RENESAS HRV103A_08

HRV103A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0398-0300
Rev.3.00
Mar 25, 2008
Features
• Low forward voltage drop and suitable for high efficiency rectifying.
• Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Part No.
HRV103A
Laser Mark
S1
Package Name
TURP
Pin Arrangement
Cathode mark
Mark
1
S1
2
1. Cathode
2. Anode
REJ03G0398-0300 Rev.3.00 Mar 25, 2008
Page 1 of 5
Package Code
PUSF0002ZC-A
HRV103A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
Value
30
30
1
5
125
–55 to +125
VRRM
VR
IO *2
IFSM *1
Tj
Tstg
Unit
V
V
A
A
°C
°C
Notes: 1. 10 ms sine wave 1 pulse
2. Ta = 44°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm)
Short form wave (θ180°C), VR = 10 V.
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
VF1
VF2
VF3
Reverse current
IR1
IR2
C
Rth(j-a)
Capacitance
Thermal resistance
Min
—
—
Typ
—
—
Max
0.27
0.36
—
—
—
—
—
—
—
—
—
—
100
200
0.42
100
1000
40
—
—
Unit
V
μA
pF
°C/W
Test Condition
IF = 100 mA
IF = 700 mA
IF = 1 A
VR = 5 V
VR = 30 V
VR = 10 V, f = 1 MHz
Ceramics board *1
Glass epoxy board *2
Notes: 1. Ceramics board
2.0
50h × 50w × 0.8t
0.5
2.0
0.3
2.0
Unit: mm
1.0
2. Glass epoxy board
6.0
50h × 50w × 0.8t
0.5
6.0
0.3
2.0
Unit: mm
1.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
REJ03G0398-0300 Rev.3.00 Mar 25, 2008
Page 2 of 5
HRV103A
Main Characteristics
10–1
1.0
Ta = 75°C
Pulse test
Ta = 25°C
10–2
Reverse current IR (A)
Forward current IF (A)
10–1
Pulse test
10–2
10–3
10–4
0
0.2
0.4
0.6
0.8
1.0
Ta = 25°C
10–4
10–6
0
10
20
30
40
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f=1MHz
Pulse test
100
Capacitance C (pF)
10–3
10–5
10–5
10–6
Ta = 75°C
10
1.0
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
REJ03G0398-0300 Rev.3.00 Mar 25, 2008
Page 3 of 5
HRV103A
8
0.8
0.7
0A
D=1/6
t
T
0.6
Ta = 25°C
sin
D=1/3
0.5
D=1/2
0.4
DC
0.3
0.2
0.1
0
0
0.5
1.0
1.5
D=5/6
7
6
t
T
t
D=—
T
D=2/3
Tj = 125°C
5
D=1/2
4
sin
3
2
1
0
0
10
20
30
40
Forward current IF (A)
Reverse voltage VR (V)
Fig.4 Forward power dissipation vs. Forward current
Fig.5 Reverse power dissipation vs. Reverse voltage
1.2
Average rectified current IO (A)
t
D=—
T
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0V
1.0
VR=VRRM/3
Tj =125°C
Rth(j−a)=100°C/W
DC
0.8
sin(θ=180°)
0.6
D=1/2
D=1/3
D=1/6
0.4
0.2
0
−25
0
25
50
75
100
125
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
REJ03G0398-0300 Rev.3.00 Mar 25, 2008
Page 4 of 5
HRV103A
Package Dimensions
Package Name
TURP
JEITA Package Code
⎯
RENESAS Code
PUSF0002ZC-A
Previous Code
TURP/TURPV
MASS[Typ.]
0.004g
D
b
b
Lp1
E
HE
Lp2
c
b1
b1
b2
Reference
Symbol
l1
A
e1
l2
b3
Pattern of terminal position areas
REJ03G0398-0300 Rev.3.00 Mar 25, 2008
Page 5 of 5
A
b
b1
c
D
E
HE
Lp1
Lp2
b2
b3
e1
l1
l2
Dimension in Millimeters
Min
Nom
0.55
0.75
0.08
1.15
1.80
2.40
0.40
1.30
0.60
0.80
0.13
1.25
1.90
2.50
0.50
1.40
0.8
1.1
0.5
0.8
2.0
Max
0.55
0.65
0.85
0.18
1.45
2.00
2.60
0.60
1.50
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