MMBT8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation Ptot 350 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 800 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Voltage at -VCE = 1 V, -IC = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA MMBT8550C MMBT8550D C C Symbol Min. Max. Unit hFE hFE hFE 100 160 40 250 400 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 25 - V -V(BR)EBO 6 - V -VCE(sat) - 0.5 V -VBE(sat) - 1.2 V -VBE(on) - 1 V fT 120 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/04/2008 MMBT8550 (1.5A) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/04/2008