SS2509-R

SS2509-R
Hall Latch - High Sensitivity
Packages
Features and Benefits
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3 pin TSOT23 (suffix ST)
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–
–
–
–
–
–
–
3 pin SIP (suffix UA)
Functional Block Diagram
Application Examples
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–
–
–
–
–
–
VDD
Voltage
Regulator
Rpull
Wide operating voltage range from 3.5V to
24V
High magnetic sensitivity
CMOS technology
Low current consumption
Chopper-stabilized amplifier stage
Output driver with internal pull-up resistor
Superior temperature stability
Insensitive to physical stress
TSOT23 3L or flat SIP 3L
both RoHS Compliant packages
OUT
Chopper
Hall
Plate
Automotive, Consumer and Industrial
Solid-state switch
Brushless DC motor commutation
Speed detection
Angular position detection
Linear position detection
Proximity detection
General Description
GND
UA Package
Pin 1 – VDD
Pin 2 – GND
Pin 3 – OUT
The SS2509-R is a bipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. The
device integrates a voltage regulator, Hall sensor with
dynamic offset cancellation system, Schmitt trigger
and an output driver with internal pull-up resistor, all
in a single package.
SO Package
Pin 1 – VDD
Pin 2 – OUT
Pin 3 – GND
It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points.
There are many applications for this HED – Hall Electronic Device - in addition to those listed above. The design,
specifications and performance have been optimized for commutation applications in 5V and 12V brushless DC
motors.
Thanks to its wide operating voltage range and extended choice of temperature range, it is quite suitable for use in
automotive, industrial and consumer applications.
The device is delivered in a Thin Small Outline Transistor (TSOT) for surface mount process or in a Plastic Single
In Line (SIP 3L flat) for through- hole mount. Both 3-lead packages are RoHS compliant.
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Hall Latch - High Sensitivity
Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
BLDC
Operating Point (BOP)
Release Point (BRP)
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) - also referred with the package
code “ST”
Electro-Static Discharge
Brush-Less Direct-Current
Magnetic flux density applied on the branded side of the package which turns the
output
driver ON (VOUT = VDSon)
Magnetic flux density applied on the branded side of the package which turns the
output
driver OFF (VOUT = high)
Unique Features
Based on mixed signal CMOS technology, SS2509-R is a Hall-effect device with high magnetic sensitivity. This
multi-purpose latch meets most of the application requirements.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with
Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to
smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important
factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics
and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating temperature
range according to “L”, and “E” specification make this device suitable for automotive, industrial and consumer
applications.
Pin Definitions and Descriptions
TSOT Pin
SIP Pin №
№
1
1
2
3
3
2
Name
Type
Function
VDD
OUT
GND
Supply
Output
Ground
Supply Voltage pin
Open Drain Output pin
Ground pin
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Hall Latch - High Sensitivity
Absolute Maximum Ratings
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Storage Temperature Range
Maximum Junction Temperature
Symbol
VDD
IDD
VOUT
IOUT
TS
TJ
Value
28
50
28
50
-50 to 150
165
Units
V
mA
V
mA
°C
°C
Operating Temperature Range
Temperature Suffix “E”
Temperature Suffix “L”
Symbol
TA
TA
Value
-40 to 85
-40 to 150
Units
°C
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
General Electrical Specifications
DC Operating Parameters TA = 25°C, VDD= 3.5V to 24V (unless otherwise specified)
Parameter
Symbol
Supply Voltage
Supply Current
Output Saturation Voltage
Output Leakage Current
Output Rise Time
Output Fall Time
Internal pull-up resistor
Maximum Switching Frequency
Package Thermal Resistance
VDD
IDD
VDSon
IOFF
tr
tf
Rpu
FSW
RTH
Test Conditions
Min
Operating
B < BRP
IOUT = 20mA, B > BOP
B < BRP VOUT = 24V
RL = 1kΩ, CL = 20pF
RL = 1kΩ, CL = 20pF
----Single layer (1S) Jedec board
3.5
Typ
Max
Units
24
5
0.5
10
V
mA
V
µA
µs
µs
kΩ
KHz
°C/W
1
0.25
0.25
12
10
301
9
15
Note: The output of SS2509-R will be switched after the supply voltage is over 2.2V, but the magnetic characteristics won't be
normal until the supply is over 3.5V.
Magnetic Specifications
DC Operating Parameters VDD = 3.5 to 24V (unless otherwise specified)
Package
Parameter
Symbol
Operating Point
BOP
Test Conditions
Min
Typ
Max
Units
-40
-23
-5
G
5
23
40
G
Ta=25°C
UA
Release Point
BRP
Hysteresis
BHYST
Operating Point
BOP
Vdd=5V DC
45
G
5
23
40
G
-40
-23
-5
G
Ta=25°C
ST
Release Point
Hysteresis
BRP
Vdd=5V DC
BHYST
45
3
G
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SS2509-R
Hall Latch - High Sensitivity
Output Behavior versus Magnetic Pole
DC Operating Parameters TA = -40°C to 150°C, VDD = 3.5 to 24V (unless otherwise specified)
Test Conditions (UA)
Test Conditions (ST)
OUT
B > BRP
B < BRP
High
B < BOP
B > BOP
Low
The TSOT-23 device is reversed from the UA package. The TSOT-23 output transistor will be turned on(drops low) in the presence of a
sufficiently strong South pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently
strong North pole magnetic field.
