uPA1914 DS - Renesas Electronics

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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1914
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
FEATURES
0.16+0.1
–0.06
+0.1
0.65–0.15
0.32 +0.1
–0.05
6
5
4
1
2
3
1.5
2.8 ±0.2
The µPA1914 is a switching device which can be driven
directly by a 4 V power source.
The µPA1914 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A)
0 to 0.1
0.95
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1914TE
SC-95 (Mini Mold Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±4.5
A
ID(pulse)
±18
A
PT1
0.2
W
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Body
Diode
Gate
Gate
Protection
Diode
Source
Marking: TF
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13810EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1998, 1999
µPA1914
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.6
–2.5
V
| yfs |
VDS = –10 V, ID = –2.5 A
1
7.1
RDS(on)1
VGS = –10 V, ID = –2.5 A
43
57
mΩ
RDS(on)2
VGS = –4.5 V, ID = –2.5 A
58
86
mΩ
RDS(on)3
VGS = –4.0 V, ID = –2.5 A
64
96
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
589
pF
Output Capacitance
Coss
VGS = 0 V
210
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
86
pF
Input Capacitance
Ciss
VDS = –25 V
546
pF
Output Capacitance
Coss
VGS = 0 V
148
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
65
pF
Turn-on Delay Time
td(on)
VDD = –15 V
16
ns
tr
ID = –2.5 A
57
ns
VGS(on) = –10 V
63
ns
tf
RG = 10 Ω
80
ns
Total Gate Charge
QG
VDD= –24 V
11
nC
Gate to Source Charge
QGS
ID = –4.5 A
1.5
nC
Gate to Drain Charge
QGD
VGS = –10 V
2.8
nC
Rise Time
Turn-off Delay Time
td(off)
Fall Time
Diode Forward Voltage
VF(S-D)
IF = 4.5 A, VGS = 0 V
0.88
V
Reverse Recovery Time
trr
IF = 4.5 A, VGS = 0 V
22
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
11
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
IG = 2 mA
td(off)
tf
toff
Data Sheet D13810EJ2V0DS
µPA1914
TYPICAL CHARACTERISTICS (TA = 25°C)
!
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
−100
80
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
ID (pulse)
d
ite
im
)L
(on
DS
−10
R
−0.1
PW
ID (DC)
=1
ms
=1
0
PW
ms
=
PW 100
ms
=5
s
−1
20
PW
Single Pulse
Mounted on 250mm2 x 35µm Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
0
30
60
120
90
TA - Ambient Temperature - ˚C
−0.01
−0.1
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −4.5 V
VGS = −4.0 V
−4
ID - Drain Current - A
ID - Drain Current - A
VGS = −10 V
−8
VDS = −10 V
−1
−0.1
TA = 125˚C
TA = 75˚C
−0.01
TA = 25˚C
TA = −25˚C
−0.001
−0.0001
0
0.0
−0.2
−0.6
−0.4
−0.8
−1.0
−0.00001
−0.5
−1.0
VDS = −10 V
ID = − 1 mA
100
−1.5
0
50
100
−2.0
−2.5
−3.0
−3.5
−4.0
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.0
−50
−1.5
VGS - Gate to Sorce Voltage - V
VDS - Drain to Source Voltage - V
−2.0
−100
−10
VGS = −20 V
−12
−10
TRANSFER CHARACTERISTICS
−100
−20
−16
−1
VDS - Drain to Source Voltage - V
150
VDS = −10V
10
TA = −25 ˚C
TA = 25 ˚C
TA = 75 ˚C
TA = 125 ˚C
1
0.1
0.01
−0.01
Tch - Channel Temperature - ˚C
−0.1
−1
−10
−100
ID - Drain Current - A
Data Sheet D13810EJ2V0DS
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −4.0 V
100
TA = 125˚C
80
TA = 75˚C
TA = 25˚C
60
TA = −25˚C
40
−0.01
−1
−0.1
−10
−100
RDS(on) - Drain to Source On-State Resistance - mΩ
RDS(on) - Drain to Source On-State Resistance - mΩ
µPA1914
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −4.5 V
80
TA = 125˚C
TA = 75˚C
60
TA = 25˚C
TA = −25˚C
40
−0.01
60
TA = 125˚C
TA = 75˚C
TA = 25˚C
40
TA = −25˚C
30
−0.01
−0.1
−1
−10
−100
RDS (on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-State Resistance - mΩ
VGS = −10 V
50
100
ID = −2.5 A
VGS = −4.0 V
80
VGS = −4.5 V
60
VGS = −10 V
40
20
−50
0
50
100
Tch - Channel Temperature -˚C
10000
ID = −2.5 A
80
60
40
f = 1 MHz
VGS = 0V
1000
Ciss
Coss
100
Crss
10
−0.1
−8
−16
−12
−4
VGS - Gate to Source Voltage - V
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
RDS (on) - Drain to Source On-state Resistance - mΩ
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
0
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
ID - Drain Current - A
100
−10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
70
−1
−0.1
ID - Drain Current - A
−20
Data Sheet D13810EJ2V0DS
−1
−10
VDS - Drain to Source Voltage - V
−100
µPA1914
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
IF - Source to Drain Current - A
td(on), tr, td(off), tf - Switchig Time - ns
1000
tr
tf
100
td(off)
td(on)
10
VDD = −15V
VGS(on) = −10V
RG = 10Ω
1
−0.1
−1
ID - Drain Current - A
10
1
0.1
0.01
0.4
−10
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
12
ID = −4.5 A
10
VDD = −24 V
−15 V
−6 V
8
6
4
2
0
0
2
4
6
8
Qg - Gate Charge - nC
!
10
12
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - ˚C/W
1000
Without Board
100
Mounted on 250mm2 x 35 µm
Copper Pad
Connected to Drain Electrode
in 50mm x 50mm x 1.6mm
FR-4 Board Single Pulse
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - S
Data Sheet D13810EJ2V0DS
5
µPA1914
[MEMO]
6
Data Sheet D13810EJ2V0DS
µPA1914
[MEMO]
Data Sheet D13810EJ2V0DS
7
µPA1914
• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4