Datasheet μPD46185092B μPD46185182B μPD46185362B 18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46185092B is a 2,097,152-word by 9-bit, the μPD46185182B is a 1,048,576-word by 18-bit and the μPD46185362B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46185092B, μPD46185182B and μPD46185362B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation • Two-tick burst for low DDR transaction size • Two input clocks (K and K#) for precise DDR timing at clock rising edges only • Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device • Internally self-timed write control • Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed. • User programmable impedance output (35 to 70 Ω) • Fast clock cycle time : 3.3 ns (300 MHz), 2.0 ns (250 MHz) • Simple control logic for easy depth expansion • JTAG 1149.1 compatible test access port R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 1 of 35 μPD46185092B, μPD46185182B, μPD46185362B Ordering Information Part No. μPD46185092BF1-E33-EQ1-A μPD46185092BF1-E40-EQ1-A μPD46185182BF1-E33-EQ1-A μPD46185182BF1-E40-EQ1-A μPD46185362BF1-E33-EQ1-A μPD46185362BF1-E40-EQ1-A μPD46185092BF1-E33Y-EQ1-A μPD46185092BF1-E40Y-EQ1-A μPD46185182BF1-E33Y-EQ1-A μPD46185182BF1-E40Y-EQ1-A μPD46185362BF1-E33Y-EQ1-A μPD46185362BF1-E40Y-EQ1-A μPD46185092BF1-E33-EQ1 μPD46185092BF1-E40-EQ1 μPD46185182BF1-E33-EQ1 μPD46185182BF1-E40-EQ1 μPD46185362BF1-E33-EQ1 μPD46185362BF1-E40-EQ1 μPD46185092BF1-E33Y-EQ1 μPD46185092BF1-E40Y-EQ1 μPD46185182BF1-E33Y-EQ1 μPD46185182BF1-E40Y-EQ1 μPD46185362BF1-E33Y-EQ1 μPD46185362BF1-E40Y-EQ1 R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Organization (word x bit) 2M x 9 1M x 18 512K x 36 2M x 9 1M x 18 Clock frequency Core Supply Voltage Operating Ambient Temperature 3.3ns 300MHz 1.8 ± 0.1 V TA = 0 to 70°C 4.0ns 250MHz Cycle time Package 165-pin PLASTIC 3.3ns 300MHz BGA 4.0ns 250MHz (13 x 15) 3.3ns 300MHz Lead-free 4.0ns 250MHz 3.3ns 300MHz 4.0ns 250MHz 3.3ns 300MHz 1.8 ±0.1 V TA = −40 to 85°C 1.8 ± 0.1 V TA = 0 to 70°C 4.0ns 250MHz 512K x 36 3.3ns 300MHz 4.0ns 250MHz 2M x 9 3.3ns 300MHz 4.0ns 250MHz 3.3ns 300MHz BGA 4.0ns 250MHz (13 x 15) 3.3ns 300MHz Lead 4.0ns 250MHz 1M x 18 512K x 36 2M x 9 1M x 18 512K x 36 3.3ns 300MHz 4.0ns 250MHz 3.3ns 300MHz 4.0ns 250MHz 3.3ns 300MHz 4.0ns 250MHz 165-pin PLASTIC 1.8 ±0.1 V TA = −40 to 85°C Page 2 of 35 μPD46185092B, μPD46185182B, μPD46185362B Pin Arrangement 165-pin PLASTIC BGA (13 x 15) (Top View) [μPD46185092B] 2M x 9 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS/72M A W# NC K# NC/144M R# A VSS/36M CQ B NC NC NC A NC/288M K BW0# A NC NC Q4 C NC NC NC VSS A A A VSS NC NC D4 D NC D5 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q5 VDDQ VSS VSS VSS VDDQ NC D3 Q3 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC NC NC H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q2 D2 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q7 D7 VDDQ VSS VSS VSS VDDQ NC NC Q1 M NC NC NC VSS VSS VSS VSS VSS NC NC D1 N NC D8 NC VSS A A A VSS NC NC NC P NC NC Q8 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A D0 to D8 Q0 to Q8 R# W# BW0# K, K# C, C# CQ, CQ# ZQ DLL# : Address inputs : Data inputs : Data outputs : Read input : Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : PLL disable TMS TDI TCK TDO VREF VDD VDDQ VSS NC NC/xxM : IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection : Expansion address for xxMb Remarks 1. ×××# indicates active LOW. 2. Refer to Package Dimensions for the index mark. 3. 2A, 7A, 10A and 5B are expansion addresses : 10A for 36Mb : 10A and 2A for 72Mb : 10A, 2A and 7A for 144Mb : 10A, 2A, 7A and 5B for 288Mb 2A and 10A of this product can also be used as NC. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 3 of 35 μPD46185092B, μPD46185182B, μPD46185362B Pin Arrangement 165-pin PLASTIC BGA (13 x 15) (Top View) [μPD46185182B] 1M x 18 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS/144M NC/36M W# BW1# K# NC/288M R# A VSS/72M CQ B NC Q9 D9 A NC K BW0# A NC NC Q8 C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A D0 to D17 Q0 to Q17 R# W# BW0#, BW1# K, K# C, C# CQ, CQ# ZQ DLL# : Address inputs : Data inputs : Data outputs : Read input : Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : PLL disable TMS TDI TCK TDO VREF VDD VDDQ VSS NC NC/xxM : IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection : Expansion address for xxMb Remarks 1. ×××# indicates active LOW. 2. Refer to Package Dimensions for the index mark. 3. 2A, 3A, 7A and 10A are expansion addresses : 3A for 36Mb : 3A and 10A for 72Mb : 3A, 10A and 2A for 144Mb : 3A, 10A, 2A and 7A for 288Mb 2A and 10A of this product can also be used as NC. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 4 of 35 μPD46185092B, μPD46185182B, μPD46185362B Pin Arrangement 165-pin PLASTIC BGA (13 x 15) (Top View) [μPD46185362B] 512K x 36 1 2 3 4 5 6 7 8 9 10 11 W# BW2# K# BW1# R# NC/36M VSS/144M CQ A CQ# B Q27 Q18 D18 A BW3# K BW0# A D17 Q17 Q8 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C# A A A TMS TDI VSS/288M NC/72M A D0 to D35 Q0 to Q35 R# W# BW0# to BW3# K, K# C, C# CQ, CQ# ZQ DLL# : Address inputs : Data inputs : Data outputs : Read input : Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : PLL disable TMS TDI TCK TDO VREF VDD VDDQ VSS NC NC/xxM : IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection : Expansion address for xxMb Remarks 1. ×××# indicates active LOW. 2. Refer to Package Dimensions for the index mark. 3. 2A, 3A, 9A and 10A are expansion addresses : 9A for 36Mb : 9A and 3A for 72Mb : 9A, 3A and 10A for 144Mb : 9A, 3A, 10A and 2A for 288Mb 2A and 10A of this product can also be used as NC. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 5 of 35 μPD46185092B, μPD46185182B, μPD46185362B Pin Description (1/2) Symbol Type A Input D0 to Dxx Input Q0 to Qxx Output R# Input W# Input BWx# Input K, K# Input C, C# Input Description Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K for READ cycles and must meet the setup and hold times around the rising edge of K# for WRITE cycles. All transactions operate on a burst of two words (one clock period of bus activity). These inputs are ignored when device is deselected, i.e., NOP (R# = W# = HIGH). Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See Pin Arrangement for ball site location of individual signals. x9 device uses D0 to D8. x18 device uses D0 to D17. x36 device uses D0 to D35. Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K and K# rising edges if C and C# are tied HIGH. Data is output in synchronization with C and C# (or K and K#), depending on the R# command. See Pin Arrangement for ball site location of individual signals. x9 device uses Q0 to Q8. x18 device uses Q0 to Q17. x36 device uses Q0 to Q35. Synchronous Read: When LOW this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous Write: When LOW this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous Byte Writes: When LOW these inputs cause their respective byte to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Pin Arrangement for signal to data relationships. x9 device uses BW0#. x18 device uses BW0#, BW1#. x36 device uses BW0# to BW3#. See Byte Write Operation for relation between BWx# and Dxx. Input Clock: A READ address and control input signal are input in synchronization with the rising edge of K and a WRITE address is input in synchronization with the rising edge of K#. Input data is input in synchronization with the rising edge of K and K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of C# is used as the output timing reference for first output data. The rising edge of C is used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C. When use of K and K# as the reference instead of C and C#, then fixed C and C# to HIGH. Operation cannot be guaranteed unless C and C# are fixed to HIGH (i.e. toggle of C and C#). R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 6 of 35 μPD46185092B, μPD46185182B, μPD46185362B (2/2) Symbol Type CQ, CQ# Output ZQ Input DLL# Input TMS TDI TCK Input TDO Output VREF − VDD Supply VDDQ Supply VSS Supply Power Supply: Ground NC − No Connect: These signals are not connected internally. Input Description Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. If C and C# are stopped (if K and K# are stopped in the single clock mode), CQ and CQ# will also stop. Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus impedance. Q, CQ and CQ# output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to ground. The output impedance can be minimized by directly connect ZQ to VDDQ. This pin cannot be connected directly to GND or left unconnected. The output impedance is adjusted every 20 μs upon power-up to account for drifts in supply voltage and temperature. After replacement for a resistor, the new output impedance is reset by implementing power-on sequence. PLL Disable: When debugging the system or board, the operation can be performed at a clock frequency slower than TKHKH (MAX.) without the PLL circuit being used, if DLL# = LOW. The AC/DC characteristics cannot be guaranteed. For normal operation, DLL# must be HIGH and it can be connected to VDDQ through a 10 kΩ or less resistor. IEEE 1149.1 Test Inputs: 1.8 V I/O level. These balls may be left Not Connected if the JTAG function is not used in the circuit. IEEE 1149.1 Clock Input: 1.8 V I/O level. This pin must be tied to VSS if the JTAG function is not used in the circuit. IEEE 1149.1 Test Output: 1.8 V I/O level. When providing any external voltage to TDO signal, it is recommended to pull up to VDD. HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. Power Supply: 1.8 V nominal. See Recommended DC Operating Conditions and DC Characteristics for range. Power Supply: Isolated Output Buffer Supply. Nominally 1.5 V. 1.8 V is also permissible. See Recommended DC Operating Conditions and DC Characteristics for range. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 7 of 35 μPD46185092B, μPD46185182B, μPD46185362B Block Diagram [μPD46185092B] 20 ADDRESS R# ADDRESS W# 20 REGISTRY & LOGIC K K# W# BW0# 18 OUTPUT BUFFER ARRAY 18 MUX OUTPUT SELECT R# MEMORY OUTPUT REGISTER & LOGIC 20 2 x 18 SENSE AMPS 18 REGISTRY WRITE DRIVER WRITE REGISTER DATA 9 D0 to D8 9 Q0 to Q8 2 CQ, CQ# K K K# K C, C# OR K, K# [μPD46185182B] 19 ADDRESS R# ADDRESS W# 19 REGISTRY & LOGIC K K# W# BW0# R# 36 OUTPUT BUFFER ARRAY 36 MUX OUTPUT SELECT & LOGIC MEMORY OUTPUT REGISTER REGISTRY D0 to D17 19 2 x 36 SENSE AMPS 36 WRITE DRIVER DATA 18 WRITE REGISTER BW1# 18 Q0 to Q17 2 CQ, CQ# K K K# K C, C# OR K, #K [μPD46185362B] 18 ADDRESS R# ADDRESS W# 18 REGISTRY & LOGIC K K# W# 72 OUTPUT BUFFER ARRAY 72 MUX OUTPUT SELECT & LOGIC MEMORY OUTPUT REGISTER REGISTRY 18 2 x 72 SENSE AMPS 36 72 WRITE DRIVER D0 to D35 DATA WRITE REGISTER BW0# BW1# BW2# BW3# 36 Q0 to Q35 2 CQ, CQ# R# K K# R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 K K C, C# OR K, K# Page 8 of 35 μPD46185092B, μPD46185182B, μPD46185362B Power-On Sequence in QDR II SRAM QDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. The following timing charts show the recommended power-on sequence. The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-down. Power-On Sequence Apply power and tie DLL# to HIGH. Apply VDDQ before VREF or at the same time as VREF. Provide stable clock for more than 20 μs to lock the PLL. Continuous min.4 NOP(R# = high) cycles are required after PLL lock up is done. PLL Constraints The PLL uses K clock as its synchronizing input and the input should have low phase jitter which is specified as TKC var. The PLL can cover 120 MHz as the lowest frequency. If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an undesired clock frequency. Power-On Waveforms VDD/VDDQ VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) DLL# Fix HIGH (or tied to VDDQ) Clock Unstable Clock 20 μs or more Stable Clock 4 Times NOP Normal Operation Start R# R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 9 of 35 μPD46185092B, μPD46185182B, μPD46185362B Truth Table Operation WRITE cycle CLK R# W# D or Q L→H × L Data in Load address, input write data on Input data DA (A+0) DA (A+1) consecutive K and K# rising edge Input clock K( t ) ↑ K#( t ) ↑ READ cycle L→H L × Data out Load address, output data on Output data QA (A+0) QA (A+1) consecutive C and C# rising edge Output clock C#(t+1) ↑ C(t+2) ↑ NOP (No operation) Clock stop L→H H H D = ×, Q = High-Z Stopped × × Previous state Remarks 1. H : HIGH, L : LOW, × : don’t care, ↑ : rising edge. 2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges. 3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of K. All control inputs are registered during the rising edge of K. 4. This device contains circuitry that ensure the outputs to be in high impedance during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging symmetrically. