LLDB3, LLDB4 Silicon Bidirectional Trigger Diodes These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. LL-34 1.45±0.05 3.5±0.1 0.3±0.1 Glass Case Mini MELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation (Ta = 65 OC) Ptot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) ITRM 2 A Tj, Tstg - 40 to + 125 Operating Junction and Storage Temperature Range C O Characteristics at Ta = 25 OC Parameter Breakover Voltage at C = 22 nF, see diagram 1 Symbol Min. Max. 28 36 35 45 [|+VBO|-|-VBO|] - 3 V | ΔV ± | 5 - V Output Voltage See diagram 2 VO 5 - V Breakover Current at C = 22 nF IBO - 50 µA Leakage Current at VB = 0.5 VBO max IB - 10 µA Rise Time See diagram 3 tr - 2 µs LLDB3 LLDB4 Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at ΔI = [IBO to IF = 10 mA] VBO SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/08/2009 Unit V LLDB3, LLDB4 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/08/2009