600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT

SPM1005
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5287, Rev. C
600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE
BRIDGE MODULE WITH SiC FREEWHEELING DIODE
Features
 SiC Free wheel diode – zero reverse recovery loss
 Isolated base plate
 Low thermal impedance
 Aluminum Nitride base
 Light weight low profile standard package
 High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER IGBT LEG
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
600
-
-
V
-
-
30
A
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 200 A, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 100 C
16
Pulsed Collector Current, 1ms
ICM
-
-
90
A
Gate to Emitter Voltage
VGE
-
-
+/-20
V
Gate-Emitter Leakage Current , VGE = +/-20V
IGES
-
-
+/- 100
nA
Gate Threshold Voltage, IC = 0.43 mA
V GE(TH)
4.1
-
5.7
V
Zero Gate Voltage Collector Current
ICES
-
-
-
-
0.1
mA
o
VCE = 600 V, VGE=0V Ti=25 C
o
VCE = 480 V, VGE=0V Ti=125 C
Collector to Emitter Saturation Voltage
1.0
VCE(SAT)
O
TC = 25 C IC = 16A, VGE = 15V
O
TC = 125 C IC = 16A, VGE = 15V
-
-
2.2
-
-
2.6
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-
1630
108
50
-
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
-
23
35
220
26
-
ns
Turn on Energy Loss
Turn off Energy Loss
Eon
Eoff
-
0.69
0.33
-
mJ
(Tj = 25 C, IC = 16A, VGE = 15V, VCE = 400 V, RG = 10 )
O
-
-
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 1
pF
SPM1005
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5287, Rev. C
SILICON CARBIDE DIODES RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
Diode Peak Inverse Voltage
PIV
MIN
600
TYP
MAX
UNIT
-
V
O
Continuous Forward Current, TC = 25 C
O
IF
10
8
A
IFSM
50
A
V
TC = 100 C
Forward Surge Current, tp = 1ms
Diode Forward Voltage,
O
IF = 16A TC = 25 C
VF
-
-
2.4
2.5
Diode Maximum Junction-to-Case Thermal Resistance Per
Leg
RJC
-
-
3.0
IGBT Maximum Junction-to-Case Thermal Resistance Per
Leg
RJC
-
-
1.0
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
Isolation to Base Plate
Viso
-
-
2500
O
IF = 16A TC = 125 C
PACKAGE CHARACTERISTICS
Schematic Diagram:
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 2
o
C/W
o
C
V
SPM1005
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5287, Rev. C
Mechanical Outline (inches):
SPM1005
Package: EPAK1
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 3
SENSITRON
SEMICONDUCTOR
SPM1005
TECHNICAL DATA
DATASHEET 5287, Rev. C
Note: SPM1005EM units use this legacy package.
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 4