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 10 of 35 μPD46185092B, μPD46185182B, μPD46185362B Byte Write Operation [μPD46185092B] Operation Write D0 to D8 Write nothing K K# BW0# L→H − 0 − L→H 0 L→H − 1 − L→H 1 Remarks 1. H : HIGH, L : LOW, → : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. [μPD46185182B] Operation K# BW0# BW1# L→H − 0 0 − L→H 0 0 Write D0 to D8 L→H − 0 1 − L→H 0 1 Write D9 to D17 L→H − 1 0 − L→H 1 0 Write nothing L→H − 1 1 − L→H 1 1 Write D0 to D17 K Remarks 1. H : HIGH, L : LOW, → : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. [μPD46185362B] Operation K# BW0# BW1# BW2# BW3# L→H − 0 0 0 0 − L→H 0 0 0 0 L→H − 0 1 1 1 − L→H 0 1 1 1 Write D9 to D17 L→H − 1 0 1 1 − L→H 1 0 1 1 Write D18 to D26 L→H − 1 1 0 1 − L→H 1 1 0 1 Write D27 to D35 L→H − 1 1 1 0 − L→H 1 1 1 0 Write nothing L→H − 1 1 1 1 − L→H 1 1 1 1 Write D0 to D35 Write D0 to D8 K Remarks 1. H : HIGH, L : LOW, → : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# to BW3# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 11 of 35 μPD46185092B, μPD46185182B, μPD46185362B Bus Cycle State Diagram LOAD NEW WRITE ADDRESS AT K# Always LOAD NEW READ ADDRESS R# = LOW W# = LOW WRITE DOUBLE AT K# Always READ DOUBLE R# = LOW W# = LOW W# = HIGH R# = HIGH W# = HIGH WRITE PORT NOP Supply voltage provided R# = HIGH Power UP Supply voltage provided READ PORT NOP R_Init = 0 Remarks 1. The address is concatenated with 1 additional internal LSB to facilitate burst operation. The address order is always fixed as: xxx...xxx+0, xxx...xxx+1. Bus cycle is terminated at the end of this sequence (burst count = 2). 2. Read and write state machines can be active simultaneously. 3. State machine control timing sequence is controlled by K. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 12 of 35 μPD46185092B, μPD46185182B, μPD46185362B Electrical Characteristics Absolute Maximum Ratings Parameter Rating Unit VDD −0.5 to +2.5 V VDDQ −0.5 to VDD V Input voltage VIN −0.5 to VDD+0.5 (2.5 V MAX.) V Input / Output voltage VI/O −0.5 to VDDQ+0.5 (2.5 V MAX.) V Operating ambient temperature TA (E** series) 0 to 70 °C (E**Y series) −40 to 85 °C −55 to +125 °C Supply voltage Output supply voltage Storage temperature Symbol Conditions Tstg Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = 0 to 70°C, TA = −40 to 85°C) Parameter MIN. TYP. MAX. Unit VDD 1.7 1.8 1.9 V Output supply voltage VDDQ 1.4 VDD V 1 Input HIGH voltage VIH (DC) VREF +0.1 VDDQ+0.3 V 1, 2 Input LOW voltage VIL (DC) −0.3 VREF −0.1 V 1, 2 Clock input voltage VIN −0.3 VDDQ+0.3 V 1, 2 Reference voltage VREF 0.68 0.95 V Supply voltage Symbol Conditions Note Notes 1. During normal operation, VDDQ must not exceed VDD. 2. Power-up: VIH ≤ VDDQ+0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms Recommended AC Operating Conditions (TA = 0 to 70°C, TA = −40 to 85°C) Parameter Symbol Input HIGH voltage VIH (AC) Input LOW voltage VIL (AC) Conditions MIN. MAX. VREF +0.2 VREF −0.2 Unit Note V 1 V 1 Note 1. Overshoot: VIH (AC) ≤ VDD+0.7 V (2.5 V MAX.) for t ≤ TKHKH/2 Undershoot: VIL (AC) ≥−0.5 V for t ≤ TKHKH/2 Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than TKHKH (MIN.). R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 13 of 35 μPD46185092B, μPD46185182B, μPD46185362B DC Characteristics 1 (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V) Parameter Symbol Test condition MIN. MAX. x9 x18 Unit Note x36 Input leakage current ILI −2 +2 μA I/O leakage current ILO −2 +2 μA Operating supply current IDD (Read cycle / Write cycle) VIN ≤ VIL or VIN ≥ VIH, -E33 570 690 770 Cycle = MAX. -E40 510 610 690 VIN ≤ VIL or VIN ≥ VIH, -E33 310 320 340 -E40 300 310 330 mA II/O = 0 mA, Standby supply current ISB1 (NOP) mA II/O = 0 mA, Cycle = MAX. Inputs static Output HIGH voltage VOH(Low) VOH Output LOW voltage VOL(Low) VOL Notes 1. 2. 3. 4. |IOH| ≤ 0.1 mA Note1 IOL ≤ 0.1 mA Note2 VDDQ V 3,4 VDDQ/2−0.12 VDDQ/2+0.12 V 3,4 VSS 0.2 V 3,4 VDDQ/2−0.12 VDDQ/2+0.12 V 3,4 VDDQ−0.2 Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. AC load current is higher than the shown DC values. HSTL outputs meet JEDEC HSTL Class I standards. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 14 of 35 μPD46185092B, μPD46185182B, μPD46185362B DC Characteristics 2 (TA = −40 to 85°C, VDD = 1.8 ± 0.1 V) Parameter Symbol Test condition MIN. MAX. x9 x18 Unit Note x36 Input leakage current ILI −2 +2 μA I/O leakage current ILO −2 +2 μA Operating supply current IDD (Read cycle / Write cycle) VIN ≤ VIL or VIN ≥ VIH, -E33Y 700 820 910 Cycle = MAX. -E40Y 640 740 830 VIN ≤ VIL or VIN ≥ VIH, -E33Y 430 440 470 -E40Y 420 430 460 mA II/O = 0 mA, Standby supply current ISB1 (NOP) mA II/O = 0 mA, Cycle = MAX. Inputs static Output HIGH voltage VOH(Low) VOH Output LOW voltage VOL(Low) VOL Notes 1. 