μPA2352T1P

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2352T1P
DUAL Nch MOSFET
DESCRIPTION
OUTLINE DRAWING (Unit: mm)
The μ PA2352T1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
TOP VIEW
•
•
•
Monolithic Dual MOSFET
Connecting the Drains on the circuit board is not required
because the Drains of the FET1 and the FET2 are internally
connected.
2.5 V drive available and low on-state resistance
RSS(on)1 = 43.0 mΩ MAX. (VGS = 4.5 V, IS = 2.0 A)
RSS(on)2 = 45.0 mΩ MAX. (VGS = 4.0 V, IS = 2.0 A)
RSS(on)3 = 55.0 mΩ MAX. (VGS = 3.1 V, IS = 2.0 A)
RSS(on)4 = 67.0 mΩ MAX. (VGS = 2.5 V, IS = 2.0 A)
Built-in G-S protection diode against ESD
Pb-free bump
0.65
G2
1.40 ± 0.05
FEATURES
•
BOTTOM VIEW
1.40 ± 0.05
S2
0.65
G1
1-pin index mark S1
S1
Dot area (For in-house)
0.2 ± 0.05
4 - φ 0.3
S1 : Source1
G1 : Gate1
G2 : Gate2
S2 : Source2
ORDERING INFORMATION
PART NUMBER
μ PA2352T1P-E4-A
Note
PACKAGE
4-pin EFLIP-LGA
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
Remark "-E4" indicates the unit orientation (-E4 only).
EQUIVALENT CIRCUIT
FET1
FET2
Gate1
Gate2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Source to Source Voltage (VGS = 0 V)
VSSS
24
Gate to Source Voltage (VSS = 0 V)
VGSS
±12
Note1
Source Current (DC)
±4.0
IS(DC)
Note2
Source Current (pulse)
±40
IS(pulse)
Note1
Total Power Dissipation (2 units)
0.75
PT
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
Notes 1. Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mm
2. PW ≤ 100 μs, Duty Cycle ≤ 1%
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source2
Source1
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19741EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
μ PA2352T1P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Source Current
ISSS
Gate Leakage Current
Gate Cut-off Voltage
Note
Forward Transfer Admittance
Source to Source On-state
Resistance
TEST CONDITIONS
Note
MIN.
TYP.
MAX.
UNIT
10
μA
±10
μA
1.5
V
VSS = 24.0 V, VGS = 0 V, TEST CIRCUIT 1
IGSS
VGS = ±12.0 V, VSS = 0 V, TEST CIRCUIT 2
VGS(off)
VSS = 10.0 V, IS = 1.0 mA, TEST CIRCUIT 3
0.5
| yfs |
VSS = 10.0 V, IS = 2.0 A, TEST CIRCUIT 4
2.5
RSS(on)1
VGS = 4.5 V, IS = 2.0 A, TEST CIRCUIT 5
24.0
35.0
43.0
mΩ
RSS(on)2
VGS = 4.0 V, IS = 2.0 A, TEST CIRCUIT 5
25.0
37.0
45.0
mΩ
RSS(on)3
VGS = 3.1 V, IS = 2.0 A, TEST CIRCUIT 5
31.5
42.0
55.0
mΩ
VGS = 2.5 V, IS = 2.0 A, TEST CIRCUIT 5
33.5
50.0
67.0
mΩ
RSS(on)4
1.0
S
Input Capacitance
Ciss
VSS = 10.0 V, VGS = 0 V, f = 1.0 MHz
330
pF
Output Capacitance
Coss
TEST CIRCUIT 7
80
pF
Reverse Transfer Capacitance
Crss
55
pF
Turn-on Delay Time
td(on)
IS = 4.0 A, VGS = 4.0 V, VDD = 20.0 V,
22
ns
RG = 6.0 Ω, TEST CIRCUIT 8
132
ns
td(off)
183
ns
tf
216
ns
5.7
nC
1.0
V
Rise Time
tr
Turn-off Delay Time
Fall Time
Gate to Source Charge
QG
VG1S1 = 4.0 V, IS = 4.0 A, VDD = 20.0 V,
TEST CIRCUIT 9
Body Diode Forward Voltage
Note
IF = 4.0 A, VGS = 0 V, TEST CIRCUIT 6
VF(S-S)
Note Pulsed
Both the FET1 and the FET2 are measured. Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 ISSS
TEST CIRCUIT 2 IGSS
S2
S2
When FET1 is
G2
measured, between
G2
GATE and SOURCE
A
of FET2 are shorted.
