SPM6G070-060D

SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE
0
(Tj=25 C UNLESS OTHERWISE SPECIFIED)
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
600
-
-
V
-
-
75
A
IC = 500 A, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 80 C
60
Pulsed Collector Current, Pulse Width limited by TjMax
ICM
-
-
Zero Gate Voltage Collector Current
ICES
-
-
o
VCE = 600 V, VGE=0V Ti=25 C
150
A
1
mA
10
mA
o
VCE = 480 V, VGE=0V Ti=125 C
Collector to Emitter Saturation Voltage,
IC=30A
IC=70A
O
Tj = 25 C
VCE(SAT)
-
Maximum Thermal Resistance
RJC
-
-
0.50
Maximum operating Junction Temperature
Tjmax
-40
-
150
o
Maximum Storage Junction Temperature
Tjmax
-55
-
150
o
IC=90A
1.15
1.50
1.70
V
1.30
1.80
2.00
o
C/W
C
C
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Page 1
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
PRODUCT PARAMETERS - (TC=25 oC unless otherwise noted)
Over-Temperature Shutdown
Over-Temperature Shutdown
Tsd
Over-Temperature Output
Tso
100
105
C
o
10
Over-Temperature Shutdown Hysteresis
o
110
10mV/ C
o
20
C
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
PIV
O
Continuous Forward Current,
TC = 25 C
O
TC = 80 C
Forward Pulse Current, Pulse Width limited by TjMax
IF
600
-
-
V
-
-
75
A
60
IFp
-
-
100
VF
-
Diode Reverse Recovery Time
(IF=40A, VRR=600V , di/dt=800 A/s)
trr
-
140
-
Maximum Thermal Resistance
RJC
-
-
0.75
VCC
14
15
18
A
O
Diode Forward Voltage, Tj = 25 C
IF=30A
IF=70A
IF=90A
1.18
1.50
1.62
V
1.35
1.80
1.95
nsec
o
C/W
Gate Driver
Supply Voltage
V
Supply Input Current at Vcc, Pin 19,
Without PWM Switching
35
, with 10KHz PWM at Two Inputs
mA
50
Input On Current
HIN, LIN
2
5.0
mA
Opto-Isolator Logic High Input Threshold
Ith
-
1.6
-
mA
Input Reverse Breakdown Voltage
BVin
5.0
-
-
V
Input Forward Voltage @ Iin = 5mA
VF
-
1.5
1.7
V
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Page 2
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Under Voltage Lockout
ITRIP Reference Voltage
(1)
VCCUV
9.0
10.0
11.5
V
Itrip-ref
1.57
1.63
1.68
V
Input-to-Output Turn On Delay
tond
-
700
-
Output Turn On Rise Time
tr
-
110
-
Input-to-Output Turn Off Delay
toffd
-
1100
-
Output Turn Off Fall Time
tf
-
50
-
600
750
-
2500
nsec
@ VCC=300V, IC=40A, TC = 25
Dead Time Requirement, for Shoot Through Prevention
Opto-Isolator Input-to-Output Isolation Voltage, momentary
-
Opto-Isolator Operating Input Common Mode Voltage
Opto-Isolator Operating Input Common Mode Transient
Immunity, with Iin > 5mA
Pin-To-Case Isolation Voltage, DC Voltage
nsec
-
V
1000
V
10
KV/usec
-
1500
-
V
-
5
-
mOhm
DC Bus Current Sensor
Shunt Resistor Value
-
Current Amplifier Gain, Referenced to Signal Gnd
0.049
Current Amplifier DC Offset (Zero DC Bus Current)
0.010
Current Amplifier Response Time
3
V/A
0.030
V
usec
(1) ITRIP current limit is internally set to 35A peak. The set point can be lowered by connecting a resistor between Itrip-ref
and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref. The off time duration is
about 70 usec.
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Page 3
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
+15V
+15V Rtn
(Signal Gnd1)
10
Gnd1
HIN-A
HIN-A
+VDC
LIN-A
PH-A
HIN-A
Rtn
10
LIN-A
LIN-A
Rtn
10
HIN-B
HIN-B
HIN-B
Rtn
10
LIN-B
LIN-B
LIN-B
Rtn
10
PH-B
HIN-C
HIN-C
HIN-C
Rtn
10
LIN-C
LIN-C
LIN-C
Rtn
SD
FLT
2.74K
+5V
2.74K
+5V
2.0K
PH-C
FLT-CLR
+5V-out
31.6K 10K
Over-Current Ref
1nF

1nF
2.74K
Ido (Optional)
0.005
+VDC
Ido (Standard)
Rtn
G=9.8
5V Regulator
+5V
To-SD
10k
Temperature Sensor
TCo
0.1uF
Heat-Sinck
To SD
Gnd1
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Page 4
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Figure 2 - Package Drawing Top & Side Views
(All dimensions are in inches, tolerance is +/- 0.010”)
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Page 5
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Figure 3 - Package Pin Locations
(All dimensions are in inches; tolerance is +/- 0.005” unless otherwise specified)
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Page 6
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
PIN OUT
Pin #
Name
Description
1
HinA
Isolated Drive Input for High-side IGBT of Phase A
2
HinA-Rtn
Return for Input at 1
3
NC
Not Connected
4
LinA
Isolated Drive Input for Low-side IGBT of Phase A
5
LinA-Rtn
Return for Input at 4
6
NC
Not Connected
7
HinB
Isolated Drive Input for High-side IGBT of Phase B
8
HinB-Rtn
Return for Input at 7
9
NC
Not Connected
10
LinB
Isolated Drive Input for Low-side IGBT of Phase B
11
LinB-Rtn
Return for Input at 10
12
HinC
Isolated Drive Input for High-side IGBT of Phase C
13
HinC-Rtn
Return for Input at 12
14
LinC
Isolated Drive Input for Low-side IGBT of Phase C
15
LinC-Rtn
Return for Input at 14
16
NC
Not Connected
17
NC
Not Connected
18
NC
19
Vcc
Not Connected
+15V input biasing supply connection for the controller.
