ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 20 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 2 A Peak Collector Current (PW = 10 ms) -ICP 5 A Power Dissipation Ptot 400 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 100 mA Current Gain Group Collector Base Cutoff Current at -VCB = 20 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 0.1 A Transition Frequency at -VCE = 2 V, IE = 500 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE 120 180 - 270 390 - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 20 - - V -V(BR)CEO 20 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V fT - 240 - MHz Cob - 35 - pF Q R SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 28/07/2006 ST 2SA1585 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 28/07/2006