2. 3. 4. |IOH| ≤ 0.1 mA Note1 IOL ≤ 0.1 mA Note2 VDDQ V 3,4 VDDQ/2−0.12 VDDQ/2+0.12 V 3,4 VSS 0.2 V 3,4 VDDQ/2−0.12 VDDQ/2+0.12 V 3,4 VDDQ−0.2 Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) ±15% for values of 175 Ω ≤ RQ ≤ 350 Ω. AC load current is higher than the shown DC values. HSTL outputs meet JEDEC HSTL Class I standards. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 15 of 35 μPD46185092B, μPD46185182B, μPD46185362B Capacitance (TA = 25°C, f = 1 MHz) Parameter Symbol Test conditions MIN. MAX. Unit Input capacitance (Address, Control) CIN VIN = 0 V 5 pF Input / Output capacitance CI/O VI/O = 0 V 7 pF Cclk Vclk = 0 V 6 pF (D, Q, CQ, CQ#) Clock Input capacitance Remark These parameters are periodically sampled and not 100% tested. Thermal Characteristics Parameter Thermal resistance Symbol θ ja Substrate 4-layer from junction to ambient air 8-layer Thermal characterization parameter Ψ jt 4-layer from junction to the top center of the package surface Thermal resistance 8-layer θ jc Airflow TYP. Unit 0 m/s 16.5 °C/W 1 m/s 13.2 °C/W 0 m/s 15.5 °C/W 1 m/s 12.6 °C/W 0 m/s 0.07 °C/W 1 m/s 0.13 °C/W 0 m/s 0.06 °C/W 1 m/s 0.12 °C/W 3.86 °C/W from junction to case R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 16 of 35 μPD46185092B, μPD46185182B, μPD46185362B AC Characteristics (TA = 0 to 70°C, TA = −40 to 85°C, VDD = 1.8 ± 0.1 V) AC Test Conditions (VDD = 1.8 ± 0.1 V, VDDQ = 1.4 V to VDD) Input waveform (Rise / Fall time ≤ 0.3 ns) 1.25 V 0.75 V Test Points 0.75 V 0.25 V Output waveform Test Points VDDQ / 2 VDDQ / 2 Output load condition Figure 1. External load at test VDDQ / 2 0.75 V 50 Ω VREF ZO = 50 Ω SRAM 250 Ω ZQ R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 17 of 35 μPD46185092B, μPD46185182B, μPD46185362B Read and Write Cycle Parameter Clock Average Clock cycle time (K, K#, C, C#) Clock phase jitter (K, K#, C, C#) Clock HIGH time (K, K#, C, C#) Clock LOW time (K, K#, C, C#) Clock HIGH to Clock# HIGH (K → K#, C → C#) Clock# HIGH to Clock HIGH (K# → K, C# → C) Clock to data clock (K → C, K# → C#) PLL lock time (K, C) K static to PLL reset Output Times CQ HIGH to CQ# HIGH (CQ → CQ#) CQ# HIGH to CQ HIGH (CQ# → CQ) C, C# HIGH to output valid C, C# HIGH to output hold C, C# HIGH to echo clock valid C, C# HIGH to echo clock hold CQ, CQ# HIGH to output valid CQ, CQ# HIGH to output hold C HIGH to output High-Z C HIGH to output Low-Z Setup Times Address valid to K rising edge Control inputs (R#, W#) valid to K rising edge Data inputs and write data select inputs (BWx#) valid to K, K# rising edge Hold Times K rising edge to address hold K rising edge to control inputs (R#, W#) hold K, K# rising edge to data inputs and write data select inputs (BWx#) hold R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Symbol -E33,-E33Y (300 MHz) MIN. MAX. 4.0 Unit Note 8.4 ns 1 0.2 2 TKHKH 3.3 TKC var TKHKL TKLKH TKHK#H 1.32 1.32 1.49 1.6 1.6 1.8 ns ns ns ns TK#HKH 1.49 1.8 ns TKHCH 0 TKC lock TKC reset 20 30 20 30 μs ns 3 4 TCQHCQ#H 1.24 1.55 ns 5 TCQ#HCQH 1.24 1.55 ns 5 TCHQV TCHQX TCHCQV TCHCQX TCQHQV TCQHQX TCHQZ TCHQX1 8.4 -E40,-E40Y (250 MHz) MIN. MAX. 0.2 1.45 0 0.45 1.8 −0.45 −0.45 ns ns ns ns ns ns ns ns TAVKH TIVKH 0.3 0.3 0.35 0.35 ns ns 7 7 TDVKH 0.3 0.35 ns 7 TKHAX TKHIX 0.3 0.3 0.35 0.35 ns ns 7 7 TKHDX 0.3 0.35 ns 7 −0.45 0.45 ns −0.45 0.45 −0.45 0.45 −0.45 0.27 −0.27 0.3 −0.3 0.45 0.45 6 6 Page 18 of 35 μPD46185092B, μPD46185182B, μPD46185362B Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH (MAX.) without the PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.0 clock cycle in this operation. The AC/DC characteristics cannot be guaranteed, however. 2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var (MAX.) indicates a peak-to-peak value. 3. VDD slew rate must be less than 0.1 V DC per 50 ns for PLL lock retention. PLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept NOP (R# = W# = HIGH) during these cycles. 4. K input is monitored for this operation. See below for the timing. K or TKC reset K TKC reset 5. Guaranteed by design. 6. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ± 0.1 ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. 7. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. Remarks 1. This parameter is sampled. 2. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. 3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.). 4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters. 5. VDDQ is 1.5 V DC. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 19 of 35 μPD46185092B, μPD46185182B, μPD46185362B Read and Write Timing READ WRITE READ WRITE 1 2 3 4 READ WRITE 5 NOP 6 WRITE 7 8 NOP 9 10 K TKHKL TKLKH TKHKH TKHK#H TK#HKH K# R# TKHIX TIVKH W# Address A0 A1 TAVKH Data in A2 A3 A4 A5 A6 D50 D51 TKHAX TKHAX TAVKH D11 D30 D10 D31 TDVKH TKHDX Data out D60 D61 TDVKH TKHDX Q00 Q01 TCHQX TCHQX Q20 Q21 Q41 TCQHQX TCHQX1 TCHQV Q40 TCHQV TCQHQV TCHQZ CQ TCHCQX TCHCQV TCQHCQ#H TCQ#HCQH CQ# TKHCH TCHCQX TCHCQV C TKHKL TKHKH TKLKH TKHK#H TK#HKH TKHCH C# Remarks 1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0,i.e.,A0+1. 2. Outputs are disabled (high impedance) 2.5 clock cycles after the last READ (R# = LOW) is input in the sequences of [READ/WRITE]-[NOP/WRITE], [READ/WRITE]-[NOP/NOP], [READ/NOP][NOP/WRITE] and [READ/NOP] -[NOP/NOP]. 3. In this example, if address A0 = A1, data Q00 = D10, Q01 = D11. Write data is forwarded immediately as read results. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 20 of 35 μPD46185092B, μPD46185182B, μPD46185362B Application Example SRAM#1 D Vt SRAM Controller A R# ZQ CQ# CQ Q R= 250 Ω D ZQ CQ# CQ Q A R# W# BWx# C/C# K/K# ... SRAM#4 W# BWx# C/C# K/K# R= 250 Ω R Data In Data Out R Address Vt R R# Vt W# BW# ... SRAM#1 CQ/CQ# SRAM#4 CQ/CQ# Vt R Vt R Source CLK/CLK# Return CLK/CLK# Vt R R = 50 Ω Vt = Vref Remark AC Characteristics are defined at the condition of SRAM outputs, CQ, CQ# and Q with termination. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 21 of 35 μPD46185092B, μPD46185182B, μPD46185362B JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins Pin name Pin assignments Description TCK 2R TMS 10R TDI 11R Test Data Input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 1R Test Data Output. This is the output side of the serial registers placed between TDI and TDO. Output changes in response to the falling edge of TCK. Test Clock Input. All input are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. Test Mode Select. This is the command input for the TAP controller state machine. Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held HIGH for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP. JTAG DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V, unless otherwise noted) Parameter Symbol Conditions MIN. MAX. Unit JTAG Input leakage current ILI 0 V ≤ VIN ≤ VDD −5.0 +5.0 μA JTAG I/O leakage current ILO 0 V ≤ VIN ≤ VDDQ, −5.0 +5.0 μA Outputs disabled JTAG input HIGH voltage VIH 1.3 VDD+0.3 V JTAG input LOW voltage VIL −0.3 +0.5 V JTAG output HIGH voltage JTAG output LOW voltage R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 VOH1 | IOHC | = 100 μA 1.6 V VOH2 | IOHT | = 2 mA 1.4 V VOL1 IOLC = 100 μA 0.2 V VOL2 IOLT = 2 mA 0.4 V Page 22 of 35 μPD46185092B, μPD46185182B, μPD46185362B JTAG AC Test Conditions Input waveform (Rise / Fall time ≤ 1 ns) 1.8 V 0.9 V Test Points 0.9 V 0.9 V Test Points 0.9 V 0V Output waveform Output load Figure 2. External load at test VTT = 0.9 V 50 Ω ZO = 50 Ω TDO 20 pF R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 23 of 35 μPD46185092B, μPD46185182B, μPD46185362B JTAG AC Characteristics (TA = 0 to 70°C) Parameter Symbol Conditions MIN. MAX. Unit Clock Clock cycle time tTHTH 50 ns Clock frequency fTF Clock HIGH time tTHTL 20 20 MHz ns Clock LOW time tTLTH 20 ns TCK LOW to TDO unknown tTLOX 0 TCK LOW to TDO valid tTLOV Output time ns 10 ns Setup time TMS setup time tMVTH 5 ns TDI valid to TCK HIGH tDVTH 5 ns tCS 5 ns TMS hold time tTHMX 5 ns TCK HIGH to TDI invalid tTHDX 5 ns tCH 5 ns Capture setup time Hold time Capture hold time JTAG Timing Diagram tTHTH TCK tMVTH tTHTL tTLTH TMS tTHMX tDVTH TDI tTHDX tTLOX tTLOV TDO R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 24 of 35 μPD46185092B, μPD46185182B, μPD46185362B Scan Register Definition (1) Register name Description Instruction register The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state. Bypass register The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR state. Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to activate the boundary register. The Scan Exit Order tables describe which device bump connects to each boundary register location. The first column defines the bit’s position in the boundary register. The second column is the name of the input or I/O at the bump and the third column is the bump number. Scan Register Definition (2) Register name Bit size Unit Instruction register 3 bit Bypass register 1 bit ID register 32 bit Boundary register 107 bit ID Register Definition Part number Organization ID [31:28] vendor revision no. ID [27:12] part no. ID [11:1] vendor ID no. ID [0] fix bit μPD46185092B 2M x 9 XXXX 0000 0000 0101 0001 00000010000 1 μPD46185182B 1M x 18 XXXX 0000 0000 0000 1101 00000010000 1 μPD46185362B 512K x 36 XXXX 0000 0000 0000 1110 00000010000 1 R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 25 of 35 μPD46185092B, μPD46185182B, μPD46185362B SCAN Exit Order Bit no. Signal name Bump Bit x18 ID no. x9 x18 x9 x36 Signal name Bump Bit x36 ID no. Signal name Bump x9 x18 x36 ID 1 C# 6R 37 NC NC D15 10D 73 NC NC Q28 2C 2 C 6P 38 NC NC Q15 9E 74 Q5 Q11 Q20 3E 3 A 6N 39 NC Q7 Q7 10C 75 D5 D11 D20 2D 4 A 7P 40 NC D7 D7 11D 76 NC NC D29 2E 5 A 7N 41 NC NC D16 9C 77 NC NC Q29 1E 6 A 7R 42 NC NC Q16 9D 78 NC Q12 Q21 2F 7 A 8R 43 Q4 Q8 Q8 11B 79 NC D12 D21 3F 8 A 8P 44 D4 D8 D8 11C 80 NC NC D30 1G 9 A 9R 45 NC NC D17 9B 81 NC NC Q30 1F 10 Q0 11P 46 NC NC Q17 10B 82 Q6 Q13 Q22 3G 11 D0 10P 47 CQ 11A 83 D6 D13 D22 2G – Internal 84 NC NC D31 1J 9A 85 NC NC Q31 2J 12 NC NC D9 10N 48 13 NC NC Q9 9P 49 14 NC Q1 Q1 10M 50 A 8B 86 NC Q14 Q23 3K 15 NC D1 D1 11N 51 A 7C 87 NC D14 D23 3J 16 NC NC D10 9M 52 A 6C 88 NC NC D32 2K 17 NC NC Q10 9N 53 R# 8A 89 NC NC Q32 1K 18 Q1 Q2 Q2 11L 54 NC BW1# 7A 90 Q7 Q15 Q24 2L 19 D1 D2 D2 11M 55 BW0# 7B 91 D7 D15 D24 3L 20 NC NC D11 9L 56 K 6B 92 NC NC D33 1M 21 NC NC Q11 10L 57 K# 6A 93 NC NC Q33 1L 22 NC Q3 Q3 11K 58 NC NC BW3# 5B 94 NC Q16 Q25 3N 23 NC D3 D3 10K 59 NC BW1# BW2# 5A 95 NC D16 D25 3M 24 NC NC D12 9J 60 W# 4A 96 NC NC D34 1N 25 NC NC Q12 9K 61 A 5C 97 NC NC Q34 2M 26 Q2 Q4 Q4 10J 62 A 4B 98 Q8 Q17 Q26 3P 27 D2 D4 D4 11J 63 3A 99 D8 D17 D26 2N 11H 64 DLL# 1H 100 NC NC D35 2P CQ# 1A 101 NC NC Q35 1P 28 ZQ A NC A A NC NC NC 29 NC NC D13 10G 65 30 NC NC Q13 9G 66 NC Q9 Q18 2B 102 A 3R 31 NC Q5 Q5 11F 67 NC D9 D18 3B 103 A 4R 32 NC D5 D5 11G 68 NC NC D27 1C 104 A 4P 33 NC NC D14 9F 69 NC NC Q27 1B 105 A 5P 34 NC NC Q14 10F 70 NC Q10 Q19 3D 106 A 5N 35 Q3 Q6 Q6 11E 71 NC D10 D19 3C 107 A 5R 36 D3 D6 D6 10E 72 NC NC D28 1D R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 26 of 35 μPD46185092B, μPD46185182B, μPD46185362B JTAG Instructions Instructions Description EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output pins are used to apply test vectors, while those at input pins capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output drive is turned on and the PRELOAD data is driven onto the output pins. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. BYPASS When the BYPASS instruction is loaded in the instruction register, the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shiftDR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and Q pins into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable input will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM Q pins are forced to an inactive drive state (high impedance) and the boundary register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. JTAG Instruction Coding IR2 IR1 IR0 Instruction 0 0 0 EXTEST Note 0 0 1 IDCODE 0 1 0 SAMPLE-Z 1 0 1 1 RESERVED 2 1 0 0 SAMPLE / PRELOAD 1 0 1 RESERVED 2 1 1 0 RESERVED 2 1 1 1 BYPASS Notes 1. TRISTATE all Q pins and CAPTURE the pad values into a SERIAL SCAN LATCH. 2. Do not use this instruction code because the vendor uses it to evaluate this product. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 27 of 35 μPD46185092B, μPD46185182B, μPD46185362B Output Pin States of CQ, CQ# and Q Instructions Control-Register Status Output Pin Status CQ,CQ# Q 0 Update High-Z 1 Update Update 0 SRAM SRAM 1 SRAM SRAM SAMPLE-Z 0 High-Z High-Z 1 High-Z High-Z SAMPLE 0 SRAM SRAM 1 SRAM SRAM 0 SRAM SRAM 1 SRAM SRAM EXTEST IDCODE BYPASS Remark The output pin statuses during each instruction vary according to the Control-Register status (value of Boundary Scan Register, bit no. 48). Boundary Scan Register CAPTURE Register There are three statuses: Update : Contents of the “Update Register” are output to SRAM : Contents of the SRAM internal output “SRAM SRAM Output Update Register the output pin (QDR Pad). Update Output” are output to the output pin (QDR Pad). High-Z : The output pin (QDR Pad) becomes high impedance by controlling of the “High-Z JTAG QDR Pad SRAM ctrl”. High-Z The Control-Register status is set during Update-DR at the EXTEST or SAMPLE instruction. