ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Current (Pulse) ICP Base Current E T IB Power Dissipation (Ta = 25 OC) Power Dissipation (Tc = 25 OC) Junction Temperature M E Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 3 V, IC = 0.5 A at VCE = 3 V, IC = 3 A Collector Base Cutoff Current at VCB = 100 V Collector Emitter Cutoff Current at VCE = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Sustaining Voltage at IC = 30 mA Collector Emitter Saturation Voltage at IC = 3 A, IB = 12 mA Collector Emitter Saturation Voltage at IC = 5 A, IB = 20 mA Base Emitter On Voltage at VCE = 3 V, IC = 3 A S Value PC PC Tj Tstg Unit H C 100 V 100 V 5 V 5 A 8 A 0.12 A 2 W 65 W 150 O C - 65 to + 150 O C Symbol Min. Max. Unit hFE hFE 1000 1000 - - ICBO - 0.2 mA ICEO - 0.5 mA IEBO - 2 mA VCEO(sus) 100 - V VCE(sat) - 2 V VCE(sat) - 4 V VBE(on) - 2.5 V SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：15/12/2011 Rev：01 ST TIP122 M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：15/12/2011 Rev：01 ST TIP122 TO-220 PACKAGE OUTLINE M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：15/12/2011 Rev：01