600 VOLT, 70 AMP IGBT DEVICE

SENSITRON
SEMICONDUCTOR
SHD724602
TECHNICAL DATA
DATA SHEET 4205, REV-
600 VOLT, 70 AMP IGBT DEVICE
VERY HIGH SPEED
WITH ULTRAFAST REVERSE RECOVERY DIODE
(Tj=250C UNLESS OTHERWISE SPECIFIED)
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MI N
TYP
MAX
UNIT
600
-
-
V
-
-
45 (1)
A
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250 µA, VGE = 0V
TC = 25 OC
Continuous Collector Current
IC
TC = 90
30
O
C
Pulsed Collector Current, 1msec
ICM
-
-
150
A
Gate to Emitter Voltage
VGE
-
-
+/-20
V
Gate-Emitter Leakage Current, VGE = +/-20V
IGES
-
-
+/- 100
nA
Gate Threshold Voltage, IC= 250 µA
VGE(TH)
2.5
-
5.0
V
Zero Gate Voltage Collector Current
ICES
-
-
0.2
3.0
mA
mA
VCE(SAT)
-
2.2
2.0
2.5
-
V
Cies
Coes
Cres
-
1500
145
40
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
td(on)
tr
td(off)
tf
-
13
17
130
80
-
(Tj = 125 OC, IC = 24A, VGE = 15V, inductive load, VCC =
400 V, RG = 5 Ω
Eoff
0.38
-
mJ
Eon
-
0.22
-
mJ
Maximum Thermal Resistance
RθJC
-
-
0.85
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
VCE = 600 V, VGE=0V Ti=25oC
o
VCE = 480 V, VGE=0V Ti=125 C
Collector to Emitter Saturation Voltage,
O
C
IC = 24A, VGE = 15V,
O
C
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
TC = 25
TC = 125
-
-
nsec
-
• 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 •
• World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] •
o
C/W
o
C
SHD724602
SENSITRON
TECHNICAL DATA
DATA SHEET 4205, REVULTRAFAST DIODE RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
Diode Peak Inverse Voltage
PIV
Continuous Forward Current, TC = 25 OC
IF
MIN
TYP
MAX
UNIT
600
-
-
V
-
-
45 (1)
A
O
TC = 90 C
30
Forward Surge Current, tp = 8.3 msec
IFSM
-
-
300
A
VF
-
1.7
1.8
V
-
-
1.7
trr
-
100
140
nsec
IRM
-
-
4
Α
Maximum Thermal Resistance
RθJC
-
-
1.0
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
Diode Forward Voltage,
O
IF = 30A
TC = 25 C
TC =
125 OC
Diode Reverse Recovery Time
O
Diode Reverse Recovery Current
(IF=30A, VRR=100V, di/dt=100 A/µs)
(1)
TC = 100 C
Current is limited by package leads to 45A; Die ratings are 70A.
C (3)
Schematic Diagram:
G (1)
E (2)
Package Drawing:
(TO258)
.165
.155
(4.19
Dia.
3.94)
.270 (6.86
.240 6.10)
.695 (17.65
.685 17.40)
.045 (1.14
.035 0.89)
.835 (21.21
.815 20.70)
.707 (17.96
.697 17.70)
1.302 (33.07
1.202 30.53)
G
E
.550 (13.97
.530 13.46)
C
.065 (1.65
.055 1.40)
3 Places
.200(5.08) BSC
2 Places
.140(3.56) BSC
1 2 3
• 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 •
• World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] •
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C/W
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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of the datasheet(s).
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]