G1
VSS
A
VGS
S1
G1
S1
TEST CIRCUIT 3 VGS(off)
TEST CIRCUIT 4 | yfs |
S2
When FET1 is
S2
ΔIS/ΔVGS
G2
G2
measured, between
A
A
GATE and SOURCE
A
A
of FET2 are shorted.
G1
G1
VSS
VGS
S1
2
VSS
VGS
S1
Data Sheet G19741EJ1V0DS
μ PA2352T1P
TEST CIRCUIT 6 VF(S-S)
When FET1 is measured,
FET2 is added VGS +4.5 V.
TEST CIRCUIT 5 RSS(on)
S2
VSS/IS
G2
S2
4.5 V
IF
G2
IS
VSS
G1
VSS
G1
V
VGS
V
VGS
=0V
S1
S1
TEST CIRCUIT 7
Ciss
Coss
Crss
S2
G2
S2
S2
VSS
Capacitance
Bridge
G1
G2
G2
VSS
VSS
G1
G1
Capacitance
Bridge
Capacitance
Bridge
S1
S1
S1
TEST CIRCUIT 8 td(on), tr, td(off), tf
S2
VGS
G2
VGS
V
Wave Form
RL
0
VGS
10%
90%
VSS
G1
PG.
VGS
0
VSS
RG
Wave Form
VDD
τ
S1
VSS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 9 QG
S2
G2
A
IG = 2 mA
RL
G1
PG.
50 Ω
VDD
S1
Data Sheet G19741EJ1V0DS
3
μ PA2352T1P
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.0
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
Mounted on BT resin board of
40.5 mm x 25 mm x 1.5 mm
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0
175
25
50
75
100
FORWARD BIAS SAFE OPERATING AREA
IS - Source Current - A
IS(pulse)
RSS(on) Limited
(VGS = 4.5 V)
PW = 10 μs
10
100 μs
1 ms
IS(DC)
1
10 ms
0.1
Single Pulse
Mounted on BT resin board of
40.5 mm × 25 mm × 1.5 mm
PD (FET1) : PD (FET2) = 1 : 1
100 ms
DC
0.01
0.1
1
10
100
VSS - Source to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
1000
Single Pulse
PD (FET1) : PD (FET2) = 1 : 1
Mounted on BT resin board of
40.5 mm × 25 mm × 1.5 mm
100
Mounted on ceramic board of
50 cm2 × 1.0 mm
10
1
1m
10 m
100 m
1
10
PW - Pulse Width - s
4
150
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
100
125
Data Sheet G19741EJ1V0DS
100
1000
175
μ PA2352T1P
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
10
30
IS - Source Current - A
IS - Source Current - A
40
VGS = 4.5 V
4.0 V
3.1 V
2.5 V
20
10
TEST CIRCUIT 5
Pulsed
1
TA = 125°C
75°C
25°C
−25°C
0.1
0.01
TEST CIRCUIT 3
V SS = 10.0 V
Pulsed
0.001
0.0001
0
0
1
2
3
4
0
5
0.5
VSS - Source to Source Voltage - V
1
0.8
TEST CIRCUIT 3
VSS = 10.0 V
IS = 1.0 mA
0.4
0
50
100
150
10
TA = −25°C
25°C
75°C
125°C
1
0.1
0.01
0.1
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
40
0
0.01
TEST CIRCUIT 5
Pulsed
0.1
1
IS - Source Current - A
10
10
100
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RSS(on) - Source to Source On-state Resistance - mΩ
RSS(on) - Source to Source On-state Resistance - mΩ
100
20
1
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
60
2.5
TEST CIRCUIT 4
VSS = 10.0 V
Pulsed
Tch - Channel Temperature - °C
80
2
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.2
-50
1.5
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.6
1
100
TEST CIRCUIT 5
IS = 2.0 A
Pulsed
80
60
40
20
0
Data Sheet G19741EJ1V0DS
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
5
μ PA2352T1P
CAPACITANCE vs. SOURCE TO SOURCE
VOLTAGE
1000
100
TEST CIRCUIT 5
IS = 2.0 A
Pulsed
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
80
60
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
20
Ciss
100
Coss
TEST CIRCUIT 7
VGS = 0 V
f = 1.0 MHz
10
0
-50
0
50
100
0.1
150
Tch - Channel Temperature - °C
