To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ (TO-263) LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape TO-263 (MP-25ZK) 800 p/reel typ. 1.5 g Note Note Note See “TAPE INFORMATION” FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) • Low Ciss: Ciss = 2500 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±70 A Drain Current (pulse) Note1 ID(pulse) ±135 A Total Power Dissipation (TA = 25°C) PT1 1.8 W Total Power Dissipation (TC = 25°C) PT2 120 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C IAS 22 A EAS 48 mJ Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18040EJ2V0DS00 (2nd edition) Date Published June 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 NP70N10KUF ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT BVDSS ID = 250 μA, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 1.7 2.5 3.3 V | yfs | VDS = 10 V, ID = 20 A 11 22 RDS(on) VGS = 10 V, ID = 35 A Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 100 V S 17 20 mΩ Input Capacitance Ciss VDS = 25 V 2500 3750 pF Output Capacitance Coss VGS = 0 V 270 410 pF Reverse Transfer Capacitance Crss f = 1 MHz 110 200 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 35 A 25 53 ns VGS = 10 V 9 23 ns RG = 0 Ω 48 96 ns 7 18 ns 75 nC Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 50 Gate to Source Charge QGS VGS = 10 V 16 nC QGD ID = 70 A 19 nC VF(S-D) IF = 70 A, VGS = 0 V 1.0 Reverse Recovery Time trr IF = 70 A, VGS = 0 V 88 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 245 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D18040EJ2V0DS td(on) ton tf toff V NP70N10KUF TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 135 A RDS(on) Limited (at VGS = 10 V) 100 100 μs ID(DC) = 70 A 10 DC 1 ms TC = 25°C Single pulse 10 ms 1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 1.25°C/W 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18040EJ2V0DS 3 NP70N10KUF DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1000 ID - Drain Current - A ID - Drain Current - A 150 V GS = 10 V 100 6.0 V 50 100 Tch = −55°C 25°C 75°C 150°C 175°C 10 1 0.1 VDS = 10 V Pulsed Pulsed 0 0.01 0 1 2 3 4 5 0 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 4 3.5 3 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 0.5 100 Tch = −55°C 25°C 75°C 150°C 175°C 10 1 VDS = 10 V Pulsed 0.1 0.1 175 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed 40 30 VGS = 6.0 V 10 V 10 0 1 10 100 10 100 ID - Drain Current - A 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Tch - Channel Temperature - °C 20 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 45 ID = 35 A Pulsed 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 Data Sheet D18040EJ2V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 60 10000 ID = 35 A Pulsed 40 30 VGS = 10 V 20 10 0 -100 -50 0 50 100 150 Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.01 200 Tch - Channel Temperature - °C 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 90 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS VDD = 50 V VGS = 10 V RG = 0 Ω 100 td(off) td(on) tr 10 tf 12 ID = 70 A VDD = 80 V 50 V 20 V 80 70 10 60 8 VGS 50 6 40 30 4 20 VDS 2 10 1 0 0.1 1 10 100 0 0 ID - Drain Current - A 10 20 30 40 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 0.1 100 10 VGS = 10 V 0V 1 100 10 0.1 di/dt = 100 A/μs VGS = 0 V 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF – Diode Forward Current - A Data Sheet D18040EJ2V0DS 5 VGS - Gate to Source Voltage - V 50 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ NP70N10KUF NP70N10KUF SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS = 22 A EAS = 48 mJ 10 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 1μ Energy Derating Factor - % IAS - Single Avalanche Current - A 100 60 40 20 0 10 μ 100 μ 1m 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H 6 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 22 A 80 Data Sheet D18040EJ2V0DS NP70N10KUF PACKAGE DRAWING (Unit: mm) 1.35±0.3 TO-263 (MP-25ZK) 4.45±0.2 1.3±0.2 0.025 to 0.25 0.5± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 8o 0.25 1 2 3 1.Gate 2.Drain 2.5 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D18040EJ2V0DS 7 NP70N10KUF <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 70N10 UF Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP70N10KUF should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Recommended Condition Symbol IR60-00-3 Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet D18040EJ2V0DS P350 NP70N10KUF • The information in this document is current as of June, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1