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(VGS = −4.0 V, ID = −3.0 A) RDS(on)3 = 84 mΩ MAX. (VGS = −2.5 V, ID = −3.0 A) 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION 0.4 FEATURES PACKAGE DRAWING (Unit: mm) 1.5 The μPA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 DESCRIPTION 1, 2, 5, 6 : Drain 3 : Gate 4 : Source PART NUMBER PACKAGE μPA1919TE SC-95 (Mini Mold Thin Type) Marking: TX EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) (TA = 25°C) ID(DC) m6.0 A ID(pulse) m24 A PT1 0.2 W PT2 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.6 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16298EJ2V0DS00 (2nd edition) Date Published July 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2002 μ PA1919 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1.0 μA Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m10 μA −1.5 V Gate to Source Cut-off Voltage VDS = −10 V, ID = −1.0 mA −0.5 −1.0 | yfs | VDS = −10 V, ID = −3.0 A 5.0 9.5 RDS(on)1 VGS = −4.5 V, ID = −3.0 A 46 58 mΩ RDS(on)2 VGS = −4.0 V, ID = −3.0 A 48 60 mΩ RDS(on)3 VGS = −2.5 V, ID = −3.0 A 63 84 mΩ VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = −10 V 680 pF Output Capacitance Coss VGS = 0 V 170 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 95 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −3.0 A 15 ns VGS = −4.0 V 19 ns RG = 10 Ω 47 ns 65 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −16 V 6.0 nC Gate to Source Charge QGS VGS = −4.0 V 1.5 nC Gate to Drain Charge QGD ID = −6.0 A 2.4 nC IF = 6.0 A, VGS = 0 V 0.93 V Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 μs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS(−) VGS(−) 0 IG = −2 mA td(off) tf toff Data Sheet G16298EJ2V0DS μ PA1919 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF SAFE OPERATING AREA FORWARD BIAS TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 Single pulse Mounted on FR−4 board of 2 2500 mm x 1.6 mm, t ≤ 5 sec. 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 R D S (o n ) L im ite d (V G S = − 4 .5 V ) I D (p u ls e ) PW = 1 m s I D (D C ) - 1 10 m s 100 m s - 0 .1 S in g le p u ls e M o u n te d o n F R − 4 b o a rd o f 2 2 5 0 0 m m x 1 .6 m m - 0 .0 1 - 0 .1 - 1 5 s - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A - 10 Single pulse Without board 100 Mounted on FR−4 board of 2 2500 mm x 1.6 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16298EJ2V0DS 3 μ PA1919 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS - 24 - 100 V DS=−10V P u ls e d P ulsed - 10 V G S = −4.5 V −4.0 V ID - Drain Current - A ID - Drain Current - A - 20 - 16 - 12 −2.5 V -8 -4 - 1 - 0 .1 - 0 .0 0 1 0 0 - 0.5 -1 - 1.5 - 0 .0 0 0 1 -2 0 VDS - Drain to Source Voltage - V 100 | yfs | - Forward Transfer Admittance - S = −10 V I D = −1.0 m A V DS -1 - 0.8 - 0.6 - 0.4 -50 0 50 100 150 ID = −3.0 A Pulsed 120 V GS = −2.5 V 80 V GS = −4.0 V V GS = −4.5 V 0 50 100 150 Tch - Channel Temperature - °C 4 - 2 .5 10 T A = 125°C 75°C 25°C −25°C 1 0.1 - 0.01 - 0.1 -1 - 10 - 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 160 0 - 2 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -50 - 1 .5 V DS = −10 V Pulsed Tch - Channel Temperature - °C 40 - 1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT - 1.4 - 1.2 - 0 .5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C - 0 .0 1 160 ID = −3.0 A Pulsed 120 80 40 0 0 -2 -4 -6 -8 - 10 VGS - Gate to Source Voltage - V Data Sheet G16298EJ2V0DS - 12 - 3 μ PA1919 160 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT V GS = −4.5 V Pulsed 120 T A = 125°C 80 75°C 40 25°C −25°C 0 - 0.01 - 0.1 -1 - 10 - 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 16 0 V G S = − 4.0 V P u lse d 12 0 T A = 12 5°C 75°C 80 40 2 5°C − 2 5°C 0 - 0.0 1 - 0.1 ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 10000 120 T A = 1 2 5 °C 75° 80 2 5 °C − 2 5 °C 0 - 0 .0 1 - 0 .1 - 1 - 10 VGS = 0 V f = 1 .0 M H z 1000 C iss C oss 100 C rss 10 - 0 .1 - 100 SWITCHING CHARACTERISTICS - 1 00 100 V D D = −10 V V G S = −4.0 V R G = 10 W t d(off) 100 tf t d(on) tr -1 IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns - 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 1 - 0.1 -1 VDS - Drain to Source Voltage - V ID - Drain Current - A 10 - 10 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V G S = − 2 .5 V P u ls e d 40 - 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 -1 - 10 ID - Drain Current - A VGS = 0 V Pulsed 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF(S-D) - Source to Drain Voltage - V Data Sheet G16298EJ2V0DS 5 μ PA1919 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 VGS - Gate to Source Voltage - V ID = −6.0 A -4 VDD = −10 V −16 V -3 -2 -1 0 0 1 2 3 4 5 6 7 8 QG - Gate Charge - nC 6 Data Sheet G16298EJ2V0DS μ PA1919 • The information in this document is current as of July, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1