05120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 17 8 5 A TC=25˚C TC=135˚C TC=157˚C IFRM Repetitive Peak Forward Surge Current 26 18 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 46 36 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 400 320 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse 81 35 W TC=25˚C TC=110˚C Ptot Power Dissipation TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D05120A Rev. A M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.4 1.9 1.8 3 V IF = 5 A TJ=25°C IF = 5 A TJ=175°C IR Reverse Current 20 40 150 300 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 27 nC VR = 800 V, IF = 5A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 390 27 20 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 1.85 Max. Unit Test Conditions Note °C/W Typical Performance 10 1000 9 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 8 900 800 700 Current (µA) IR (μA) 6 5 F Current I (A) (A) 7 4 500 400 3 300 2 200 1 100 0 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0 0 0.5 1 1.5 2 2.5 VF (V) Voltage (V) Figure 1. Forward Characteristics 2 600 C4D05120A Rev. A 3 3.5 0 500 1000 1500 VR (V) Voltage (V) Figure 2. Reverse Characteristics 2000 Typical Performance 90.0 60 80.0 70.0 60.0 50.0 I 30 Duty Duty Duty Duty Duty PTot (W) 10% 20% 30% 50% 70% DC 40 (A) F(peak) Forward Current (A) IF(PEAK) Peak 50 20 40.0 30.0 20.0 10 10.0 0.0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC ˚C Tc Case Temperature T ˚C (°°C) C Figure 4. Power Derating Figure 3. Current Derating 35 450 400 30 350 25 300 250 C (pF) Qrr (nC) 20 15 200 150 10 100 5 50 0 0 0 200 400 600 800 0.1 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D05120A Rev. A 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 14 14.0 1000 1000 10.0 10 8.08 (A) IFSMIFSM (A) E (mJ) C EC Capacitive Energy (uJ) 12 12.0 6.06 100 100 TJ = 25°C TJ = 110°C 4.04 2.02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 100 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 VR Reverse Voltage (V) V (V) tptp(s) (s) R Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal (˚C/W) Junction ToResistance Case Impedance, ZthJC (oC/W) Figure 7. Typical Capacitance Stored Energy 1 0.5 0.3 0.1 0.05 100E-3 0.02 SinglePulse 0.01 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D05120A Rev. A 100E-3 1 Package Dimensions Package TO-220-2 Inches POS A B A J C P F Q B D X S E Y 1 2 G T Z U L M PIN 1 PIN 2 W N CASE Min Max .381 .410 9.677 10.414 .235 .255 5.969 Inc hes M illim eters 2.540 M .100 in M ax .120 M in M ax D A .395 .223 .410 E B C F D G E H F .235 .590 .102 .143 .337 1.105 .590 .500 .149 .255 .615 5.969 .112 2.591 .153 .337 8.560 1.147 .610 14.986 .153 .550 3.785 J G L H 1.127 J L N M P N V Max C P OS M H Millimeters Min 10.033 .337 3.048 10.414 5.664 8.560 6.477 14.986 2.845 3.632 8.560 28.067 15.494 12.700 3.886 15.621 3.886 29.134 13.970 R 1.147 0.197 28.626 29.134 R 0.197 .530 13.462 13.970 .025 .550 .036 .635 .914 R 0.010 R 0.254 .045 .055 1.143 1.397 .028 .036 .711 .914 .195 .055 .205 4.953 5.207 .045 1.143 1.397 .165 .205 .185 .195 4.953 4.191 5.207 4.699 Q P Q S S T T U U .170 4.318 .048 .180 .054 .048 .054 1.219 3° 6° 3° 5° 3° 3° 6° 3° 5° 3° 6° 3° 3°3° 5° 4.572 1.219 1.371 3° 5° 3° 5° 3° 5° 1.372 V V .100 .094 .110 2.794 2.388 2.794 W W X X Y Y Z .014 .014 3° 3° .395 .385 .130 .130 .021 .025 .356 5° 3° 5.5° .410 10.033 .410 .150 3.302 .150 .533 .356 5° 3° 10.414 9.779 3.810 3.302 .635 z 2.54 .110 6° 6° 6° 5.5° 10.414 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C4D05120A TO-220-2 C4D05120 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 6.477 C4D05120A Rev. A Diode Model VfT = VT + If * RT VT = 0.96 + (Tj * -1.22*10-3) RT = 0.08 + (Tj * 8.5*10-4) Note: Tj is diode junction temperature in degrees Celsius Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D05120A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power