KSH5027AF

KSH5027AF
KSH5027AF
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡
KSH5027AF
KSH5027AF
High Voltage and High Reliability
- High Speed Switching
- Wide SOA
Absolute Maximum Ratings
TC=25୅ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
1100
800
7
3
10
1.5
40
150
-55~150
V
V
V
A
A
A
W
୅
୅
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25୅)
Junction Temperature
Storage Temperature
Electrical Characteristics (1)
CHARACTERISTICS
3 Amperes
NPN Silicon Power Transistor
40 Watts
TO-220F
1. Base
2. Collector
3. Emitter
12
3
TC=25୅ unless otherwise noted
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC=1mA, IE=0
1100
V
Collector-Emitter Breakdown Voltage
VCEO
IC=5mA, IB=0
800
V
Emitter-Base Breakdown Voltage
VEBO
IE=1mA, IE=0
7
V
800
V
Collector-Emitter Sustaining Voltage
ICEX(sus)
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
Collector Cut0off Current
ICBO
VCB=800V,IE=0
10
ᒺ
Emitter Cutoff Current
IEBO
VEB=5V,IC=0
10
ᒺ
DC Current Gain
hFE1
hFE2
VCE=5V,IC=0.2A
VCE=5V,IC=1A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1.5A,IB=0.3A
2
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1.5A,IB=0.3A
1.5
V
Output Capacitance
Cob
10
8
VCB=10V,IE=0, f=0.1MHz
60
ᓂ
15
ᓊ
Current Gain Bandwidth Product
fT
VCE=10V,IC=0.2A
Turn on Time
ton
Storage Time
tstg
Vcc=400V, Ic=5A
IB1=-2.5A, IB2=2A
RL=200ȍ
(Note 2 )
Fall Time
tf
40
0.5
ᓪ
3.0
ᓪ
0.3
ᓪ
Notes ;
1. Pulse Test: Pulse Width”ȝV'XW\&\FOH”
2. Final Test Condition : UI9600, Vcc=5V, Ic=0.5A ( tstg Class = A : 3.0~4.0, B : 4.0~5.0, C : 5.0~6.0 )
hFE1
Classification
R
15 ~ 30
S
O
20 ~ 40
YWW
Z
KSH5027A
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
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KSH5027AF
HFE, DC CURRENT GAIN [A]
IC, COLLECTOR CURRENT [A]
Typical Characteristics
VCE, COLLECTOR-EMITTER VOLTAGE [V]
IC, COLLECTOR CURRENT [V]
Figure 1. Static Characteristic
VCE(SAT), SATURATION VOLTAGE [V]
VBE(SAT), SATURATION VOLTAGE[V]
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT [A]
Figure 4. Base-Emitter Saturation Voltage
tSTG, tF SWITCHING TIME [us]
PC, COLLECTOR POWER DISSIPATION[W]
Figure 3. Collector-Emitter Saturation Voltage
IC, COLLECTOR CURRENT [A]
IC, COLLECTOR CURRENT [A]
Figure 5. Resistive Load Switching Time
Tc, CASE TEMPERATURE [୅]
Figure 6. Power Derating
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡
KSH5027AF
IC, COLLECTOR CURRENT [A]
IC, COLLECTOR CURRENT [A]
Typical Characteristics ( Continued )
VCE, COLLECTOR-EMITTER VOLTAGE [V]
VCE, COLLECTOR-EMITTER VOLTAGE [V]
Figure 7. Reverse Biased
Safe Operating Area
Figure 8. Forward Bias
Safe Operating Area
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡
KSH5027AF
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
0.70±0.20
6.68±0.20
0.
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
20
0.80±0.20
0.50±0.20
2.54typ
2.54typ
Dimensions in Millimeters
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