BAS40E / -04E / -05E / -06E SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low forward voltage • Fast switching BAS40E BAS40-04E BAS40-05E 3 3 3 1 2 1 1 2 BAS40-06E 3 2 1 BAS40E Marking Code: 43 BAS40-04E Marking Code: 44 BAS40-05E Marking Code: 45 BAS40-06E Marking Code: 46 2 Absolute Maximum Ratings (Ta = 25℃) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Peak Forward Surge Current (at tp ≤ 8.3 ms) M E Power Disspation Junction Temperature Storage Temperature Range S Characteristics at Ta = 25℃ Parameter Forward Voltage at IF = 1 mA at IF = 40 mA Symbol Unit 40 V 40 V 200 mA 600 mA 150 mW 150 ℃ - 65 to + 150 ℃ E T VRRM VR IF IFSM Pd TJ TStg H C Value Symbol Min. Max. Unit VF VF - 0.38 1 V V V(BR)R 40 - V IR - 200 nA CT - 5 pF trr - 5 ns Reverse Breakdown Voltage at IR = 10 μA Reverse Current at VR = 30 V Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 IR SEMTECH ELECTRONICS LTD. ® Dated: 25/11/2013 Rev: 01 BAS40E / -04E / -05E / -06E E T H C Power Dissipation vs Ambient Temperature M E S Power Dissipation: Ptot (mW) 150 125 100 75 50 25 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated: 25/11/2013 Rev: 01