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 SRAM Output Driver High-Z JTAG ctrl Page 28 of 35 μPD46185092B, μPD46185182B, μPD46185362B Boundary Scan Register Status of Output Pins CQ, CQ# and Q Instructions SRAM Status Boundary Scan Register Status CQ,CQ# Q READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad READ (Low-Z) – – NOP (High-Z) – – SAMPLE-Z READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad SAMPLE READ (Low-Z) Internal Internal NOP (High-Z) Internal Pad READ (Low-Z) – – NOP (High-Z) – – EXTEST IDCODE BYPASS Remark The Boundary Scan Register statuses during execution each instruction vary according to the instruction code and SRAM operation mode. Note No definition No definition Boundary Scan Register CAPTURE Register There are two statuses: Internal Pad : Contents of the output pin (QDR Pad) are captured in the “CAPTURE Register” in the Boundary Scan Update Register Pad SRAM Output Register. Internal : Contents of the SRAM internal output “SRAM Output” are captured in the “CAPTURE Register” in the Boundary Scan Register. QDR Pad SRAM Output Driver High-Z JTAG ctrl R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 29 of 35 μPD46185092B, μPD46185182B, μPD46185362B TAP Controller State Diagram 1 Test-Logic-Reset 0 1 0 1 1 Select-IR-Scan Select-DR-Scan Run-Test / Idle 0 0 1 1 Capture-IR Capture-DR 0 0 0 Shift-DR 0 Shift-IR 1 1 1 1 Exit1-DR Exit1-IR 0 0 0 Pause-DR 0 Pause-IR 1 1 0 0 Exit2-DR Exit2-IR 1 1 Update-DR 1 Update-IR 0 1 0 Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS may be left open but fix them to VDD via a resistor of about 1 kΩ when the TAP controller is not used. TDO should be left unconnected also when the TAP controller is not used. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 30 of 35 New Instruction μPD46185092B, μPD46185182B, μPD46185362B Run-Test/Idle Update-IR Exit1-IR Shift-IR Exit2-IR IDCODE Pause-IR Exit1-IR Shift-IR R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Select-IR-Scan Run-Test/Idle Instruction Register state TDI Controller state TMS Test-Logic-Reset TDO Output Inactive Select-DR-Scan TCK Test Logic Operation (Instruction Scan) Capture-IR Page 31 of 35 IDCODE μPD46185092B, μPD46185182B, μPD46185362B Test-Logic-Reset Select-IR-Scan Select-DR-Scan Run-Test/Idle Update-DR Exit1-DR Shift-DR Exit2-DR Instruction Pause-DR Exit1-DR Shift-DR Capture-DR R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Instruction Register state TDI Controller state TMS TCK Test Logic (Data Scan) Run-Test/Idle TDO Output Inactive Select-DR-Scan Page 32 of 35 μPD46185092B, μPD46185182B, μPD46185362B Package Dimensions 165-PIN PLASTIC BGA(13x15) ZD w S B E ZE B 11 10 9 8 7 6 5 4 3 2 1 A D R P N M L K J H G F E D C B A w S A INDEX MARK A y1 (UNIT:mm) A2 S S y e S b x A1 M S AB ITEM D DIMENSIONS 13.00±0.10 E 15.00±0.10 w 0.30 A 1.35±0.11 A1 0.37±0.05 A2 0.98 e 1.00 b +0.10 0.50 −0.05 x 0.10 y 0.15 y1 0.25 ZD 1.50 ZE 0.50 T165F1-100-EQ1 R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 33 of 35 μPD46185092B, μPD46185182B, μPD46185362B Recommended Soldering Condition Please consult with our sales offices for soldering conditions of these products. Types of Surface Mount Devices μPD46185092BF1-EQ1 : 165-pin PLASTIC BGA (13 x 15) μPD46185182BF1-EQ1 : 165-pin PLASTIC BGA (13 x 15) μPD46185362BF1-EQ1 : 165-pin PLASTIC BGA (13 x 15) Quality Grade • A quality grade of the products is “Standard”. • Anti-radioactive design is not implemented in the products. • Semiconductor devices have the possibility of unexpected defects by affection of cosmic ray that reach to the ground and so forth. R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Page 34 of 35 μPD46185092B, μPD46185182B, μPD46185362B Revision History Rev. Rev.1.00 Rev.2.00 Date ’12.06.01 ’12.11.09 Page ALL Description Summary New Data Sheet Addition : -E33,-E33Y series, Lead series Deletion : -E50,-E50Y series All trademarks and registered trademarks are the property of their respective owners. C - 35 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 1.1