Under-voltage lockout keeps all outputs off for Vcc
below 10.5V. Vcc pin should be connected to an
isolated 15V power supply. Vcc recommended limits are
14V to 16V , and shall not exceed 18V. The return of
Vcc is pin 20.
Recommended power supply capability is about 70mA.
20
+15V Rtn (3)
Signal ground for all signals at Pins 19 through 27. This
ground is internally connected to the +VDC Rtn through
1.7 Ohms. It is preferred not to have external connection
between Signal Gnd and +VDC Rtn.
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Page 7
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Pin #
Name
Description
21
SD (3)
It is an active low, dual function input/output pin. It is internally pulled
high to +5V by 2.74K . As a low input it shuts down all IGBTs
regardless of the Hin and Lin signals.
SD is internally activated by the over-temperature shutdown, overcurrent limit, and desaturation protection
Desaturation shutdown is a latching feature. Over-temperature
shutdown, and over-current limit are not latching features.
SD can be used to shutdown all IGBTs by an external command. An
open collector switch shall be used to pull down SD externally.
SD can be used as a fault condition output. Low output at SD indicates
a latching fault situation.
(3)
22
Flt
23
Flt-Clr
It is a dual function input/output pin. It is an active low input, internally
pulled high to +5V by 2.74K . If pulled down, it will freeze the status of
all the six IGBTs regardless of the Hin and Lin signals.
As an output, Pin 13, reports desaturation protection activation. When
desaturation protection is activated a low output for about 9 sec is
reported.
If any other protection feature is activated, it will not be reported by Pin
22.
(3)
is a fault clear input. It can be used to reset a latching fault condition, due
to desaturation protection.
Pin 23 an active high input. It is internally pulled down by 2.0K. A
latching fault due to desaturation can be cleared by pulling this input high
to +5V by 200-500, or to +15V by 3-5Kas shown in Fig. 6.
It is recommended to activate fault clear input for about 300 sec at
startup.
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Page 8
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Pin #
Name
Description
24
+5V Output
+5V output. Maximum output current is 30mA
25
Itrip-Ref (3)
Adjustable voltage divider reference for over-current shutdown. Internal
pull-up to +5V 31.6K, pull down to ground is 10Kand hysteresis
resistance ofK. The internal set point is 1.64V, corresponding to
over-current shutdown of 34A. The re-start delay time is about 100
usec.
26
Idco
DC bus current sense amplifier output. The sensor gain is 0.049V/A. The
internal impedance of this output is 2.74K, and internal filter
capacitance is 1nF.
27
TCo
Analog output of case temperature sensor. The sensor output gain is
0.010 V/oC, with zero DC offset. This sensor can measure both positive
and negative oC. The internal impedance of this output is 10K
The internal block diagram of the temperature sensor is shown in Fig. 5.
28 &29
PhA
Phase A output
30 & 31
PhB
Phase B Output
32 & 33
PhC
Phase C Output
34 & 35
+VDC Rtn
DC Bus return
36 & 37
+VDC
DC Bus input
Case
Case
Isolated From All Terminals
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Page 9
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Application Notes
a- Input Interface:
Recommended input turn-on current for all six drive signals is 5-8mA.
For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as
shown in Fig. 4.
Note : Connect LinA to non-inverting output for a non-inverting input logic.
Connect LinA to inverting output for an inverting input logic.
300-400
One Channel
of DS34C87
LinA
OptoCoupler
Input
2-5K
LinA-R
Fig. 4. Input Signal Buffer
b-Temperature Sensor Output:
10k
Pin 27
0.1uF
Fig. 5 Temperature Sensor Internal Block Diagram
For both negative and positive temperature measurement capability, Contact the Factory.
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Page 10
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
c- System Start Up Sequence:
Activate fault clear input for about 300 sec at startup. The micro-controller enable output is
inverted and fed to the second DS34C87 control input. When the controller is in disable mode, the
Flt-clr is enabled and Phase C low-side IGBT is turned on. This allows for the bootstrap circuit of
the high-side IGBT of Phase C to be charged. At the same time, the high-side bootstrap circuits of
Phases A and B will charge through the motor winding. Once the controller is enabled, PWM
signals of all channels should start.
