1200 volt, 29 amp three phase silicon carbide mosfet

SENSITRON
SEMICONDUCTOR
SPM1007
TECHNICAL DATA
DATA SHEET 5393, REV. B
1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE
MOSFET BRIDGE WITH SILICON CARBIDE DIODES
FEATURES:
 80mΩ typical on-resistance
 Low Vf silicon carbide Schottky barrier diode
included in parallel with body diode
 Very fast switching and no reverse recovery
 Isolated base plate
 Aluminum Nitride substrate
 Light Weight Low Profile Standard Package
 High Temperature Engineering Plastic Shell Construction
Schematic Diagram:
ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED.
MAXIMUM RATINGS
RATING
SYMBOL
MAX
UNITS
VDSS
1200
V
ID
29
A
CONTINUOUS DRAIN CURRENT, TC = 100 C
ID
18
A
PULSED DRAIN CURRENT (t ≤10μs, dc ≤1%)
ID, pulse
80
A
VGSS
-6 to 22
V
O
Pd
125
W
O
Pd
96
W
MAXIMUM THERMAL RESISTANCE (MOSFET)
RJC
1.0
C/W
MAXIMUM THERMAL RESISTANCE (DIODE)
RJC
1.3
C/W
MAXIMUM STORAGE TEMPERATURE RANGE
Tstg
-55 to 175
C
MAXIMUM OPERATING TEMPERATURE RANGE
Top
-55 to 175
C
DRAIN-SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
O
GATE - SOURCE VOLTAGE
MAXIMUM POWER DISSIPATION, TC = 25 C (MOSFET)
MAXIMUM POWER DISSIPATION, TC = 25 C (DIODE)
©2013 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798 /www.sensitron.com  sales@sensitron.com
SENSITRON
SEMICONDUCTOR
SPM1007
TECHNICAL DATA
DATA SHEET 5393, REV. B
ELECTRICAL CHARACTERISTICS
ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED.
CHARACTERISTIC
MIN
DRAIN - SOURCE BREAKDOWN VOLTAGE (VGS = 0V, ID = 1mA)
1200
TYP
MAX
UNITS
V
ZERO GATE VOLTAGE DRAIN CURRENT (VDS = 1200V, VGS = 0V)
400
μA
GATE - SOURCE LEAKAGE CURRENT (VGS = +22V, VDS = 0V)
100
nA
GATE - SOURCE LEAKAGE CURRENT (VGS = -6V, VDS = 0V)
-100
nA
4.0
V
125
135
mΩ
GATE THRESHOLD VOLTAGE (VDS = VGS, ID = 4.4mA)
1.6
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (VGS = 18V, ID = 10A)
80
0
Tj = 125 C
TRANSCONDUCTANCE (VDS = 10V, ID = 10A)
3.7
S
INPUT CAPACITANCE (VGS = 0V, VDS = 800V, f = 1MHz)
1850
pF
OUTPUT CAPACITANCE (VGS = 0V, VDS = 800V, f = 1MHz)
175
pF
Turn - on delay time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω)
37
ns
Rise time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω)
33
ns
Turn - off delay time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω)
70
ns
Fall time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω)
28
ns
Total gate charge (VDD = 400V, VGS = 18V, ID = 10A)
106
nC
Gate - Source charge (VDD = 400V, VGS = 18V, ID = 10A)
27
nC
Gate - Drain charge (VDD = 400V, VGS = 18V, ID = 10A)
31
nC
Gate plateau voltage (VDD = 400V, VGS = 18V, ID = 10A)
9.7
V
INVERSE DIODE CONTINUOUS, FORWARD CURRENT
29
A
INVERSE DIODE DIRECT CURRENT, PULSED
80
A
1.5
V
FORWARD VOLTAGE (Vgs = 0V, Is = 10A)
1.3
REVERSE RECOVERY TIME (If = 10A, Vr = 400V, di/dt = 150A/µs)
37
ns
REVERSE RECOVERY CHARGE (If = 10A, Vr = 400V, di/dt = 150A/µs)
60
nC
PEAK REVERSE RECOVERY CURRENT (If = 10A, Vr = 400V, di/dt = 150A/µs)
2.4
A
©2013 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798 /www.sensitron.com  sales@sensitron.com
SENSITRON
SEMICONDUCTOR
SPM1007
TECHNICAL DATA
DATA SHEET 5393, REV. B
Mechanical Outline:
Package: EPAK1
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©2013 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798 /www.sensitron.com  sales@sensitron.com