Preliminary RJK0629DPK N Channel Power MOS FET High-Speed Switching Use REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Features • VDSS: 60 V • RDS(on): 4.5 mΩ (Max) • ID: 100 A Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 2 D 1. Gate 2. Drain (Flange) 3. Source 1G S 3 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Tch ≤ 150°C 2. STch = 25°C, Tch ≤ 150°C, L = 100 μH 3. Value at Tc = 25°C REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 1 of 6 Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 Pch Note3 θch-c Tch Tstg Value 60 ±20 85 340 85 340 55 100 1.25 150 –55 to +150 Unit V V A A A A A W °C/W °C °C RJK0629DPK Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) VDS(on) Static drain to source on state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) Min 60 ±20 — — 1.0 — — — — — — — — — — — — tf VDF trr — — — Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 2 of 6 Typ — — — — — 161 3.75 4.9 4100 1000 780 85 11 25 20 40 100 Max — — 1 ±10 2.0 194 4.5 6.6 — — — — — — — — — Unit V V μA μA V mV mΩ mΩ pF pF pF nC nC nC ns ns ns 40 0.92 50 — 1.2 — ns V ns Test Conditions ID = 100 μA, VGS = 0 IG = ±100 μA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7 Ω IF = 85 A, VGS = 0 Note4 IF = 85 A, VGS = 0, diF/dt = 100 A/μs RJK0629DPK Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ion ID (A) 50 100 150 Case Temperature 0.1 0.01 0.1 200 Tc (°C) 3V 80 60 VGS = 2.7 V 40 20 VDS (V) Tc = 175°C Tc = 25°C Pulse Test 0 5 ID = 43 A Pulse Test 15 Tc = 175°C 25°C 5 −40°C 0 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 3 of 6 −40°C 0.1 0.01 VDS = 10 V Pulse Test 1 2 3 4 Gate to Source Voltage 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 20 25°C 1 VDS (V) Static Drain to Source on State Resistance vs. Gate to Source Voltage 10 10 0.001 0 10 Drain to Source Voltage 4 100 100 10 V 5V 0 10 Typical Transfer Characteristics Drain Current ID (A) 100 1 Drain to Source Voltage Typical Output Characteristics Drain Current ID (A) at limited by RDS(on) Tc = 25°C 1 shot Pulse 0 Drain to Source on State Resistance RDS (on) (mΩ) er s m 1 this area is 10 Operation in Op Drain Current μs μs = Channel Dissipation 10 0 s m DC 50 10 PW 100 100 10 150 1 Pch (W) 200 100 Tc = 25°C Pulse Test 10 VGS = 4.5 V 10 V 1 1 100 10 Drain Current ID (A) Preliminary Static Drain to Source on State Resistance vs. Temperature 10000 Pulse Test ID = 43 A Ciss Capacitance C (pF) 16 12 VGS = 4.5 V 8 4 10 V 50 30 0 50 100 150 Tc = 25°C VGS = 0 f = 1 MHz 5 10 15 20 25 30 Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 VGS 16 12 20 8 VDD = 25 V 10 V 5V 10 40 80 4 120 160 0 200 Maximum Avalanche Energy vs. Channel Temperature Derating 500 IAP = 55 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 400 300 200 100 50 75 100 125 150 175 Channel Temperature Tch (°C) REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 4 of 6 100 Tc = 25°C Pulse Test 10 V 80 60 40 VGS = 0, −5 V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nC) Repetitive Avalanche Energy EAR (mJ) Crss 300 Drain to Source Voltage VDS (V) VDS 0 25 Coss 0 200 VDD = 25 V 10 V 5V 0 1000 Case Temperature Tc (°C) Tc = 25°C ID = 85 A 40 3000 100 0 −50 Reverse Drain Current IDR (A) 20 Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS(on) (mΩ) RJK0629DPK Preliminary Normalized Transient Thermal Impedance γs (t) RJK0629DPK Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – c(t) = γs (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.05 0.01 0.02 0.01 10 μ 1 sh p ot 100 μ uls e PDM D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 EAR = L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V (BR)DSS Rg IAP VDD D. U. T VDS Vin 15 V ID 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 30 V 90% td(on) REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 5 of 6 tr 90% td(off) tf RJK0629DPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJK0629DPK-00-T0 Quantity 360 pcs REJ03G1875-0100 Rev.1.00 Dec 15, 2009 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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