Fig. 6 shows a recommended startup circuit.
Notes:
1- Gnd1 and Gnd2 are isolated grounds from each other.
2- The +5V power supply used for DS34C87 is an isolated power supply.
3- The +15V power supply used for SPM6G070-060D is an isolated power supply.
350
DS34C87
HinA
LinA
HinB
LinB
Enable
Micro
Controller
HinC
LinC
OutA-P
OutA-N
OutB-P
InB
OutB-N
InC
OutC-P
OutC-N
InD
OutD-P
A/B Cont OutD-N
+5V
C/D Cont
Gnd
2.74k
InA
2.74k
350
350
350
2.74k
2.74k
+5V-in
2.74k
Gnd2
DS34C87
350
OutA-P
OutA-N
OutB-P
InB
OutB-N
InC
OutC-P
OutC-N
InD
OutD-P
A/B Cont OutD-N
+5V
C/D Cont
Gnd
HinA
HinA-R
LinA
LinA-R
HinB
HinB-R
LinB
LinB-R
HinC
HinC-R
LinC
LinC-R
InA
350
SPM6G070-060D
350
350
15V
2.74K
Flt-Clr
Gnd1
2.74K
SFH6186-4
Fig. 6 Input Interface and Startup Circuit
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Page 11
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
Truth Table For DS34C87
Input
Control Input
Non-Inverting Output
Inverting Output
H
H
H
L
L
H
L
H
X
L
Z
Z
d- DC Bus Charging from 15V
D1
Vcc
+15V
R1
100K
R2
100K
D2
DSH
Q1H
700
K
VBS
DSL
700
K
+15V Rtn
Sgnl Gnd1
Figure 7.





+VDC
D3
PhA

Q1L
Gate
Driver
+VDC Rtn
Charging Path from 15V Supply to DC Bus when DC Bus is off
Each IGBT is protected against desaturation.
D2 is the desaturation sense diode for the high-side IGBT
D3 is the desaturation sense diode for the low-side IGBT
When the DC bus voltage is not applied or below 15V, there is a charging path from
the 15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K
Ohm resistor. The charging current is 0.15mA per IGBT. Total charging current is
about 1.5mA.
Do not apply PWM signal if the DC bus voltage is below 20V.
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Page 12
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
g- IGBT and Diode Switching Characteristics and Waveforms:
g.1- Test Conditions: VCE=280V, IC= 25A
Test Results: Rise time tr= 66 nsec, Fall time tf= 52 nsec
Current Scale is 20A/div, Voltage Scale is 50V/div, Power Loss Scale is 2000Watt/div
Turn On Switching Loss = 0.47 mJ, Turn Off Switching Loss = 0.8 mJ
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Page 13
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
g.2- Test Conditions: VCE=280V, IC= 35A
Test Results: Rise time tr= 102 nsec, Fall time tf= 45 nsec
Current Scale = 20A/div, Voltage Scale = 50V/div, Power Loss Scale = 4000Watt/div
Turn On Switching Loss = 0.7 mJ, Turn Off Switching Loss = 1.4 mJ
VCE
IC
PLoss
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Page 14
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
h- IGBT and Diode Conduction Characteristics:
Tj=25oC
Tj=150oC
Figure 14.
Figure 15.
IGBT Conduction Characteristics
Diode Conduction Characteristics
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Page 15
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
i-
Increasing Current Limit Window:
The adjustable over-current shutdown reference at Pin25 is internally set to 1.64V corresponding to
34A. A voltage divider reference is used as shown in Fig.16. Internal pull-up to +5V is 31.6K, pull
down to ground is 10Kand hysteresis resistance to SD is K. The re-start delay time, off
time, is about 100 usec.
In order to increase the over-current shutdown reference to 2.8V, corresponding to 57A peak
current, an external pull-up resistance R is needed. It is recommended to add R=9 K between
Pins 21 and 25. The corresponding off time will be about 200usec.
The additional R=9 K will reduce the high level of SD to 4.4V.
Pin 24
+5V
R1
31.6K
Pin 20
+15V Rtn
Signal Gnd
Figure 16.
Pin 21
SD
R4
2.74K
R3
49.9K
R2
10K
Pin 25
Itrip-ref
Internal Over-Current Shutdown Reference
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Page 16
SENSITRON
SEMICONDUCTOR
SPM6G070-060D
TECHNICAL DATA
DATASHEET 4328, Rev. B
j- Cleaning Process:
Suggested precaution following cleaning procedure:
If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended
that the parts be baked immediately after cleaning. This is to remove any moisture that
may have permeated into the device during the cleaning process. For aqueous based
solutions, the recommended process is to bake for at least 2 hours at 125 oC.
Do not use solvents based cleaners.
k- Soldering Procedure:
Recommended soldering procedure
Signal pins 1 to 27: 210C for 10 seconds max
Power pins 28 to 37: 260C for 10 seconds max. Pre-warm module to 125C to aid in
power pins soldering.
Ordering Information:
SPM6G070-060D comes standard with a bi-directional current sense signal.
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
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Page 17