1N5817WB~1N5819WB

1N5817WB~1N5819WB
1 A Surface Mount Schottky Barrier Diode
PINNING
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
Top View
Marking Code: 1N5817WB: A0
1N5818WB: ME
1N5819WB: SR
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
VR
20
30
40
V
Average Forward Rectified Current
IF(AV)
1
A
Non-Repetitive Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
IFSM
9
A
Power Dissipation
Ptot
450
mW
Tj
- 55 to + 125
O
Tstg
- 55 to + 125
O
1N5817WB
1N5818WB
1N5819WB
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 1 mA
Forward Voltage
at IF = 0.1 A
at IF = 1 A
at IF = 3 A
Reverse Current
at VR = 20 V
at VR = 30 V
at VR = 40 V
at VR = 4 V
at VR = 6 V
Total Capacitance
at VR = 4 V, f = 1 MHz
Symbol
Min.
Max.
20
30
40
-
-
0.45
0.45
0.55
0.6
1N5817WB
1N5818WB
1N5819WB
-
0.75
0.875
0.9
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5819WB
-
1
1
1
0.05
0.075
-
120
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
V(BR)R
VF
IR
Ctot
Unit
V
V
mA
pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:13/02/2012 Rev:02
1N5817WB~1N5819WB
Fig.3 Typical Safe Operating Area
Fig.4 Typical Reverse Characteristic
Fig.5 Typical Total Capacitance
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:13/02/2012 Rev:02
1N5817WB~1N5819WB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
∠ ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.85
3.55
0.2
5
O
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:13/02/2012 Rev:02