2SK3115B DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115B
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
PART NUMBER
The 2SK3115B is N-Channel MOS FET device that features a
2SK3115B-S17-AY
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
PACKAGE
Note
Isolated TO-220
Note Pb-free (This product does not contain Pb in
supply, AC adapter.
External electrode.)
FEATURES
• Low gate charge
QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±6.0
A
ID(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
35
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
IAS
6.0
A
EAS
24
mJ
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18065EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP (K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
2SK3115B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 3.0 A
2.0
RDS(on)
VGS = 10 V, ID = 3.0 A
Gate Cut-off Voltage
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
2.7
S
0.9
Ω
1.2
Input Capacitance
Ciss
VDS = 10 V
1090
pF
Output Capacitance
Coss
VGS = 0 V
380
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
53
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.0 A
16
ns
tr
VGS = 10 V
11
ns
td(off)
RG = 10 Ω
29
ns
tf
RL = 50 Ω
8
ns
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
QG
VDD = 450 V
21
nC
Gate to Source Charge
QGS
VGS = 10 V
8
nC
QGD
ID = 6.0 A
8
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 6.0 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
360
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/μs
1730
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10%
0
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
RL
VDD
Data Sheet D18065EJ2V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3115B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
20
60
40
20
0
40 60
80 100 120 140 160
Tch - Channel Temperature - °C
20
40 60
80 100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
PW = 10 μs
100 μs
ID(DC)
10
10 ms
1 ms
1
RDS(on) Limited
(at VGS = 10 V)
0.1
Power Dissipation
Tc = 25℃, Single pulse
0.01
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
Rth(ch-A) = 62.5°C/W
100
10
Rth(ch-C) = 3.57°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width – s
Data Sheet D18065EJ2V0DS
3
2SK3115B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
12
100
10
ID - Drain Current - A
ID - Drain Current - A
Pulsed
VGS = 10 V
8
8V
6
4
VDS = 10 V
Pulsed
10
1
Tch = 125°C
75°C
25°C
−25°C
0.1
2
0.01
0
0
5
10
15
5
15
25
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V DS = 10 V
ID = 1 mA
4
3
2
0
50
100
10
Tch = −25°C
25°C
1
75°C
125°C
0.1
VDS = 10 V
Pulsed
0.01
0.01
150
Tch - Channel Temperature - °C
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5
Pulsed
3
2
ID = 6.0 A
1
3.0 A
0
0
5
10
15
20
25
RDS(on) - Drain to Source On-state Resistance - Ω
4
Pulsed
1.4
1.3
1.2
1.1
V GS = 10 V
1.0
20 V
0.9
0.8
0.01
0.1
1
VGS – Gate to Source Voltage - V
ID - Drain Current - A
4
20
VGS - Gate to Source Voltage - V
1
-50
RDS(on) - Drain to Source On-state Resistance - Ω
10
VDS - Drain to Source Voltage - V
5
VGS(off) - Gate Cut-off Voltage - V
0
20
Data Sheet D18065EJ2V0DS
10
100
2SK3115B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
3
100
IF – Diode Forward Current - A
ID = 6.0 A
2
3.0 A
1
VGS = 10 V
Pulsed
0
10
VGS = 10 V
1
0V
0.1
Pulsed
0.01
-50
0
50
100
150
0
0.5
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
C iss
1000
C oss
100
C rss
10
VGS = 0 V
f = 1 MHz
1
0.01
0.1
1
1.5
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
VDD = 150 V
VGS = 10 V
RG = 10 Ω
tf
100
td(off)
td(on)
10
tr
1
0.1
100
VDS - Drain to Source Voltage – V
1
10
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
700
1000
di/dt = 50 A/μs
VGS = 0 V
VDS – Drain to Source Voltage - V
trr – Reverse Recovery Time - ns
1
100
10
1
VDD = 450 V
300 V
150 V
600
9
VGS
8
500
7
400
6
5
300
4
3
200
VDS
2
100
1
ID = 6.0 A
0
0.1
1
10
ID - Drain Current - A
VGS – Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
<R>
0
0
5
10
15
20
25
QG – Gate Chage - nC
Data Sheet D18065EJ2V0DS
5
2SK3115B
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100
10
Energy Derating Factor - %
IAS - Single Avalanche Current - A
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
IAS = 6.0 A
EAS = 24 mJ
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 → 0 V
Starting Tch = 25˚C
0.1
10 μ
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 6.0 A
100
80
60
40
20
100 μ
1m
10 m
L - Inductive Load - H
0
75
125
150
25
50
100
Starting Tch - Starting Channel Temperature - °C
EQUIVALENT CIRCUIT
PACKAGE DRAWING (Unit: mm)
Drain (D)
Isolated TO-220 (MP-45F)
4.7±0.2
10.0±0.3
3.2±0.2
2.54±0.2
Body
Diode
1.47 MAX
Source (S)
13.5 MAX.
3.0 TYP.
3.30±0.20
15.87±0.3
Gate (G)
2.76±0.2
0.8±0.2
2.54 TYP.
2.54 TYP.
0.50±0.1
1. Gate
2. Drain
3. Source
1 2 3
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
6
Data Sheet D18065EJ2V0DS
2SK3115B
• The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1