100
4
TEST CIRCUIT 8
VDD = 20.0 V, VGS = 4.0 V
RG = 6.0 Ω
VSS - Source to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
10
DYNAMIC INPUT CHARACTERISTICS
1000
tr
tf
100
td(off)
td(on)
3
VDD = 5.0 V
12.0 V
20.0 V
2
1
TEST CIRCUIT 9
IS = 4.0 A
0
10
0.1
1
10
100
0
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
100
10
1
0.1
TEST CIRCUIT 6
Pulsed
VGS = 0 V
0.01
0.001
0.0
0.5
1.0
1.5
1
2
3
4
QG - Gate Charge - nC
IS - Source Current - A
IF - Diode Forward Current - A
1
VSS - Source to Source Voltage - V
SWITCHING CHARACTERISTICS
2.0
2.5
VF(S-S) - Source to Source Voltage - V
6
Crss
Data Sheet G19741EJ1V0DS
5
6
μ PA2352T1P
< Example of application circuit >
Lithium-Ion battery (1 cell) protection circuit
Lithium-Ion battery pack
Protection circuit
P+
Battery protection IC
LithiumIon battery
cell
P−
μ PA2350, μ PA2351, μ PA2352
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the
following contents. If used exceeding recommended conditions, there is a possibility of causing the device and
characteristic degradation.
1. This device is very thin device and should be handled with caution for mechanical stress. The distortion applied
to the device should become below 2000 × 10−6. If the distortion exceeds 2000 × 10−6, the characteristic of a
device may be degraded and it may result in failure.
2. Please do not damage the device when you handle it. The use of metallic tweezers has the possibility of giving
the wound. Mounting with the nozzle with clean point is recommended.
3. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result
failure.
4. When you wash the device mounted the board, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
5. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
6. When you coat the device after mounted on the board, please consult our company. NEC Electronics
recommends the epoxy resin of the semiconductor grade as a coating material.
7. Please refer to Figure 2 as an example of the Mounting Pad. Optimize the land pattern in consideration of
density, appearance of solder fillets, common difference, etc in an actual design.
8. The marking side of this device is an internal electrode. Please neither contact with terminals of other parts nor
take out the electrode.
Data Sheet G19741EJ1V0DS
7
μ PA2352T1P
Figure 1
Recommended soldering conditions of INFRARED REFLOW
Maximum temperature (Package's surface temperature)
Time at maximum temperature
Time of temperature higher than 220°C
Preheating time at 160 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (Mass percentage)
: 260°C or below
: 10 s or less
: 60 s or less
: 60 to 120 s
: 3 times
: 0.2% or less
(Main heating)
to 10 s
Package's surface
temperature (°C)
260°C MAX.
220°C
180°C
to 60 s
160°C
60 to 120 s
(Preheating)
Time(s)
Infrared Reflow Temperature Profile
Figure 2
The example of the Mounting Pad
4 - φ 0.30
0.65
0.65
Figure 3
REEL SIDE
The unit orientation
LEADER SIDE
TOP VIEW
8
Data Sheet G19741EJ1V0DS
S2
S2
G2
G2
S1
S1
G1
G1
μ PA2352T1P
• The information in this document is current as of April, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1