1N4148 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4148. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 IFSM 500 Rectified Current (Average) Half Wave Rectification with Resist. Load o at Tamb = 25 C and f50 HZ o Surge Forward Current at t<1s and Tj = 25 C Power Dissipation Junction Temperature Storage Temperature Range 1) 1) 1) mA mA Ptot 500 Tj 200 O -65 to +200 O TS mW C C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 1N4148 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1 V IR IR IR - - 25 5 50 nA µA µA V(BR)R V(BR)R 100 75 - - V V Capacitance at VF = VR = 0 Ctot - - 4 pF Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time<30ns, fp = 5 to 100 kHz Vfr - - 2.5 V Reverse Recovery Time from IF = 10mA to IR = 1mA, VR = 6V, RL = 100Ω trr - - 4 ns Thermal Resistance Junction to Ambient Air RthA - - 0.351) K/mW Rectification Efficiency at f = 100MHz, VRF = 2V ηv 0.45 - - - Forward Voltage at IF = 10mA Leakage Current at VR = 20V at VR = 75V at VR = 20V, Tj = 150oC Reverse Breakdown Voltage at IR = 100μA at IR = 5.0μA Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 1N4148 Dynamic forward resistance versus forward current Forward characteristics mA 10 1N 4148 1N 4148 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 1N 4148 1N 4148 Tj=25 oC f=1MHz 900 1.1 800 P tot 10 2 mA 10 Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 100 0.7 0 0 o 200 C 100 0 0 2 Tamb 4 6 8 10 V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004 1N4148 Leakage current versus junction temperature nA 10 4 1N 4148 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duration A 100 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N 4148 v=tp/T I 5 4 3 IFRM 2 tp 10 IFRM T=1/fp t v=0 T 5 4 3 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/07/2004