BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol BCV27 BCV47 BCV27 BCV47 Value 40 80 30 60 VCBO VCEO Emitter Base Voltage Unit V V VEBO 10 V Collector Current IC 500 mA Peak Collector Current ICM 800 mA Base Current IB 100 mA Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 30 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On-state Voltage at IC = 10 mA, VCE = 5 V Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz C C Symbol Min. Typ. Max. Unit BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 hFE hFE hFE hFE hFE hFE 4000 2000 10000 4000 20000 10000 - - - BCV27 BCV47 ICBO - - 100 100 nA IEBO - - 100 nA BCV27 V BCV47 (BR)CBO BCV27 V BCV47 (BR)CEO 40 80 30 60 - - V - - V V(BR)EBO 10 - - V VCE(sat) - - 1 V VBE(sat) - - 1.5 V VBE(on) - - 1.4 V fT - 220 - MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 BCV27 / BCV47 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01