S1A THRU S1M (DO-214AC) SURFACE MOUNT RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Glass passivated chip junction • For surface mount application • Low profile package • Built-in strain relief, ideal for automated placement Mechanical Data • Case: JEDEC DO-214AC, molded plastic over passivated chip • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • High temperature solder: 250℃/10 seconds at terminals • Polarity: Color band denotes cathode end Absolute Maximum Ratings and Characteristics Ratings at 25oC ambient temperature unless otherwise specified. Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL = 110 OC IFSM Maximum Instantaneous forward voltage at 1.0A VF Maximum DC reverse current at TA = 25℃ IR at rated DC blocking voltage at TA = 125℃ IR 50 Ctot 12 pF trr 1.8 μs Typical Junction Capacitance at VR = 4.0 V, f = 1 MHZ Typical Reverse Recovery Time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical thermal resistance (Note 1) Operating junction and storage temperature range 1.0 A 40 30 1.1 V 1.0 5.0 RθJA 75 85 RθJL 27 30 TJ ,TS A μA O O -55 to +150 Notes: 1. Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 ×0.2” (5.0 ×5.0mm2) copper pad areas SEMTECH ELECTRONICS LTD. ® C/W (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2005 C S1A THRU S1M (DO-214AC) FIG.2- PEAK FORWARD SURGE CURRENT FIG.1-FORWARD DERATING CURVE AVERAGE FORWARD CURRENT, A RESISTIVE OR INDUCTIVE LOAD 1 0.8 0.6 S1(A.J) 0.4 S1(K.M) 0.2x0.2(5.0x5.0mm) Thick copper pad areas 0.2 0 0 20 40 60 80 120 140 100 160 PEAK FORWARD SURGE CURRENT, A 100 1.2 TL=110 C 8.3ms Single half Sine Wave (JEDEC Method) S1(A.J) 10 S1(K.M) 1 1 LEAD TEMPERATURE, ( C) 100 10 NUMBER OF CYCLES AT 60Hz FIG.3-TYPICAL FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS 10 1 o TJ =25 C PULSE WIDTH=300 s 1% DUTY CYCLE 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 INSTANTANEOUS REVERSE CURRENT( A) INSTANTANEOUS FORWARD CURRENT(A) 100 2.0 10 TJ=125 C 1 TJ=75 C 0.1 TJ=25 C 0.01 INSTANTANEOUS FORWARD VOLTAGE (V) 0.001 0 FIG.5- TYPICAL JUNCTION CAPACITANCE 1 0.01 0.1 1 REVERSE VOLTAGE, V 10 100 TRANSIENT THERMAL IMPEDANCE ( oC/W) JUNCTION CAPACITANCE, pF 10 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTS,% 100 TJ=25 C f=1.0MHz Vsig=50mVp-p 20 FIG.6- TRANSIENT THERMAL IMPEDANCE 1000 S1(K.M) 100 S1(A.J) 10 1 0.01 0.1 1 10 100 t, PULSE DURATION SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2005