Technical Data Sheet.

SENSITRON
SEMICONDUCTOR
MURC405-MURC460
Technical Data
Data Sheet 4855, Rev.-
MURC405-MURC460
Ultrafast Silicon Die
Applications:
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
•
•
•
•
•
•
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward
Current(Square Wave)
Symbol
VRRM
VRWM
VR
IF(AV)
MURC
405
50
MURC
410
100
MURC
415
150
MURC
420
200
MURC
440
400
MURC
460
600
Unit
V
4.0 @ TA = 80°C
4.0 @ TA = 40°C
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half
wave, single phase, 60Hz)
IFSM
125
110
A
Max. Junction Capacitance @VR = 5V,
TC = 25 °C, fSIG = 1MHz, VSIG = 50mV (p-p)
Operating JunctionTemperature and Storage
Temperature
CT
100
40
pF
TJ, Tstg
°C
-65 to +175
Electrical Characteristics:
Characteristics
Max. Instantaneous Forward Voltage (Note1)
(IF = 3.0 Amp, TJ = 150 °C)
(IF = 3.0 Amp, TJ = 25 °C)
(IF = 4.0 Amp, TJ = 25 °C)
Max. Instantaneous Reverse Current (Note1)
(Rated DC Voltage, TJ = 150 °C)
(Rated DC Voltage, TJ = 25 °C)
Max. Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/µs)
(IF = 0.5 Amp, IR = 1.0 A, IREC=0.25A)
Max. Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 A/µs,
Recover to 1.0 V)
1.
Symbol
VF
IR
trr
Tfr
MURC
405
MURC
410
MURC
415
MURC
420
MURC
440
MURC
460
Unit
V
0.71
0.88
0.89
1.05
1.25
1.28
150
5
250
10
35
25
25
75
50
50
µA
nS
Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •
nS
SENSITRON
SEMICONDUCTOR
MURC405-MURC460
Data Sheet 4855, Rev.-
Dimensions in inches (mm)
Top side metalization:
Al - 25 kÅ minimum or
Ti/Ni/Ag - 30 kÅ minimum
ANODE
B A
Bottom side metalization:
Ti/Ni/Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
Anode
C
Cathode
Die type
Area (mil2)
Si p-n die
65 x 65
Tolerance is ± 0.003” (0.076 mm)
(2)
Tolerance is ± 0.001” (0.025 mm)
(1)
Dimension A (1)
Inch (millimeter)
0.065 (1.651)
Dimension B (1)
Inch (millimeter)
0.049 (1.254)
Dimension C (2)
Inch (millimeter)
0.009 (0.229)
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •
SENSITRON
SEMICONDUCTOR
MURC405-MURC460
Data Sheet 4855, Rev.-
MURC405, MURC410, MURC415, MURC420
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •
SENSITRON
SEMICONDUCTOR
MURC405-MURC460
Data Sheet 4855, Rev.-
MURC440, MURC460
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected]