uPA1764 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1764
SWITCHING
DUAL N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The µ PA1764 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
8
5
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
FEATURES
• Dual chip type
• Low on-state resistance
RDS(on)1 = 27 mΩ TYP. (VGS = 10 V, I D = 3.5 A)
RDS(on)2 = 32 mΩ TYP. (VGS = 4.5 V, I D = 3.5 A)
RDS(on)3 = 34 mΩ TYP. (VGS = 4.0 V, I D = 3.5 A)
• Low input capacitance
Ciss = 1300 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ±0.3
4
4.4
5.37 MAX.
0.8
0.05 MIN.
0.15
+0.10
–0.05
1.8 MAX.
1.44
1
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1764G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T A = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±7
A
ID(pulse)
±28
A
Total Power Dissipation (1 unit) Note2
PT
1.7
W
Note2
PT
2.0
W
Tch
150
°C
Drain Current (pulse) Note1
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note3
IAS
7
A
Single Avalanche Energy
Note3
EAS
98
mJ
Notes 1.
2.
3.
Remark
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
PW ≤ 10 µs, Duty cycle ≤ 1%
2
TA = 25°C, Mounted on ceramic substrate of 1200 mm x 2.2 mm
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14329EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1999, 2001
µPA1764
ELECTRICAL CHARACTERISTICS (T A = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
| yfs |
VDS = 10 V, ID = 3.5 A
5.0
9.0
RDS(on)1
VGS = 10 V, ID = 3.5 A
27
35
mΩ
RDS(on)2
VGS = 4.5 V, ID = 3.5 A
32
42
mΩ
RDS(on)3
VGS = 4.0 V, ID = 3.5 A
34
46
mΩ
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
1300
pF
Output Capacitance
Coss
VGS = 0 V
230
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
110
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 3.5 A
15
ns
tr
VGS = 10 V
69
ns
td(off)
RG = 10 Ω
65
ns
27
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
29
nC
Gate to Source Charge
QGS
VGS = 10 V
3.6
nC
Gate to Drain Charge
QGD
ID = 7.0 A
7.4
nC
VF(S-D)
IF = 7.0 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 7.0 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
66
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = 20 → 0 V
RG
PG.
VGS
VGS
Wave Form
0
VDD
90%
ID
IAS
ID
VGS
0
ID
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
2
IG = 2 mA
RL
50 Ω
VDD
10%
0 10%
Wave Form
τ
VDD
PG.
90%
BVDSS
VDS
ID
90%
10%
Data Sheet G14329EJ2V0DS
tr td(off)
td(on)
ton
tf
toff
µPA1764
TYPICAL CHARACTERISTICS (T A = 25°C, All terminals are connected.)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20
40
60
80
100 120 140 160
2.8
Mounted on ceramic
substrate 2of
1200 mm × 2.2 mm
2.4
2.0
2 unit
1 unit
1.6
1.2
0.8
0.4
0
TA - Ambient Temperature - ˚C
★
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
d
ite )
Lim 10 V
=
S
RD VGS
ID(DC)
(at
PW
ID - Drain Current - A
)
(on
10
1m
10
=1
00
µs
ms
10
0m
DC
Po
we
1
s
s
rD
iss
ipa
tio
nL
Remark
im
0.01
0.1
ite
d
0.1
Mounted on ceramic substrate of
2
1200 mm × 2.2 mm
TA = 25˚C
Single Pulse
1
10
100
VDS - Drain to Source Voltage - V
rth(t) - Transient Thermal Resistance - ˚C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 73.5˚C/W
10
1.0
0.1
100 µ
Mounted on ceramic
substrate of 1200 mm2 × 2.2 mm
Single pulse, 1 unit TA = 25˚C
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14329EJ2V0DS
3
µPA1764
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
35
Pulsed
VDS = 10 V
Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
30
TA = 150˚C
TA = 75˚C
TA = 25˚C
1
TA = −25˚C
0.1
25
VGS = 10 V
20
15
VGS = 4.5 V
10
VGS = 4.0 V
5
0.01
1
2
3
4
5
0
0
6
0.2
VGS - Gate to Source Voltage - V
10
TA = 25˚C
1
TA = 75˚C
TA = 150˚C
0.1
0.01
0.01
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
4
RDS(on) - Drain to Source On-state Resistance - mΩ
VDS = 10 V
Pulsed
TA = −25˚C
100
Pulsed
80
70
VGS = 4.0 V
50
VGS = 4.5 V
40
30
20
VGS = 10 V
10
0
0.1
1
10
0.8
1.0
1.2
1.4
1.6
80
60
40
ID = 7 A
20
0
0
5
10
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
90
60
0.6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
VGS(off) - Gate to Source Cut-off Voltage - V
|yfs| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
0.4
VDS - Drain to Source Voltage - V
3
VDS = 10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
ID - Drain Current - A
− 50
0
50
100
Tch - Channel Temperature - ˚C
Data Sheet G14329EJ2V0DS
150
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
VGS = 4.0 V
VGS = 4.5 V
VGS = 10 V
60
40
20
0
ID = 3.5 A
− 50
0
50
100
Pulsed
10
VGS = 0 V
VGS = 4.5 V
1
0.1
0.01
150
0
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Coss
Crss
1
100
td(off)
100
tf
td(on)
10
VDS = 30 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
tr
VDS - Drain to Source Voltage - V
1000
trr - Reverse Recovery Time - ns
10
td(on), tr, td(off), tf - Switching Time - ns
Ciss
1
0.1
1.5
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1 MHz
100
1.0
1000
1
10
100
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10000
0.5
VSD - Source to Drain Voltage - V
12
60
50
VDD = 48 V
30 V
12 V
40
10
VGS
8
30
6
20
4
10
0
0
2
VDS
ID = 7 A
8
16
24
32
40
VGS - Gate to Source Voltage - V
80
100
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA1764
0
QG - Gate Charge - nC
ID - Drain Current - A
Data Sheet G14329EJ2V0DS
5
µPA1764
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
120
10
IAS = 7 A
EAS
=9
8m
J
1
0.1
10
RG = 25 Ω
VDD = 30 V
VGS = 20
0V
Starting Tch = 25˚C
100
1m
10 m
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
100
0V
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
6
RG = 25 Ω
VDD = 30 V
VGS = 20
IAS 7 A
Data Sheet G14329EJ2V0DS
µPA1764
[MEMO]
Data Sheet G14329EJ2V0DS
7
µPA1764
• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4