2SC5851 Silicon NPN Epitaxial REJ03G0761-0100 (Previous ADE-208-1480) Rev.1.00 Aug.10.2005 Features High frequency amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 *CMPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Rev.1.00 Aug 10, 2005 page 1 of 6 Ratings 30 Unit V 30 5 100 150 150 −55 to +125 V V mA mW °C °C 2SC5851 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Notes: 1. The 2SC5851 is grouped by hFE as follows. Grade A B C Mark FA FB FC hFE 35 to 75 60 to 120 100 to 200 Rev.1.00 Aug 10, 2005 page 2 of 6 Min 30 30 5 35 Typ 230 1.6 5.5 Max 0.5 0.5 200 1.1 0.75 Unit V V V µA µA V V MHz pF dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 Ω 2SC5851 Main Characteristics Typical Output Characteristics 10 IC (mA) 150 100 Collector Current Collector Power Dissipation PC* (mW) Maximum Collector Dissipation Curve 50 *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 50 0 100 Ambient Temperature 100 60 6 40 4 20 µA 2 Pulse test 0 150 Ta (°C) 4 16 20 VCE (V) 100 hFE VCE = 6 V Collector Current IC (mA) IB = 0 12 DC Current Transfer Ratio vs. Collector Current 10 DC Current Transfer Ratio 8 6 4 2 0 0.2 0.4 0.6 0.8 80 60 40 20 VCE = 6 V 0 0.1 1.0 Base to Emitter Voltage VBE (V) 3 30 10 IC (mA) 1 0.5 1.0 Collector Current Rev.1.00 Aug 10, 2005 page 3 of 6 2 5 IC (mA) 10 NF (dB) 2 20 Noise Figure 24 VCE = 6 V Rg = 500 Ω f = 1.0 MHz 3 0 0.2 1.0 Noise Figure vs. Collector Current 5 4 0.3 Collector Current Noise Figure vs. Collector Current NF (dB) 8 Collector to Emitter Voltage Typical Transfer Characteristics Noise Figure 80 8 12 VCE = 6 V Rg = 50 Ω f = 100 MHz 16 8 4 0 0.1 0.2 0.5 1.0 Collector Current 2 5 IC (mA) 10 2SC5851 Noise Figure vs. Signal Source Resistance Gain Bandwidth Product vs. Collector Current 6 fT (MHz) NF (dB) 10 Noise Figure 12 VCE = 6 V IC = 1 mA f = 100 MHz Gain Bandwidth Product 8 4 2 0 10 20 50 100 200 500 1000 500 VCE = 6 V 400 300 200 100 0 0.1 0.3 Signal Source Resistance Rg (Ω) 300 200 100 0 20 Collector to Emitter Voltage 20 Percentage of Relative to VCE = 6 V (%) fT (MHz) Gain Bandwidth Product IC = 1 mA 5 boe 200 gie 100 bie Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IC = 1 mA (%) goe bie 100 boe boe bie 50 gie 20 goe 10 0.1 0.2 0.5 1.0 Collector Current Rev.1.00 Aug 10, 2005 page 4 of 6 2 IC (mA) goe gie 50 bie boe 20 10 1 2 5 10 20 50 VCE (V) Transfer Admittance vs. Collector to Emitter Voltage 500 200 IC = 1 mA f = 100 MHz goe Collector to Emitter Voltage VCE (V) gie IC (mA) 500 Input/Output Admittance vs. Collector Current VCE = 6 V f = 100 MHz 30 10 Input/Output Admittance vs. Collector to Emitter Voltage 400 2 3 Collector Current Gain Bandwidth Product vs. Collector to Emitter Voltage 1 1.0 5 500 IC = 1 mA f = 100 MHz 200 bre gfe 100 bfe gfe bfe bre 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC5851 Percentage of Relative to IC = 1 mA (%) Transfer Admittance vs. Collector Current 500 VCE = 6 V f = 100 MHz bfe 200 100 gfe bre bre 50 gfe 20 10 0.1 bfe 0.2 0.5 1.0 Collector Current Rev.1.00 Aug 10, 2005 page 5 of 6 2 IC (mA) 5 2SC5851 Package Dimensions JEITA Package Code RENESAS Code SC-70 Package Name PTSP0003ZA-A D MASS[Typ.] CMPAK / CMPAKV 0.006g A e Q c E HE LP L A A x M L1 S A3 Reference Symbol b A e A2 A A1 S e1 b b1 l1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.3 0.13 0.11 2.0 1.25 0.65 2.1 Max 1.1 0.1 1.0 0.4 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.45 1.5 0.9 0.2 Ordering Information Part Name 2SC5851FATL-E 2SC5851FBTL-E 2SC5851FCTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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