Detailed General Description
The SS2509-R exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles
to operate properly.
In the case of UA package,the OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor reduced below the operate point threshold, BOP. After turn-on, the output voltage is VDSon.
Note that the device latches, that is, a north pole of sufficient strength towards the branded surface of the device
turns the device on. The device remains on if the south pole is removed (B→0). This latching property defines the
device as a magnetic memory.
When the magnetic field exceeds the release point, BRP, the OUT pin turns off (goes high). The difference in the
magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external
Output level
Output level
OUT = High
OUT = High
BHYST
BHYST
OUT = Low
BRP
23Gs typ
0mT
BOP
-23Gs typ
OUT = Low
BRP
-23Gs typ
Flux density
UA package - Latch characteristic
0mT
BOP
23Gs typ
Flux density
ST package - Latch characteristic
mechanical vibration and electrical noise.
The device behaves as a latch with symmetric operating and release switching points (|BOP|=BRP). This means
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Hall Latch - High Sensitivity
magnetic fields with equivalent strength and opposite direction drive the output high and low.
Powering-on the device in the hysteresis region (higher than BOP and less than BRP) allows an indeterminate output
state. The correct state is attained after the first excursion beyond BOP or BRP.
The TSOT-23 device is reversed from the UA package. The TSOT-23 output transistor will be latched on in the
presence of a sufficiently strong South pole magnetic field applied to the marked face.
Application Information
It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall sensor)
between the supply (VDD Pin) and ground (GND Pin) of the device to reduce both external noise and noise generated by the chopper stabilization technique. As is shown in the two figures in next page, a 0.1μF capacitor is typical.
For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When
using a resistor, three points are important:
- the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA)
- the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1*IDD)
- the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2/R1)
When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V).
Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both
solutions provide the required reverse voltage protection.
When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that the second following figure is used.
The low-pass filter formed by R1 and C1 and the Zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection.
Automotive and Severe Environment Protection Circuit
Typical Three-Wire Application Circuit
R1:100
C1
VDD
R2
D1
OUT
SS2509-R
Z1
C1
VDD
SS2509-R
R2
OUT
C2
C2
GND
GND
The SS2509-R have been optimized for commutation applications in 5V and 12V brushless DC motors. The follow figure is the typical application circuit for 3 phase brushless DC motors.
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SS2509-R
Hall Latch - High Sensitivity
Standard information regarding manufacturability of Hall IC with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity
level according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
•
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
•
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
•
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
•
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
•
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
•
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
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Hall Latch - High Sensitivity
Package Information
2.13
1.87
0.75 ± 0.05
1.52 ± 0.1
Package UA, 3-Pin SIP:
3° ± 1°
1.00
1.20
45° ± 1°
4.0 ± 0.01
1
2
3
3.0 ± 0.01
Sensor Location
Active Area Depth:
0.84(Nom)
3° ± 1°
6° ± 1°
3° ± 1°
6° ± 1°
1
2
0.05 ± 0.05
3
1.6.± 0.1
0.44± 0.01
0.38 ± 0.01
14 .5 ± 1
0.39± 0.01
Notes:
1). Controlling dimension : mm ;
2). Leads must be free of flash and plating voids ;
3). Do not bend leads within 1 mm of lead to package
interface ;
4). PINOUT: Pin 1 VDD
Pin 2 GND
Pin 3 Output
1.27
2.54
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Hall Latch - High Sensitivity
Package ST, 3-Pin TSOT-23:
Notes
1). PINOUT:
Top
3
2.65
1.60 2.95
1.70
1
Pin 1 VDD
Pin 2 Output
Pin 3 GND
2). All dimensions are in millimeters;
2
1.70
2.10
Side Vie
End
2.82
3.02
0.08
0.20
0.70
0.90
0.70
0.80
0.20
Min
0.00
0.10
0.35
0.50
TSOT-23 Package Hall Location:
Bottom View of TSOT-23 Package
3
Chip
0.36
0.46
0.95
2
1
1.50
Ordering Information
Part No.
Pb-free
Temperature Code
Package Code
Packing
SS2509-RESTT
YES
-40°C to 85°C
TSOT-23
7-in. reel, 3000 pieces/reel
SS2509-REUA
YES
-40°C to 85°C
TO-92
Bulk, 1000 pieces/bag
SS2509-RKSTT
YES
-40°C to 125°C
TSOT-23
7-in. reel, 3000 pieces/reel
SS2509-RKUA
YES
-40°C to 125°C
TO-92
Bulk, 1000 pieces/bag
SS2509-RLSTT
YES
-40°C to 150°C
TSOT-23
7-in. reel, 3000 pieces/reel
SS2509-RLUA
YES
-40°C to 150°C
TO-92
Bulk, 1000 pieces/bag
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