To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 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Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA603T 2.8 ±0.2 FEATURES 0.32 +0.1 –0.05 0.16 +0.1 –0.06 1.5 0.65 +0.1 –0.15 saves mounting costs. 0 to 0.1 • Automatic mounting supported 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 ±0.2 PIN CONNECTION (Top view) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) 100 mA ID(pulse)* 200 mA Total Power Dissipation PT 300 (Total) mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Drain Current (pulse) * PW ≤ 10 ms, Duty Cycle ≤ 50 % Document No. G11249EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA602T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±1.0 µA 1.8 V VGS(off) VDS = 5.0 V, ID = 1.0 µA 0.8 |yfs| VDS = 5.0 V, ID = 10 mA 20 Drain to Source On-State Resistance RDS(on)1 VGS = 4.0 V, ID = 10 mA 19 30 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 10 V, ID = 10 mA 15 25 Ω VDS = 5.0 V, VGS = 0, f = 1.0 MHz 16 pF Gate Cut-off Voltage Forward Transfer Admittance 1.4 mS Input Capacitance Ciss Output Capacitance Coss 12 pF Reverse Transfer Capacitance Crss 3 pF Turn-On Delay Time td(on) 17 ns 10 ns td(off) 68 ns tf 38 ns Rise Time tr Turn-Off Delay Time Fall Time VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, ID = 10 mA, RL = 500 Ω Marking: IA SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED) VGS DUT RL 90 % Gate voltage waveform 0 VGS(on) 10 % VDD 90 % ID RG 90 % PG. ID Drain current waveform VGS 0 10 % td(on) τ τ = 1 µs Duty Cycle ≤ 1 % 2 10 % tr td(off) ton tf toff µPA602T TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 350 PT - Total Power Dissipation - mW Free air dT - Derating Factor - % 100 80 60 40 20 20 0 40 60 80 100 120 140 160 TC - Case Temperature - ˚C 300 250 200 To Pe ta l ro 150 ne un it 100 50 0 25 50 75 100 125 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 120 1 000 Pulsed measurement VDS = 5 V Pulsed measurement 4.0 V ID - Drain Current - mA ID - Drain Current - mA 100 3.5 V 80 60 3.0 V 40 20 0 100 10 TA = 75 ˚C 25 ˚C –25 ˚C 1 VGS = 2.5 V 1 2 3 4 5 6 VDS - Drain to Source Voltage - V 0.1 7 0 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 2 4 6 VGS - Gate to Source Voltage - V VDS = 5 V ID = 1.0 µ A 2 1 0 30 60 90 120 Tch - Channel Temperature - ˚C 8 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 0 –30 150 150 VDS = 5 V TA = 75 ˚C 25 ˚C –25 ˚C 10 1 1 10 100 ID - Drain Current - mA 1 000 3 100 ID = 10 mA Pulsed measurement 50 10 5 1 5 10 50 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 1 RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 000 VGS = 10 V Pulsed measurement 500 100 50 TA = 75 ˚C 25 ˚C –25 ˚C 10 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 20 10 Coss Crss 1 VGS = 0 f = 1 MHz 0 30 60 90 120 Tch - Channel Temperature - ˚C 0.1 0.1 150 100 100 td(off) 50 tf tr td(on) VDD = 5 V VGS = 5 V RG = 10 Ω 20 50 ID - Drain Current - mA 100 ISD - Source to Drain Current - mA td(on), tr, td(off), tf - Switching Time - ns 4 1 10 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 10 1 000 Ciss 10 SWITCHING CHARACTERISTICS 20 500 100 VGS = 10 V Pulsed measurement 0 –30 50 100 ID - Drain Current - mA CAPACITANCE vs. DARIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω µPA602T 10 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Source to Drain Voltage - V 1 µPA602T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 µPA602T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11