SENSITRON SEMICONDUCTOR SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 HERMETIC RAD HARD POWER N-CHANNEL MOSFET ARRAY FEATURES: Six individual 250 Volt, 0.16 Ohm, 12.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Single Event Effect (SEE) hardened, LET 85, Range: 118μm o VGS = -10V, VDS = 250V o VGS = -15V, VDS = 120V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching Low RDS (on) MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT PULSED DRAIN CURRENT (LIMITED BY TJMAX) OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE DISSIPATION THERMAL RESISTANCE, JUNCTION TO CASE AVALANCE ENERGY (1) ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG PD RthJC EAS MIN. -55 - TYP. - MAX. 20 12.4 50 +150 TBD TBD 60 UNITS Volts Amps Amps C Watts C/W mJ ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS DRAIN TO SOURCE BREAKDOWN VOLTAGE BVDSS 250 Volts VGS = 0V, ID = 250A STATIC DRAIN TO SOURCE ON STATE RESISTANCE RDS(ON) VGS = 10V, ID = 8A 0.16 GATE THRESHOLD VOLTAGE VDS ≥ VGS, ID = 1mA VGS(th) 2.0 4.0 Volts ZERO GATE VOLTAGE DRAIN CURRENT VDS = 200V, VGS = 0V IDSS 25 A GATE TO SOURCE LEAKAGE FORWARD VGS = 20V IGSS 100 nA GATE TO SOURCE LEAKAGE REVERSE VGS = -20V -100 TURN ON DELAY TIME VDD = 125V td(ON) 25 RISE TIME ID = 8A, tr 25 nsec td(OFF) 30 TURN OFF DELAY TIME RG = 4.7 tf 20 FALL TIME DIODE FORWARD VOLTAGE IS = 12.4A VSD 1.25 Volts VGS = 0V REVERSE RECOVERY TIME VDD = 125V trr 400 nsec If = 12.4A INPUT CAPACITANCE VGS = 0 V Ciss 1300 1900 OUTPUT CAPACITANCE VDS = 100 V Coss 90 150 pF REVERSE TRANSFER CAPACITANCE f = 1.0MHz **NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and may not be exported without the appropriate U.S. Department of State authorization. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 SCHEMATIC MECHANICAL DIMENSIONS: in Inches / mm 1.00 REF .625 ± .010 PINOUT 3 G1 4 5 N/C D2 6 S2 7 G2 8 C 1 22 C .500 ± .005 S1 .050 TYP 2 PINOUT .015 TYP D1 .625 ± .010 1 22 G6 21 S6 20 D6 19 N/C 18 G5 17 S5 16 D5 15 N/C 9 N/C D3 14 G4 10 S3 13 S4 11 G3 12 D4 11 12 .125 MAX R .010 TYP .060 ± .005 TYP .122 ± .010 TYP .05 REF 0.010 ± .002 22-Lead Flatpack ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected]