1C4942 1C4944 1C4946 1C4947 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 931, REV.B FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage 1C4942 1C4944 1C4946 1C4947 Symbol VRWM Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature IF(AV) TJ Tstg Condition - @ 55°C - Max. Units 200 400 600 800 V 1.0 40 -55 to +175 -55 to +175 A mil °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Reverse Recovery Time 1C4942 1C4944 1C4946 1C4947 Symbol VF1 IR1 IR2 trr Condition @ 1.0A, Pulse, TJ = 25 °C Duty cycle ≤ 2%, pulse width ≤ 300μs @VR = 400V, Pulse, TJ = 25 °C @VR = 400V, Pulse, TJ = 100 °C If = 500mA, Ir = 1A, Irm = 250mA Max. 1.3 Units V 1.0 200 μA μA 150 150 250 250 ns Mechanical Dimensions: In Inches / mm Bottom side metalization: Ti/NiAg - 30 kÅ minimum. Top side metalization: Al - 25 kÅ minimum ANODE 0.024 ± 0.003 (0.610 ± 0.076) 0.040 ± 0.003 (1.016 ± 0.076) Bottom side is cathode, top side is anode. For cathode top, add –R Anode 0.009 ± 0.001 (0.229 ± 0.025) Cathode ©2000 Sensitron Semiconductor • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • www.sensitron.com • [email protected] 1C4942 1C4944 1C4946 1C4947 TECHNICAL DATA DATA SHEET 931, REV.B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2000 Sensitron Semiconductor • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • www.sensitron.com • [email protected]