PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218. PN: CGHV593 50 : 440217 and 440218 Package Type Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Units Output Power 440 445 490 W Gain 10.5 10.5 11 dB 59 54 55 % Drain Efficiency Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm Y 15 - PRELIMINAR Rev 0.0 - May 20 Features • 5.2 - 5.9 GHz Operation • 450 W Typical Output Power • 10.5 dB Power Gain • 55% Typical Drain Efficiency • 50 Ohm Internally Matched • <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 100 µs Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 64 mA 25˚C Maximum Drain Current1 IDMAX 24 A 25˚C Soldering Temperature TS 245 ˚C Screw Torque τ 40 in-oz RθJC 0.31 ˚C/W TC -40, +85 ˚C 2 Pulsed Thermal Resistance, Junction to Case Case Operating Temperature 100 μsec, 10%, 85˚C , PDISS = 320 W Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 64 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 1.0 A Saturated Drain Current IDS 48 57.8 – A Drain-Source Breakdown Voltage VBR 150 – – VDC DC Characteristics1 (TC = 25˚C) 2 VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 64 mA Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics3 (TC = 25˚C, F0 = 5.2 - 5.9 GHz unless otherwise noted) Output Power at 5.2 GHz POUT1 – 440 – W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Output Power at 5.55 GHz POUT2 – 445 – W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Output Power at 5.9 GHz POUT3 – 490 – W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Gain at 5.2 GHz GP1 – 10.5 – dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Gain at 5.55 GHz GP2 – 10.5 – dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Gain at 5.9 GHz GP3 – 11 – dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Drain Efficiency at 5.2 GHz DE1 – 59 – % VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Drain Efficiency at 5.55 GHz DE2 – 54 – % VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Drain Efficiency at 5.9 GHz DE3 – 55 – % VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Small Signal Gain S21 – 15 – dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm Input Return Loss S11 – -7 – dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm Output Return Loss S22 – -11 – dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm D – -0.3 – dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm VSWR – 5:1 – Y Amplitude Droop Output Stress Match No damage at all phase angles, VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Pulsed Notes: 3 Measured in CGHV59350-TB. Pulse Width = 100 μS, Duty Cycle = 10%. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Signal Signal S-Parameters FigureSmall 1. - Small S-Parameters CGHV59350 ininTest CGHV59350 TestFixture Fixture VDD = 50 V, IDQ = 1 A, Tcase = 25 °C VDD = 50 V, IDQ = 1 A, Tcase = 25 °C 20 16 Gain, Return Loss (dB) 12 8 S21 4 S11 0 S22 -4 -8 -12 -16 -20 -24 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 Frequency (GHz) CGHV59350 Pout, DEff, and Gain vs. Frequency at Tcase = 25 °C Figure - CGHV59350 Pout, DEffdBm, , andPulse Gain Width vs. Frequency Tcase = 25=°C VDD 2. = 50 V, IDQ = 1 A, PIN = 46 = 100 µS,at Duty Cycle 10 % VDD = 50V, IDQ=1.0 A, PIN=46 dBm, Pulse Width = 100μS, Duty Cycle = 10% 700 70 60 500 50 Gp 400 300 40 Output Power Output Power POUT Dain Efficiency 30 Gain 200 20 Drain Eff Gain 100 0 Gain (dB) & Drain Efficiency (%) Output Power (W) Drain Efficiency 600 10 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 0 Frequency (GHz) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance CGHV59350 Output Power vs. Input Power VDD = 50 V, IDQ = 1 A, Pulse Width = 100 µS, Duty Cycle = 10 %, Tcase = 25 °C Figure 3. - CGHV59350 Output Power vs. Input Power VDD = 50V, IDQ= 1.0 A, Pulse Width = 100μS, Duty Cycle = 10%, Tcase = 25 °C 58 56 54 Output Power (dBm) Pout 5.2 GHz 52 Pout 5.375 GHz 50 Pout 5.55 GHz 48 Pout 5.725 GHz 46 Pout 5.9 GHz 44 42 40 28 30 32 34 36 38 40 42 44 46 48 Input Power (dBm) CGHV59350 Output Power vs. Input Power VDDFigure = 50 V, 4. IDQ- =CGHV59350 1 A, Pulse Width = 100 µS, Duty Cycle = 10 %, Tcase = 25 °C Output Power vs. Input Power Output Power (dBm) VDD = 50V, IDQ= 1.0 A, Pulse Width = 100μS, Duty Cycle = 10%, Tcase = 25 °C 70 16 60 14 50 12 40 10 30 8 20 10 6 DEff 5.2 GHz DEff 5.375 GHz DEff 5.55 GHz DEff 5.725 GHz DEff 5.9 GHz Gain 5.2 GHz Gain 5.375 GHz Gain 5.55 GHz Gain 5.725 GHz 4 Gain 5.9 GHz 0 28 30 32 34 36 38 40 42 44 46 48 2 Input Power (dBm) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 5. - Output Power vs. Time Output Power vs. time VVDD = 50V, PINPIN =46= dBm, Duty Cycle = 50 V, 46 dBm, Duty Cycle==10% 10 % DD 57.1 57 56.9 25uS 56.8 50uS 56.7 100uS Power (dBm) 56.6 300uS 56.5 500uS 56.4 56.3 56.2 56.1 56 55.9 55.8 55.7 55.6 55.5 -50 0 50 100 150 200 250 300 350 400 450 500 550 Time (uS) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV59350-TB Application Circuit Bill of Materials Designator Description Qty R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 1 R2 RES, 10OHM, +/- 1%, 1/16W,0603 1 C1,C2 CAP, 5.6pF, +/- 0.25 pF,250V, 0603 2 C3,C8 CAP, 20pF, +/- 0.25 pF,250V, 0603 2 C4,C9 CAP, 470PF, 5%, 100V, 0603, X 2 C5 CAP, 0.1MF, 1206, 250 V, X7R 1 L1 IND, FERRITE, 220 OHM, 0603 1 C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C7 CAP, 5.6pF, +/- 0.25 pF,250V, 0603 1 C11 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 C12 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 - PCB, TEST FIXTURE, TACONIC RF35P 20MIL OVER 0.250 COPPER BACK, 2.5 X 3 X 0.26", CGHV59350-TB 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 CGHV59350 1 J1,J2 Q1 CGHV59350 Power Dissipation De-rating Curve CGHV59350 Power Dissipation De-Rating Curve Figure 4. - Transient Power Dissipation De-Rating Curve 350 300 Power Dissipation (W) 250 Note 1 200 150 100 50 0 0 25 50 100 125 150 175 200 250 Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 225 Maximum Case Temperature (°C) 75 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV59350-AMP1 Application Circuit Schematic CGHV59350-AMP1 Application Circuit Outline Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV59350F (Package Type — 440217) Product Dimensions CGHV59350P (Package Type — 440218) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV59350F/P Flange/Pill Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 5.9 GHz 350 W Flange/Pill - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV59350F GaN HEMT Each CGHV59350P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV59350-TB CGHV59350-AMP1 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV59350 Rev 0.0 - PRELIMINARY Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV59350 Rev 0.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf