HFP12N65S

BVDSS = 650 V
RDS(on) typ = 0.67 ȍ
HFP12N65S
ID = 12 A
650V N-Channel MOSFET
TO-220
FEATURES
‰
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‰
‰
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Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 38 nC (Typ
(Typ.))
Extended Safe Operating Area
Lower RDS(ON) : 0.67 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
1
2
3
1.Gate 2. Drain 3. Source
TC=25୅ unless otherwise specified
Parameter
Value
Units
650
V
VDSS
Drain Source Voltage
Drain-Source
ID
Drain Current
– Continuous (TC = 25୅)
12
A
Drain Current
– Continuous (TC = 100୅)
7.4
A
IDM
Drain Current
– Pulsed
48
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
860
mJ
IAR
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
225
W
1.78
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșCS
Case-to-Sink
RșJA
J
Junction-to-Ambient
ti t A bi t
Typ.
Max.
--
0.56
0.5
--
--
62 5
62.5
Units
୅/W
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HFP12N65S
Aug 2009
Symbol
y
Parameter
unless otherwise specified
Test Conditions
Min
Typ
y
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.0 A
--
0.67
0.78
Ÿ
VGS = 0 V
V, ID = 250 ᒺ
650
--
--
V
ID = 250 ᒺ, Referenced to 25୅
--
0.5
--
V/୅
VDS = 650 V, VGS = 0 V
--
--
1
ᒺ
VDS = 520 V, TC = 125୅
--
--
10
ᒺ
Off Characteristics
BVDSS
D i S
Drain-Source
Breakdown
B kd
V
Voltage
lt
ǻBVDSS Breakdown Voltage Temperature
/ǻTJ
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
ᒹ
IGSSR
G t B d L
Gate-Body
Leakage
k
C
Current,
t
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
ᒹ
--
1835
2385
ᓂ
--
185
240
ᓂ
--
16
21
ᓂ
--
30
70
ᓩ
--
85
180
ᓩ
--
140
280
ᓩ
--
90
190
ᓩ
--
38
49
nC
--
8
--
nC
--
13
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 325 V, ID = 12 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520V, ID = 12 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
12
ISM
Pulsed Source-Drain Diode Forward Current
--
--
48
VSD
Source-Drain
Source
Drain Diode Forward Voltage
IS = 12.0
12 0 A
A, VGS = 0 V
--
--
14
1.4
V
trr
Reverse Recovery Time
--
420
--
ᓩ
Qrr
Reverse Recovery Charge
IS = 12.0 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
4.9
--
ȝC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=11mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”12A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4 P
4.
Pulse
l T
Testt : Pulse
P l Width ” 300ȝs,
300
D
Duty
t C
Cycle
l ” 2%
5. Essentially Independent of Operating Temperature
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HFP12N65S
Electrical Characteristics TC=25 qC
HFP12N65S
ID, Drain
n Current [A]
ID, Dra
ain Current [A]
Typical Characteristics
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
1.5
IDR, Reverse
e Drain Current [A]
RDDS(ON)[:],
Drain-Sourcce On-Resistance
2.0
VGS = 10V
1.0
VGS = 20V
0.5
o
* Note : TJ = 25 C
0.0
0
5
10
15
20
25
30
35
VSD, Source-Drain Voltage [V]
ID, Drain Current[A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3500
12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 130V
3000
Ciss
Crss = Cgd
Capacitances [pF]
2500
2000
Coss
1500
Note ;
1000
1. VGS = 0 V
Crss
2. f = 1 MHz
500
VGS, Gate-S
Source Voltage [V]
Coss = Cds + Cgd
VDS = 325V
10
VDS = 520V
8
6
4
2
* Note : ID = 12.0A
0
-1
10
0
10
1
10
0
0
4
8
12
16
20
24
28
32
36
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
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HFP12N65S
Typical Characteristics
(continued)
RDS(ON), (Normalized)
e On-Resistance
Drain-Source
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
2.5
2.0
1.5
1.0
* Note:
1. VGS=10V
0.5
2. ID=6.0A
0.0
-100
-50
0
50
100
150
200
o
TJ, Junction Temperature [oC]
TJ, Junction Temperature[ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
14
Operation in This Area
is Limited by R DS(on)
2
10
10 Ps
12
ID, Drain
n Current [A]
1 ms
10 ms
100 ms
1
10
DC
0
10
-1
10
* Notes :
o
1. TC = 25 C
10
8
6
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
0
1
10
2
10
0
25
3
10
10
50
(t), Therrmal Response
100
125
150
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
75
o
VDS, Drain-Source Voltage [V]
TJC
10
Figure 10. Maximum Drain Current
vs Case Temperature
p
0
D = 0 .5
10
0 .2
-1
* N o te s :
o
1 . Z T J C ( t) = 0 .5 6 C /W M a x .
0 .1
2 . D u ty F a c to r , D = t 1 / t 2
0 .0 5
3 . T J M - T C = P D M * Z T J C ( t)
0 .0 2
10
0 .0 1
-2
PDM
s in g le p u ls e
Z
ID, Drain Current [A]
100 Ps
t1
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
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HFP12N65S
Fig 12. Gate Charge Test Circuit & Waveform
50KŸ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HFP12N65S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
G
Gate
Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HFP12N65S
Package Dimension
{vT
{v
TYYWGOhP
9.90±0.20
±0
6.50±0.20
1.30±0.20
9.19±0.20
2.80±0.220
1.27±0.20
1.52±0.20
4.50±0.20
60
±0 20
2 40±0.20
2.40
3.02±0.20
13.08±0.20
15.70±0.20
.
ij3
0
.2
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͪ͡͡
HFP12N65S
{vT
{v
TYYWGOiP
±0.20
0
.2
±0
84
6.30±0.20
6
1.27±0.20
9.14±0.20
2.74±0.200
15.44±0.20
.
ij3
4.57±0.20
1.27±0.20
2.67±0.20
13.28±0.20
2 67±0.20
2.67
0.81±0.20
2.54typ
2.54typ
0.40±0.20
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