SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1) BVCES < 80V (Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A W °C °C (1) Emitter (2) Base (3) Collector All terminals have same dimensions MMSTA28 (1) (2) 0.2 1.6 + −0.1 0~0.1 (3) ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.3Min. Limits 80 80 12 0.3 0.2 150 −55 to +150 0.2Min. +0.1 0.15 −0.06 0.4 +0.1 −0.05 zAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg 0~0.1 (3) ROHM : SST3 JEDEC : SOT-23 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 0.45±0.1 (2) 0.2 1.3 + −0.1 (1) 2.4±0.2 SSTA28 SST3 RAT T116 3000 0.95 0.95 2.8±0.2 Part No. Packaging type Marking Code Basic ordering unit (pieces) 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking and packaging specifications (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCES BVEBO ICBO Min. 80 80 12 − Typ. − − − − Max. − 0.1 Unit V V V µA IBEO − − ICES − − 0.1 0.5 µA µA Conditions IC = 100µA IC = 100µA IE = 10µA VCB = 60V VEB = 10V VCE = 10V VCE(sat) 1 − 0.7 1.2 V IC/IB = 10mA/10µA VCE(sat) 2 − 0.8 1.5 V IC/IB = 100mA/0.1mA VBE(on) − 10000 10000 1.4 2.0 − − − 8.0 V VCE/IB = 5V/100mA − VCE = 5V , IC = 10mA VCE = 5V , IC = 100mA VCE = 5V , IE = 10mA , f = 100MHz DC current transfer ratio hFE Transition frequency fT COb Output Capecitance − − 125 − − 200 − 5.0 MHz pF VCB = 10V , IE = 0 , f = 1MHz 1/2 SSTA28 / MMSTA28 Transistors zElectrical characteristic curves 100 50 45 40 35 30 25 20 15 300 250 10 200 5 150 100 50 0 70 0.8 50 30 hFE-DC CURRENT GAIN 25°C 50k −40°C 20k 10k 5k 2k 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Ic/IB=1000 1.6 1.4 1.2 1.0 Ta= −40°C 0.8 25°C 0.6 125°C 0.4 0.2 0 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) 100 f=1MHz Ta=25°C 50 1.8 Ta= −40°C 25°C 1.2 1.0 125°C 20 10 5 Cib 0.8 2 0.6 0.4 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.7 Base emitter "ON" voltage vs collector current 5k 1 2 1 0.5 Cob 1 2 5 10 20 REVERSE BIAS VOLTAGE (V) 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current ( ΙΙ ) 2.2 Ic/IB=1000 2.0 1.8 Ta= −40°C 1.6 1.4 25°C 1.2 1.0 125°C 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.6 Base emitter saturation voltage vs collector current Fig.5 Collecor emitter saturation voltage vs collector current VCE=5V 1.4 1V 10k 2k 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.8 CAPACITANCE (pF) VBE(ON) BASE EMITTER VOLTAGE (V) IB=0µA 0 Fig.2 Typical output characteristics 2.0 1.6 3V 20k VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.4 DC current gain vs. collector current 2.2 VCE=5V 50k 0.2 10 0 VCE(SAT) COLLECTOR EMITTER SATURATION VOLTAGE (V) 100k 0.4 20 Fig.1 Grounded emitter output characteristics VCE=5V 0.6 40 VCE-COLLECTOR-EMITTER VOLTAGE (V) Ta=25°C 1.0 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 200k 1.2 80 IB=0µA 0 Ta=25°C 100k VCE(SAT) COLLECTOR EMITTER SATURATION VOLTAGE (V) 350 200k Ta=25°C 1.4 50 Fig.8 Capacitance vs reverse bias voltage 1000 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 400 1.6 90 hFE-DC CURRENT GAIN Ta=25°C 450 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) 500 Ta=25°C VCE=10V 500 200 100 50 20 10 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.9 Current gain-bandwdth product vs collector current 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0